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| SPICE MODELS: DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX143TK DCX114TK DCX (xxxx) K COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SC-74R DUAL SURFACE MOUNT TRANSISTOR Features NEW PRODUCT * * * Epitaxial Planar Die Construction Built-In Biasing Resistors Available in Lead Free/RoHS Compliant Version (Note 3) A SC-74R (Note 4) Dim BC Min 0.35 1.50 2.70 Max 0.50 1.70 3.00 0.95 1.90 Typ 0.38 1.60 2.80 A B C Mechanical Data * * * * * * * * * Case: SC-74R (Note 4) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish annealed over Copper leadframe). Please see Ordering Information, Note 5, on Page 3 Terminal Connections: See Diagram Marking: Date Code and Marking Code (See Diagrams & Page 4) Ordering Information (See Page 3) Weight: 0.015 grams (approximate) P/N DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX143TK DCX114TK R1 22KW 47KW 10KW 2.2KW 10KW 4.7KW 10KW R2 22KW 47KW 47KW 47KW 10KW MARKING C17 C20 C14 C06 C13 C07 C12 R1 R 2 R2 R1 G H K M D G H J K L M a 2.90 1.00 0.35 0.10 0 3.10 1.30 0.55 0.20 8 3.00 0.05 1.10 0.40 0.15 3/4 0.013 0.10 J D L All Dimensions in mm R1 R1 R1, R2 R1 Only SCHEMATIC DIAGRAM Maximum Ratings NPN Section Characteristic Supply Voltage, (3) to (1) Input Voltage, (2) to (1) @ TA = 25C unless otherwise specified Symbol VCC Value 50 -10 to +40 -10 to +40 -6 to +40 -5 to +12 -10 to +40 -5 Vmax -5 Vmax 30 30 70 100 50 100 100 100 300 417 -55 to +150 Unit V DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX143TK DCX114TK DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX143TK DCX114TK All VIN V Output Current IO mA Output Current Power Dissipation (Total) (Note 2) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage and Temperature Range Note: 1. 2. 3. 4. IC (Max) Pd RqJA Tj, TSTG mA mW C/W C Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded. No purposefully added lead. SC-74R and SOT-26 have identical dimensions and the only difference is the location of the pin one indicator. Please see the individual device datasheets for exact details regarding the location of the pin one indicator. DS30350 Rev. 5 - 2 1 of 11 www.diodes.com DCX (xxxx) K a Diodes Incorporated Maximum Ratings PNP Section @ TA = 25C unless otherwise specified Symbol VCC Value 50 +10 to -40 +10 to -40 +6 to -40 +5 to -12 +10 to -40 +5 Vmax +5 Vmax -30 -30 -70 -100 -50 -100 -100 -100 300 833 -55 to +150 Unit V NEW PRODUCT Characteristic Supply Voltage, (3) to (1) Input Voltage, (2) to (1) DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX143TK DCX114TK DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX143TK DCX114TK All VIN V Output Current IO mA Output Current Power Dissipation (Total) (Note 2) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage and Temperature Range Note: IC (Max) Pd RqJA Tj, TSTG mA mW C/W C 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 2. 200mW per element must not be exceeded. Electrical Characteristics NPN Section Characteristic (DDC143TK & DDC114TK only) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Input Resistor (R1) Tolerance Gain-Bandwidth Product* Characteristic DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE DR1 fT @ TA = 25C unless otherwise specified Min 50 50 5 3/4 3/4 3/4 100 -30 3/4 Typ 3/4 3/4 3/4 3/4 3/4 3/4 250 3/4 250 Min 0.5 0.5 0.3 0.5 0.5 3/4 Max 3/4 3/4 -0.5 0.5 0.3 600 +30 3/4 Typ 1.16 1.1 3/4 3/4 1.1 1.65 1.9 --1.9 Unit V V V mA mA V 3/4 % MHz Max 3/4 Unit Test Condition IC = 50mA IC = 1mA IE = 