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| Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9.1A, RDS(ON) = 15m @VGS = 10V. RDS(ON) = 21m @VGS = 4.5V. 30V, 6.9A, RDS(ON) = 26m @VGS = 10V. RDS(ON) = 35m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 1 S1 2 G1 D1 8 D1 7 CEM3138 5 D2 6 D2 5 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Channel 1 30 Channel 2 30 Units V V A A W C 20 9.1 36.4 2.0 -55 to 150 20 6.9 27.6 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RJA Limit 62.5 Units C/W Details are subject to change without notice . 1 Rev 2. 2006.Nov http://www.cetsemi.com CEM3138 N-Channel(Q1) Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 3A VDS = 15V, ID = 12A, VGS = 5V VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6 14 10 46 16 19.8 6.4 5.8 3 1.2 28 20 92 32 26.3 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Min 30 1 100 -100 1 12 17 15 2110 400 260 3 15 21 Typ Max Units V A Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250A VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250A VGS = 10V, ID = 8.6A VGS = 4.5V, ID = 7.5A VDS = 5V, ID = 8.6A nA nA V m m S pF pF pF 5 VDS = 15V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 CEM3138 N-Channel(Q2) Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1.3A VDS = 15V, ID = 12A, VGS = 5V VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6 15 11 30 16 12.7 3.7 4.1 1.3 1.2 30 25 60 32 16.5 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Min 30 1 100 -100 1 20 27 13 862 464 146 3 26 35 Typ Max Units V A Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250A VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250A VGS = 10V, ID = 6.3A VGS = 4.5V, ID = 5.6A VDS = 5V, ID = 6.3A nA nA V m m S pF pF pF 5 VDS = 15V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 3 CHANNEL 1 50 40 30 20 10 0 0.0 VGS=3.0V VGS=10,6,5,4.5V VGS=4.0V CEM3138 25 20 15 10 5 0 25 C ID, Drain Current (A) ID, Drain Current (A) VGS=3.5V 5 TJ=125 C 0.0 0.5 1.0 1.5 -55 C 2.0 2.5 3.0 0.5 1.0 1.5 2.0 2.5 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics Ciss VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 ID=8.6A VGS=10V 2400 2000 1600 1200 800 400 0 Coss Crss 0 5 10 15 20 25 C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VGS=0V 10 1 VTH, Normalized Gate-Source Threshold Voltage ID=250A 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 4 CHANNEL 2 40 VGS=10,6,4.5V VGS=4.0V CEM3138 25 20 15 10 5 0 25 C ID, Drain Current (A) 30 VGS=3.5V ID, Drain Current (A) 20 5 10 VGS=3.0V VGS=2.5V 0 1 2 3 4 TJ=125 C 0.0 0.5 1.0 1.5 -55 C 2.0 2.5 3.0 0 VDS, Drain-to-Source Voltage (V) Figure 7. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1200 1000 800 600 400 200 0 Crss 0 5 10 15 20 25 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 8. Transfer Characteristics ID=6.3A VGS=10V C, Capacitance (pF) Ciss Coss -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 9. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 10. On-Resistance Variation with Temperature IS, Source-drain current (A) VGS=0V 10 1 VTH, Normalized Gate-Source Threshold Voltage ID=250A 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 11. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 12. Body Diode Forward Voltage Variation with Source Current 5 CHANNEL 1 VGS, Gate to Source Voltage (V) 5 V =15V DS ID=12A 4 3 2 1 0 CEM3138 10 2 RDS(ON)Limit ID, Drain Current (A) 10 1 1ms 10ms 100ms 1s DC 10 0 5 10 -1 0 4 8 12 16 20 10 -2 TA=25 C TJ=150 C Single Pulse -2 10 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 13. Gate Charge VDS, Drain-Source Voltage (V) Figure 14. Maximum Safe Operating Area RDS(ON)Limit CHANNEL 2 VGS, Gate to Source Voltage (V) 5 V =15V DS ID=12A 4 3 2 1 0 10 2 ID, Drain Current (A) 10 1 1ms 10ms 100ms 1s DC 10 0 10 -1 0 4 8 12 16 20 10 -2 TA=25 C TJ=150 C Single Pulse -2 10 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 15. Gate Charge VDS, Drain-Source Voltage (V) Figure 16. Maximum Safe Operating Area 6 CEM3138 VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 17. Switching Test Circuit Figure 18. Switching Waveforms 10 0 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 PDM t1 t2 Single Pulse 1. RcJA (t)=r (t) * RcJA 2. RcJA=See Datasheet 3. TJM-TA = P* RcJA (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 7 |
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