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TM
HFA1100/883
850MHz Current Feedback Amplifier
Description
The HFA1100/883 is a high speed, wideband, fast settling current feedback amplifier. Built with Intersil' proprietary, complementary bipolar UHF-1 process, it is the fastest monolithic amplifier available from any semiconductor manufacturer. The HFA1100/883's wide bandwidth, fast settling characteristic, and low output impedance, make this amplifier ideal for driving fast A/D converters. Component and composite video systems will also benefit from this amplifier's performance, as indicated by the excellent gain flatness, and 0.03%/0.05 Deg. Differential Gain/ Phase specifications (RL = 75).
July 1994
Features
* This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. * Low Distortion (HD3, 30MHz) . . . . . . . . . . -84dBc (Typ) * Wide -3dB Bandwidth . . . . . . . . . . . . . . . 850MHz (Typ) * Very High Slew Rate . . . . . . . . . . . . . . . 2300V/s (Typ) * Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . 11ns (Typ) * Excellent Gain Flatness (to 50MHz) . . . . . 0.05dB (Typ) * High Output Current . . . . . . . . . . . . . . . . . . 65mA (Typ) * Fast Overdrive Recovery . . . . . . . . . . . . . . <10ns (Typ)
Applications
* Video Switching and Routing * Pulse and Video Amplifiers * Wideband Amplifiers * RF/IF Signal Processing * Flash A/D Driver * Medical Imaging Systems
Ordering Information
PART NUMBER HFA1100MJ/883 TEMPERATURE RANGE -55oC to +125oC PACKAGE 8 Lead CerDIP
Pinout
HFA1100/883 (CERDIP) TOP VIEW
NC -IN +IN V-
1 2 3 4 +
8 7 6 5
NC V+ OUT NC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc. Copyright (c) Intersil Americas Inc. 2002. All Rights Reserved
Spec Number
174
511104-883 FN3615.1
Specifications HFA1100/883
Absolute Maximum Ratings
Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VOutput Current (50% Duty Cycle) . . . . . . . . . . . . . . . . . . . . . . . . 55mA Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . < 2000V Storage Temperature Range . . . . . . . . . . . . . . -65oC TA +150oC Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
Thermal Information
Thermal Resistance JA JC CerDIP Package . . . . . . . . . . . . . . . . . 115oC/W 30oC/W Maximum Package Power Dissipation at +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.87W Package Power Dissipation Derating Factor above +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating V SUPPLY (VS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Operating Temperature Range. . . . . . . . . . . . .-55oC TA +125oC RL 50
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = 5V, AV = +1, R F = 510, R SOURCE = 0, RL = 100, VOUT = 0V, Unless Otherwise Specified. GROUP A SUBGROUPS 1 2, 3 Common Mode Rejection Ratio Power Supply Rejection Ratio CMRR VCM = 2V V+ = 3V, V- = -7V V+ = 7V, V- = -3V VSUPPLY = 1.25V V+ = 6.25V, V- = -5V V+ = 3.75V, V- = -5V VSUPPLY = 1.25V V+ = 5V, V- = -6.25V V+ = 5V, V- = -3.75V VCM = 0V 1 2, 3 1 2, 3 1 2, 3 1 2, 3 CMSIBP VCM = 2V V+ = 3V, V- = -7V