50mA VCB = 50V VEB = 4V IC/IB = 2.5mA / 0.25mA IC/IB = 1mA / 0.1mA 3/4 VCE = 10V, IE = -5mA, f = 100MHz Test Condition DCX143TK DCX114TK IC = 1mA, VCE = 5V Symbol Vl(off) V VCC = 5V, IO = 100mA Input Voltage Vl(on) 3.0 3.0 1.4 1.1 3.0 V VO = 0.3, IO = 5mA VO = 0.3, IO = 2mA VO = 0.3, IO = 1mA VO = 0.3, IO = 5mA VO = 0.3, IO = 10mA IO/Il = 10mA / 0.5mA IO/Il = 10mA / 0.5mA IO/Il = 5mA / 0.25mA IO/Il = 5mA / 0.25mA IO/Il = 10mA / 0.5mA Output Voltage VO(on) 3/4 0.1 0.3 V Input Current Il 3/4 3/4 80 68 68 80 30 -30 -20 3/4 3/4 3/4 3/4 3/4 3/4 250 0.36 0.18 0.88 3.6 0.88 0.5 3/4 mA mA 3/4 VI = 5V Output Current IO(off) VCC = 50V, VI = 0V VO = 5V, IO = 5mA VO = 5V, IO = 5mA VO = 5V, IO = 10mA VO = 5V, IO = 10mA VO = 5V, IO = 5mA 3/4 3/4 VCE = 10V, IE = 5mA, f = 100MHz DC Current Gain Gl DR1 R2/R1 fT Input Resistor (R1) Tolerance Resistance Ratio Tolerance Gain-Bandwidth Product* * Transistor - For Reference Only +30 +20 3/4 % % MHz DS30350 Rev. 5 - 2 2 of 11 www.diodes.com DCX (xxxx) K Electrical Characteristics PNP Section @ TA = 25C unless otherwise specified NEW PRODUCT Characteristic (DCX143TK & DCX114TK only) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Input Resistor (R1) Tolerance Gain-Bandwidth Product* Characteristic DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE DR1 fT Min -50 -50 -5 3/4 3/4 3/4 100 -30 3/4 Typ 3/4 3/4 3/4 3/4 3/4 3/4 250 3/4 250 Min -0.5 -0.5 -0.3 -0.5 -0.5 3/4 Max 3/4 3/4 3/4 -0.5 -0.5 -0.3 600 +30 3/4 Typ -1.16 -1.1 3/4 3/4 -1.1 -1.9 -1.9 3/4 3/4 -1.9 Unit V V V mA mA V 3/4 % MHz Max 3/4 Unit Test Condition IC = -50mA IC = -1mA IE = -50mA VCB = -50V VEB = -4V IC/IB = 2.5mA / 0.25mA IC/IB = 1mA / 0.1mA 3/4 VCE = -10V, IE = 5mA, f = 100MHz Test Condition DCX143TK DCX114TK IC = -1mA, VCE = -5V Symbol Vl(off) V VCC = -5V, IO = -100mA Input Voltage Vl(on) -3.0 -3.0 -1.4 -1.1 -3.0 V VO = -0.3, IO = -5mA VO = -0.3, IO =- 2mA VO = -0.3, IO = -1mA VO = -0.3, IO = -5mA VO = -0.3, IO = -10mA IO/Il = -10mA /-0.5mA IO/Il = -10mA /-0.5mA IO/Il = -5mA /-0.25mA IO/Il = -5mA /-0.25mA IO/Il = -10mA/-0.5mA Output Voltage VO(on) 3/4 -0.1 -0.3 V Input Current Il 3/4 3/4 80 68 68 80 30 -30 -20 3/4 3/4 3/4 3/4 3/4 3/4 250 -0.36 -0.18 -0.88 -3.6 -0.88 -0.5 3/4 mA mA 3/4 VI = -5V Output Current IO(off) VCC = 50V, VI = 0V VO = -5V, IO = -5mA VO = -5V, IO = -5mA VO = -5V, IO = -10mA VO = -5V, IO = -10mA VO = -5V, IO = -5mA 3/4 3/4 VCE = -10V, IE = -5mA, f = 100MHz DC Current Gain Gl DR1 R2/R1 fT Input Resistor (R1) Tolerance Resistance Ratio Tolerance Gain-Bandwidth Product* * Transistor - For Reference Only +30 +20 3/4 % % MHz Ordering Information (Note 5) Device DCX124EK-7 DCX144EK-7 DCX114YK-7 DCX123JK-7 DCX114EK-7 DCX143TK-7 DCX114TK-7 Notes: Packaging SC-74R SC-74R SC-74R SC-74R SC-74R SC-74R SC-74R Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 6. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: DCX114TK-7-F. DS30350 Rev. 5 - 2 3 of 11 www.diodes.com DCX (xxxx) K Marking Information NEW PRODUCT XXX Date Code Key Year Code Month Code Jan 1 2006 T Feb 2 2007 U March 3 Apr 4 XXX = Product Type Marking Code See Sheet 1 Diagrams YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September 2008 V May 5 Jun 6 2009 W Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D TYPICAL CURVES - DCX124EK PNP SECTION 350 PD, POWER DISSIPATION (mW) IC, COLLECTOR CURRENT (A) YM 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 Ib = 0.7mA Ib = 0.6mA Ib = 0.5mA Ib = 0.2mA Ib = 0.1mA Ib = 0.3mA Ib = 0.4mA Ib = 0.8mA Ib = 0.9mA 