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CEF04N6 Feb. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 600V , 2.5A , RDS(ON)=2.5 @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole D G G D S S TO-220F ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 600 30 2.5 10 2.5 35 0.28 -55 to 150 Unit V V A A A W W/ C C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 6-122 3.6 65 C/W C/W CEF04N6 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Symbol a Condition VDD =50V, L=27mH RG=9.1 Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATING EAS IAS 500 4 mJ A 6 OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS b VGS = 0V,ID = 250A VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VDS = VGS, ID = 250A VGS =10V, ID = 2A VGS = 10V, VDS = 10V VDS = 40V, ID = 2A VDD =300V, ID = 4A, VGS = 10V RGEN=25 600 25 V A 100 nA ON CHARACTERISTICS a Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 2 2.2 4 2.8 25 65 75 65 24 VDS =480V, ID = 4A, VGS =10V 6-123 4 2.5 V A S SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 50 120 150 120 31 ns ns ns ns nC nC nC 4 11 CEF04N6 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter DYNAMIC CHARACTERISTICS b Input Capacitance CISS COSS CRSS a Symbol Condition Min Typ Max Unit 730 85 20 PF PF PF 6 Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage VDS =25V, VGS = 0V f =1.0MHZ DRAIN-SOURCE DIODE CHARACTERISTICS VSD VGS = 0V, Is =2.5A 1.6 V Notes a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 6 VGS=10,9,8,7V 5 10 ID, Drain Current(A) 4 3 2 1 0 0 2 4 6 8 10 12 VGS=6V ID, Drain Current (A) 150 C 1 VGS=5V -55 C 1.VDS=40V 2.Pulse Test 0.1 2 25 C 4 6 8 10 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 6-124 CEF04N6 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1200 1000 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 ID=2A VGS=10V C, Capacitance (pF) 800 600 400 200 0 0 5 Ciss Coss Crss 10 15 20 25 6 -50 0 50 100 150 200 VDS, Drain-to Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.30 1.20 1.10 1.0 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A Figure 4. On-Resistance Variation with Temperature 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=250 A 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 4 Figure 6. Breakdown Voltage Variation with Temperature 20 10 VGS=0V gFS, Transconductance (S) VDS=40V 3 2 Is, Source-drain current (A) 0 1 2 3 4 1 1 0 0.1 0.4 0.6 0.8 1.0 1.2 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 6-125 Figure 8. Body Diode Forward Voltage Variation with Source Current CEF04N6 VGS, Gate to Source Voltage (V) 15 12 9 6 3 0 0 10 20 30 40 Qg, Total Gate Charge (nC) VDS=480V ID=4A ID, Drain Current (A) 10 1 1m 10 m s 10 0 s s 10 10 0 R ( DS ON )L im it 0m s D C 6 10 -1 TC=25 C Tj=150 C Single Pulse 10 1 10 2 10 3 10 0 VDS, Drain-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 PDM t1 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 0.02 0.01 Single Pulse 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 6-126 |
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