V+ = 7V, V- = -3V Note 1 1 2, 3 1 2, 3 Inverting Input (-IN) Current -IN Current Common Mode Sensitivity -IN Current Power Supply Sensitivity IBSN VCM = 0V 1 2, 3 CMSIBN VCM = 2V V+ = 3V, V- = -7V V+ = 7V, V- = -3V VSUPPLY = 1.25V V+ = 6.25V, V- = -5V V+ = 3.75V, V- = -5V VSUPPLY = 1.25V V+ = 5V, V- = -6.25V V+ = 5V, V- = -3.75V AV = -1 RL = 100 AV = -1 RL = 100 VIN = -3.5V VIN = -3V VIN =+3.5V VIN = +3V 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3 LIMITS TEMPERATURE +25oC +125 C, -55 C +25oC +125oC, -55oC
o o
PARAMETERS Input Offset Voltage
SYMBOL VIO
CONDITIONS VCM = 0V
MIN -6 -10 40 38 45 42 45 42 -40 -65 25 20 -50
MAX 6 10 40 65 40 50 50 75 7 10 15 27 15 27 -3 -2.5
UNITS mV mV dB dB dB dB dB dB A A A/V A/V k k A A A/V A/V A/V A/V A/V A/V V V V V
PSRRP
+25oC +125oC, -55oC
PSRRN
+25oC +125oC, -55oC
Non-Inverting Input (+IN) Current +IN Current Common Mode Sensitivity +IN Resistance
IBSP
+25oC +125oC, -55oC
+25 C +125oC, -55oC
o
+RIN
+25oC +125
oC,
-55oC
+25oC +125 C, -55 C +25o +125oC, C
o o
-75 3 2.5 -
-55oC
PPSSIBN
+25oC +125oC, -55oC
NPSS IBN
+25oC +125oC, -55oC
Output Voltage Swing
VOP100
+25oC +125oC, -55oC
VON100
+25 C +125oC, -55oC
o
Spec Number 175
511104-883
Specifications HFA1100/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: VSUPPLY = 5V, AV = +1, R F = 510, R SOURCE = 0, RL = 100, VOUT = 0V, Unless Otherwise Specified. GROUP A SUBGROUPS 1, 2 3 1, 2 3 1, 2 3 -IOUT Note 2 1, 2 3 Quiescent Power Supply Current ICC RL = 100 1 2, 3 IEE RL = 100 1 2, 3 NOTES: 1. Guaranteed from +IN Common Mode Rejection Test, by: +RIN = 1/CMS IBP . 2. Guaranteed from V OUT Test with RL = 50, by: IOUT = VOUT/50. LIMITS TEMPERATURE +25oC, +125oC
o
PARAMETERS Output Voltage Swing
SYMBOL VOP50
CONDITIONS AV = -1 RL = 50 AV = -1 RL = 50 Note 2 VIN = -3V VIN = -2V VIN = +3V VIN = +2V
MIN 2.5 1.5
MAX -2.5 -1.5 -50 -30 26 33 -14 -
UNITS V V V V mA mA mA mA mA mA mA mA
-55 C +25 C, +125 C -55oC +25 C, +125 C -55 C +25oC, +125oC C
o o o o o
VON50
50 30 14 -26
Output Current
+IOUT
-55o
+25 C +125oC, -55oC
o
+25oC +125 C, -55 C
o o
-33
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Table 2 Intentionally Left Blank. See AC Specifications in Table 3
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = 5V, AV = +2, RF = 360, RL = 100, Unless Otherwise Specified. LIMITS PARAMETERS -3dB Bandwidth SYMBOL BW(-1) BW(+1) BW(+2) Gain Flatness GF30 GF50 GF100 CONDITIONS AV = -1, RF = 430 VOUT = 200mVP-P AV = +1, R F = 510 VOUT = 200mVP-P AV = +2, VOUT = 200mVP-P AV = +2, RF = 510, f 30MHz VOUT = 200mVP-P AV = +2, R F = 510, f 50MHz VOUT = 200mVP-P AV = +2, R F = 510, f 100MHz VOUT = 200mVP-P NOTES 1 1 1 1 1 1 TEMPERATURE +25 C +25oC +25oC +25oC +25oC +25oC
o
MIN 300 550 350 -
MAX 0.04 0.10 0.30
UNITS MHz MHz MHz dB dB dB
Spec Number 176
511104-883