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 TA , AMBIENT TEMPERATURE (C) Fig. 1 Power Derating Curve 0 0.4 0.8 1.2 1.6 2 VCE , COLLECTOR EMITTER VOLTAGE (V) Fig. 2 VCE vs. IC 350 VCE = -5V TA = 150 C TA = 125 C 300 hFE, DC CURRENT GAIN 250 200 150 100 50 0 0.1 1 10 100 TA = -55 C TA = 85 C TA = 25 C 1000 IC, COLLECTOR CURRENT (mA) Fig. 3 DC Current Gain DS30350 Rev. 5 - 2 4 of 11 www.diodes.com DCX (xxxx) K TYPICAL CURVES - DCX124EK PNP SECTION NEW PRODUCT 1 12 IC/IB = 10 VBE, BASE-EMITTER VOLTAGE (V) TA = 125 C TA = 150 C 11 10 9 8 7 6 5 4 3 2 1 0 VCE = -5V VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) TA = 85 C 0.1 TA = 25 C TA = -55 C TA = -55 C TA = 25 C TA = 85 C 0.01 TA = 125 C TA = 150 C 0.001 0 10 20 30 40 50 IC , COLLECTOR CURRENT (mA) Fig. 4 VCE(SAT) vs IC 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 VBE vs. IC 30 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 15 IC/IB = 10 VCE = -0.3V 27 24 21 18 15 12 9 6 3 0 0.1 TA = -55 C TA = 25 C TA = 85 C TA = 125 C VI(ON), INPUT VOLTAGE (V) 12 9 6 TA = 25 C 3 TA = 150 C TA = -55 C TA = 85 C 0 TA = 150 C TA = 125 C 1 10 100 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) IC, OUTPUT CURRENT (mA) Fig. 7 VI(ON) vs. IC Fig. 6 VBE(SAT) vs. IC TYPICAL CURVES - DCX124EK NPN SECTION 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 TA , AMBIENT TEMPERATURE ( C) Fig. 8 Power Derating Curve DS30350 Rev. 5 - 2 5 of 11 www.diodes.com DCX (xxxx) K NEW PRODUCT TYPICAL CURVES - DCX124EK NPN SECTION 0.1 IC, COLLECTOR CURRENT (A) 400 VCE = 5V 0.09 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VCE, COLLECTOR EMITTER VOLTAGE (V) Ib = 0.3mA Ib = 0.4mA Ib = 0.2mA Ib = 0.1mA Ib = 0.8mA 350 hFE, DC CURRENT GAIN Ib = 0.9mA Ib = 0.6mA Ib = 0.5mA Ib = 0.7mA TA = 150 C TA = 125 C TA = 85 C TA = 25 C 0.08 300 250 200 150 100 50 0 0.1 TA = -55 C 1 10 100 1000 Fig. 9 VCE vs. IC Ic, COLLECTOR CURRENT (mA) Fig. 10 DC Current Gain 1 IC/IB = 10 10 VBE, BASE-EMITTER VOLTAGE (V) 9 8 7 6 5 4 3 2 1 VCE = 5V VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) TA = 125 C TA = 150 C 0.1 TA = 85 C TA = -55 C TA = 25 C TA = -55 C TA = 25 C TA = 85 C TA = 125 C 0.01 0.001 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 11 VCE(SAT) vs. IC TA = 150 C 0 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 12 VBE vs. IC 30 27 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 25 22.5 20 VI(ON), INPUT VOLTAGE (V) VCE = 0.3V 24 21 18 15 12 9 6 3 0 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) TA = -55 C TA = 25 C TA = 85 C TA = 125 C TA = 150 C 17.5 15 12.5 10 7.5 5 2.5 0 0.1 1 10 100 IC, OUTPUT CURRENT (mA) Fig. 14 VI(ON) vs. IC TA = -55 C TA = 125 C TA = 85 C TA = 25 C TA = 150 C Fig. 13 VBE(SAT) vs. IC DS30350 Rev. 5 - 2 6 of 11 www.diodes.com DCX (xxxx) K NEW PRODUCT TYPICAL CURVES - DCX123JK PNP SECTION 250 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1 IC/IB = 10 PD, POWER DISSIPATION (mW) 200 0.1 TA = 75 C TA = -25 C TA = 25 C 150 100 0.01 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE ( C) Fig. 15 Derating Curve 1000 VCE = 10 0.001 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 16 VCE(SAT) vs. IC 4 IE = 0mA TA = 75 C hFE, DC CURRENT GAIN COB, CAPACITANCE (pF) 3 TA = -25 C TA = 25 C 100 2 1 0 10 1 10 IC, COLLECTOR CURRENT (mA) Fig. 17 DC Current Gain TA = 75C TA = 25C VO = 5V 0 100 5 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (V) Fig. 18 Output Capacitance 10 VO = 0.2 100 IC, COLLECTOR CURRENT (mA) 10 1 TA = -25C Vin, INPUT VOLTAGE (V) TA = -25C 1 0.1 TA = 75 C 0.01 TA = 25C 0.001 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (V) Fig. 19 Collector Current Vs. Input Voltage 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 20 Input Voltage vs. Collector Current DS30350 Rev. 5 - 2 7 of 11 www.diodes.com DCX (xxxx) K NEW PRODUCT TYPICAL CURVES - DCX123JK NPN SECTION 250 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1 IC/IB = 10 PD, POWER DISSIPATION (mW) 200 0.1 TA = 75 C TA = -25 C TA = 25 C 150 100 0.01 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE ( C) Fig. 21 Derating Curve 1000 VCE = 10 0.001 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 22 VCE(SAT) vs. IC 4 IE = 0mA TA = 75 C COB, CAPACITANCE (pF) hFE, DC CURRENT GAIN 3 TA = -25 C TA = 25 C 100 2 1 0 10 1 10 IC, COLLECTOR CURRENT (mA) Fig. 23 DC Current Gain TA = 75C TA = 25C VO = 5V 100 0 5 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (V) Fig. 24 Output Capacitance 10 VO = 0.2 100 IC, COLLECTOR CURRENT (mA) 10 1 TA = -25C Vin, INPUT VOLTAGE (V) TA = -25C 1 0.1 TA = 75 C 0.01 TA = 25C 0.001 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (V) Fig. 25 Collector Current Vs. Input Voltage 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 26 Input Voltage vs. Collector Current DS30350 Rev. 5 - 2 8 of 11 www.diodes.com DCX (xxxx) K NEW PRODUCT TYPICAL CURVES - DCX114TK PNP SECTION 250 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1 IC/IB = 10 PD, POWER DISSIPATION (mW) 200 0.1 150 TA = 75 C TA = -25 C TA = 25 C 100 0.01 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE ( C) Fig. 27 Derating Curve 1000 TA = 75 C VCE = 10 0.001 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 28 VCE(SAT) vs. IC 12 IE = 0mA hFE, DC CURRENT GAIN TA = -25 C TA = 25 C COB, CAPACITANCE (pF) 10 8 6 4 2 0 100 10 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 29 DC Current Gain TA = 75C TA = 25C 100 0 5 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (V) Fig. 30 Output Capacitance 10 VO = 0.2 100 IC, COLLECTOR CURRENT (mA) 10 TA = -25C 1 Vin, INPUT VOLTAGE (V) TA = -25C 1 0.1 TA = 75 C 0.01 TA = 25C 0.001 0 1 2 3 4 5 6 7 8 9 10 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 32 Input Voltage vs. Collector Current Vin, INPUT VOLTAGE (V) Fig. 31 Collector Current Vs. Input Voltage DS30350 Rev. 5 - 2 9 of 11 www.diodes.com DCX (xxxx) K NEW PRODUCT 250 TYPICAL CURVES - DCX114TK NPN SECTION 1 IC/IB = 10 PD, POWER DISSIPATION (mW) 200 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.1 150 TA = 75 C TA = -25 C TA = 25 C 100 0.01 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE ( C) Fig. 33 Derating Curve 1000 TA = 75 C VCE = 10 0.001 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 34 VCE(SAT) vs. IC 4 IE = 0mA COB, CAPACITANCE (pF) hFE, DC CURRENT GAIN TA = -25 C TA = 25 C 3 100 2 10 1 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 35 DC Current Gain TA = 75C TA = 25C 0 100 0 5 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (V) Fig. 36 Output Capacitance 10 VO = 0.2 100 IC, COLLECTOR CURRENT (mA) 10 TA = -25C Vin, INPUT VOLTAGE (V) 1 TA = -25C 1 TA = 75 C TA = 25C 0.1 0.01 0.001 0 1 2 3 4 5 6 7 8 9 10 1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 38 Input Voltage vs. Collector Current Vin, INPUT VOLTAGE (V) Fig. 37 Collector Current Vs. Input Voltage DS30350 Rev. 5 - 2 10 of 11 www.diodes.com DCX (xxxx) K IMPORTANT NOTICE NEW PRODUCT Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30350 Rev. 5 - 2 11 of 11 www.diodes.com DCX (xxxx) K |
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