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| SPICE MODEL: DMN2005K DMN2005K NEW PRODUCT NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * * * Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) ESD Protected Gate A SOT-23 Dim B C Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0 Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8 TOP VIEW A B C K M L J E D G H Mechanical Data * * Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking: See Page 4 Ordering & Date Code Information: See Page 4 Weight: 0.008 grams (approximate) D E G D Drain H J Body Diode * * * * * K L M ESD protected Gate Gate Protection Diode * Source EQUIVALENT CIRCUIT All Dimensions in mm Maximum Ratings Drain-Source Voltage @TA = 25C unless otherwise specified Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Pd RJA Tj, TSTG Value 20 10 300 600 350 357 -65 to +150 Unit V V mA mW C/W C Characteristic Gate-Source Voltage Drain Current per element (Note 1) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. 2. 3. 4. Device mounted on FR-4 PCB. No purposefully added lead. Pulse width 10S, Duty Cycle 1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30734 Rev. 3 - 2 1 of 4 www.diodes.com DMN2005K (c) Diodes Incorporated Electrical Characteristics NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance @TA = 25C unless otherwise specified Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 20 10 5 V A A VGS = 0V, ID = 100A VDS = 17V, VGS = 0V VGS = 8V, VDS = 0V VGS(th) RDS (ON) Yfs 0.53 40 0.9 3.5 1.7 V mS VDS = VGS, ID = 100A VGS = 1.8V, ID = 200mA VGS = 2.7V, ID = 200mA VDS = 3V, ID = 10A Notes: 5. Short duration test pulse used to minimize self-heating effect. 2 1.8 1.6 Ta = 25 C o VGS = 2.0V ID, DRAIN CURRENT (A) TA = 150 C 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 1 VGS =1.8V TA = 125 C VGS = 1.6V TA = 85 C TA = 25 C VGS = 1.4V TA = 0 C VGS = 1.2V TA = -55 C VGS = 1.0V 2 3 4 VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage TA = 150 C T A = 125C TA = 85 C TA = -55 C TA = 0 C TA = 25 C TA, AMBIENT TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-State Resistance vs. Drain Current DS30734 Rev. 3 - 2 2 of 4 www.diodes.com DMN2005K (c) Diodes Incorporated NEW PRODUCT ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current TA = 150 C TA = 85C T A = 25C TA = -55 C TA, AMBIENT TEMPERATURE (C) Fig. 7 Static Drain-Source, On-Resistance vs. Ambient Temperature VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage |YfS|, FORWARD TRANSFER ADMITTANCE (S) f=1MHz Ciss C T , CAPACITANCE (pF) Coss Crss ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current DS30734 Rev. 3 - 2 3 of 4 www.diodes.com DMN2005K (c) Diodes Incorporated Ordering Information (Note 6) NEW PRODUCT Device DMN2005K-7 Notes: Packaging SOT-23 Shipping 3000/Tape & Reel 6. For packaging details, please go to our website at http://www.diodes.com/ap02007.pdf. Marking Information DM DM = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year Code Month Code 2006 T Jan 1 Feb 2 2007 U Mar 3 Apr 4 2008 V May 5 Jun 6 YM 2009 W Jul 7 2010 X Aug 8 Sep 9 2011 Y Oct O Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30734 Rev. 3 - 2 4 of 4 www.diodes.com DMN2005K (c) Diodes Incorporated |
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