Specifications HFA1100/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Characterized at: VSUPPLY = 5V, AV = +2, RF = 360, RL = 100, Unless Otherwise Specified. LIMITS PARAMETERS Slew Rate SYMBOL +SR(+1) -SR(+1) +SR(+2) -SR(+2) Rise and Fall Time TR TF Overshoot +OS -OS Settling Time TS(0.1) TS(0.05) 2nd Harmonic Distortion HD2(30) HD2(50) HD2(100) 3rd Harmonic Distortion HD3(30) HD3(50) HD3(100) NOTES: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot-to-lot and within lot variation. 2. Measured between 10% and 90% points. 3. For 200ps input transition times. Overshoot decreases as input transition times increase, especially for AV = +1. Please refer to Performance Curves. CONDITIONS AV = +1, R F = 510,VOUT = 5VPP
NOTES 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 3 1, 3 1 1 1 1 1 1 1 1
TEMPERATURE +25 C +25oC +25oC +25oC +25 C +25oC +25oC +25oC +25
oC o o
MIN 1200 1100 1650 1500 -
MAX 1 1 25 20 20 33 -48 -45 -35 -65 -60 -40
UNITS V/s V/s V/s V/s ns ns % % ns ns dBc dBc dBc dBc dBc dBc
AV = +1, R F = 510,VOUT = 5VPP
AV = +2, VOUT = 5VP-P AV = +2, VOUT = 5VP-P AV = +2, VOUT = 0.5VP-P AV = +2, VOUT = 0.5VP-P AV = +2, VOUT = 0.5VP-P AV = +2, VOUT = 0.5VP-P AV = +2, RF = 510 VOUT = 2V to 0V, to 0.1% AV = +2, R F = 510 VOUT = 2V to 0V, to 0.05% AV = +2, f = 30MHz, VOUT = 2VPP
+25oC +25oC +25oC +25oC +25oC +25oC +25oC
AV = +2, f = 50MHz, VOUT = 2VPP
AV = +2, f = 100MHz, VOUT = 2VP- P AV = +2, f = 30MHz,VOUT = 2VP-P AV = +2, f = 50MHz, VOUT = 2VPP
AV = +2, f = 100MHz, VOUT = 2VP-P
TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-In) Final Electrical Test Parameters Group A Test Requirements Groups C and D Endpoints NOTE: 1. PDA applies to Subgroup 1 only. SUBGROUPS (SEE TABLE 1) 1 1 (Note 1), 2, 3 1, 2, 3 1
Spec Number 177
511104-883
HFA1100/883 Die Characteristics
DIE DIMENSIONS: 63 x 44 x 19 mils 1 mils 1600m x 1130m x 483m 25.4m METALLIZATION: Type: Metal 1: AICu(2%)/TiW Thickness: Metal 1: 8kA 0.4kA GLASSIVATION: Type: Nitride Thickness: 4kA 0.5kA WORST CASE CURRENT DENSITY: 2.0 x 105 A/cm2 at 47.5mA TRANSISTOR COUNT: 52 SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-) Type: Metal 2: AICu(2%) Thickness: Metal 2: 16kA 0.8kA
Metallization Mask Layout
HFA1100/883
+IN
-IN
V-
VL
BAL
BAL
VH
V+
OUT
Spec Number 178
511104-883
HFA1100/883 Test Circuit
(Applies to Table 1)
V+ ICC VIN K1 NC K2 = POSITION 1: 0.1 VX VIO = 100 VX X100 K2 K2 = POSITION 2: -I BIAS = VX 50K 200pF 100K (0.01%) + 470pF
2 1
+
10
0.1
510 510 7 2 510 3+ 510 4 K3 100 100 DUT 6 1K VOUT
0.1 0.1
0.1 100
+IBIAS =
VZ 100K VZ
+
10
0.1
+ HA-5177
0.1
IEE
NOTE: 1. All Resistors = 1% () 2. All Capacitors = 10% (F)
V-
3. Unless Otherwise Noted 4. Chip Components Recommended
Test Waveforms
SIMPLIFIED TEST CIRCUIT FOR LARGE AND SMALL SIGNAL PULSE RESPONSE (Applies to Table 3) AV = +1 TEST CIRCUIT
V+ VOUT 50 2 50
AV = +2 TEST CIRCUIT
V+ VOUT RF 50 360 RG 360 2 50
VIN RS 50 RF
+ -
VIN RS 50
+ -
510 VV-
NOTE: 1. VS = 5V, AV = +1 2. RS = 50 3. RL = 100 For Small and Large Signals
NOTE: 1. VS = 5V, AV = +2 2. RS = 50 3. RL=100 For Small and Large Signals
LARGE SIGNAL WAVEFORM
VOUT +2.5V 90% 90% +2.5V VOUT +250mV
SMALL SIGNAL WAVEFORM
90%
90%
+250mV
+SR -2.5V 10% 10%
-SR -2.5V
TR , +OS -250mV 10% 10%
TF , -OS -250mV
Spec Number 179
511104-883
HFA1100/883 Burn-In Circuit
HFA1100MJ/883 CERAMIC DIP
R3
R2 R1 D4 VD2 C2
1 2 3 4 +
8 7 6 5
D3 V+ C1 D1
NOTES: 1. R1 = R2 = 1k, 5% (Per Socket) 2. R3 = 10k, 5% (Per Socket) 3. C1 = C2 = 0.01F (Per Socket) or 0.1F (Per Row) Minimum 4. D1 = D2 = 1N4002 or Equivalent (Per Board) 5. D3 = D4 = 1N4002 or Equivalent (Per Socket) 6. V+ = +5.5V 0.5V 7. V- = -5.5V 0.5V
Spec Number 180
511104-883
HFA1100/883 Packaging
c1 -A-DBASE METAL E b1 M -Bbbb S BASE PLANE SEATING PLANE S1 b2 b ccc M C A-B S AA C A-B S D Q -CA L DS M (b) SECTION A-A (c) LEAD FINISH
F8.3A
MIL-STD-1835 GDIP1-T8 (D-4, CONFIGURATION A) 8 LEAD DUAL-IN-LINE FRIT-SEAL CERAMIC PACKAGE INCHES SYMBOL A b b1 b2 b3 c c1 MIN 0.014 0.014 0.045 0.023 0.008 0.008 0.220 MAX 0.200 0.026 0.023 0.065 0.045 0.018 0.015 0.405 0.310 MILLIMETERS MIN 0.36 0.36 1.14 0.58 0.20 0.20 5.59 MAX 5.08 0.66 0.58 1.65 1.14 0.46 0.38 10.29 7.87 2.54 BSC 7.62 BSC 3.81 BSC 3.18 0.38 0.13 0.13 90o 8 5.08 1.52 105o 0.38 0.76 0.25 0.038 NOTES 2 3 4 2 3 5 5 6 7 2 8
eA
D E e eA eA/2 L Q S1 S2
0.100 BSC 0.300 BSC 0.150 BSC 0.125 0.015 0.005 0.005 90o 8 0.200 0.060 105o 0.015 0.030 0.010 0.0015
e
DS
eA/2
c
aaa M C A - B S D S
NOTES: 1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer's identification shall not be used as a pin one identification mark. 2. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied. 3. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. 4. Corner leads (1, N, N/2, and N/2+1) may be configured with a partial lead paddle. For this configuration dimension b3 replaces dimension b1. 5. This dimension allows for off-center lid, meniscus, and glass overrun. 6. Dimension Q shall be measured from the seating plane to the base plane. 7. Measure dimension S1 at all four corners. 8. N is the maximum number of terminal positions. 9. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 10. Controlling Dimension: Inch. 11. Lead Finish: Type A. 12. Materials: Compliant to MIL-I-38535.
aaa bbb ccc M N
Spec Number 181
511104-883
TM
HFA1100
Ultra High Speed Current Feedback Amplifier
DESIGN INFORMATION
February 2002
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
Typical Performance Curves VSUPPLY = 5V, RF = 510, RL = 100, TA = +25C, Unless Otherwise Specified
SMALL SIGNAL PULSE RESPONSE (AV = +2)
120 90 OUTPUT VOLTAGE (mV) OUTPUT VOLTAGE (V) 60 30 0 -30 -60 -90 -120 5ns/DIV 5ns/DIV
LARGE SIGNAL PULSE RESPONSE (AV = +2)
1.2 0.9 0.6 0.3 0 -0.3 -0.6 -0.9 -1.2
NON-INVERTING FREQUENCY RESPONSE (V OUT = 200mVP-P)
GAIN
INVERTING FREQUENCY RESPONSE (V OUT = 200mVP-P)
0 GAIN AV = -1 AV = -5 AV = -10 -9 -12 PHASE 180 AV = -1 AV = -5 AV = -10 AV = -20 90 0 -90 -180 1K AV = -20 PHASE (DEGREES)
0 -3 GAIN (dB) NORMALIZED -6 -9 -12
AV = +1 GAIN (dB) NORMALIZED PHASE (DEGREES) AV = +2 AV = +6 AV = +11 PHASE
-3 -6
0 AV = +1 AV = +2 AV = +6 AV = +11 -90
-180 -270 -360 1K 0.3 1
0.3
1
10 100 FREQUENCY (MHz)
10 100 FREQUENCY (MHz)
Spec Number 182
511104-883
HFA1100
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
Typical Performance Curves VSUPPLY = 5V, RF = 510, RL = 100, TA = +25C, Unless Otherwise Specified
FREQUENCY RESPONSE FOR VARIOUS LOAD RESISTORS (AV = +1, VOUT = 200mV P-P)
+6 +3 0 GAIN (dB) -3 -6 PHASE GAIN RL = 100 RL = 50 RL = 50 RL = 100 PHASE (DEGREES) RL = 1k GAIN (dB) NORMALIZED +3 0 -3 -6 PHASE RL = 50 RL = 100 RL = 100 RL = 50 0 -90 RL = 1k -180 RL = 100 RL = 1k 0.3 1 10 100 FREQUENCY (MHz) 1K -270 -360 GAIN PHASE (DEGREES) RL = 1k
FREQUENCY RESPONSE FOR VARIOUS LOAD RESISTORS (AV = +2, VOUT = 200mV P-P)
0 -90
RL = 1k RL = 100 RL = 1k 0.3 1 10 100 FREQUENCY (MHz) 1K
-180 -270 -360
FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES (AV = +1)
+20
FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES (AV = +2)
+20 GAIN (dB) NORMALIZED +10 0 -10 -20 -30 0.32VP-P 1.00VP-P 1.84VP-P 3.26VP-P
+10 0 GAIN (dB) -10 -20 -30 0.160VP-P 0.500VP-P 0.920VP-P 1.63VP-P
0.3
1
10 100 FREQUENCY (MHz)
1K
0.3
1
10 100 FREQUENCY (MHz)
1K
FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES (AV = +6)
+20 GAIN (dB) NORMALIZED +10 0 -10 -20 -30 0.96 VP-P
TO
-3dB BANDWIDTH vs TEMPERATURE (A V = +1)
950 BANDWIDTH (MHz) 900 850 800 750 700
3.89 VP-P
0.3
1
10 FREQUENCY (MHz)
100
1K
-50
-25
0 +25 +50 +75 +100 +125 TEMPERATURE (oC)
Spec Number 183
511104-883
HFA1100
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
Typical Performance Curves VSUPPLY = 5V, RF = 510, RL = 100, TA = +25C, Unless Otherwise Specified
GAIN FLATNESS (AV = +2)
+2.0 +1.5 DEVIATION (DEGREES) 0 GAIN (dB) -0.05 -0.10 -0.15 -0.20 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 0 15 30 45 60 75 90 105 120 FREQUENCY (MHz) 135 150
DEVIATION FROM LINEAR PHASE (AV = +2)
1
10 FREQUENCY (MHz)
100
SETTLING RESPONSE (AV = +2, VOUT = 2V)
3RD ORDER INTERMODULATION INTERCEPT (2-TONE)
40 35 30 25 20 15 10 5 0 0 100
0.6 SETTLING ERROR (%) 0.4 0.2 0 -0.2 -0.4 -0.6
INTERCEPT POINT (dBm)
-4
1
6
11
16 21 26 TIME (ns)
31
36
41
46
200 300 FREQUENCY (MHz)
400
2nd HARMONIC DISTORTION vs POUT
-30 -35 -40 DISTORTION (dBc) DISTORTION (dBc) 100MHz -45 -50 -55 -60 -65 -70 -5 -3 -1 3 1 5 7 9 OUTPUT POWER (dBm) 11 13 15 30MHz 50MHz -30 -40 -50
3rd HARMONIC DISTORTION vs POUT
100MHz -60 -70 -80 -90 -100 -110 -5 -3 -1 1 3 5 7 9 11 13 15 OUTPUT POWER (dBm) 50MHz
30MHz
Spec Number 184
511104-883
HFA1100
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
Typical Performance Curves VSUPPLY = 5V, RF = 510, RL = 100, TA = +25C, Unless Otherwise Specified
OVERSHOOT vs INPUT RISE TIME (AV = +1)
38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 35 30 VOUT = 1VP-P OVERSHOOT (%) 25 RF = 360 20 VOUT = 0.5VP-P 15 10 5 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 INPUT RISE TIME(ps) RF =510 VOUT = 1VP-P RF = 510 VOUT = 0.5V P-P RF = 510 VOUT = 2VP-P RF = 360 VOUT = 1VP-P
OVERSHOOT vs INPUT RISE TIME (AV = +2)
RF = 360 VOUT = 2VP-P
OVERSHOOT (%)
VOUT = 0.5VP-P
VOUT = 2VP-P
INPUT RISE TIME(ps)
OVERSHOOT vs FEEDBACK RESISTOR (A V = +2, tR = 200ps, VOUT = 2VP-P)
36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 360 400 440 480 520 560 600 640 680 FEEDBACK RESISTOR () 25 24 SUPPLY CURRENT (mA) 23 22 21 20 19 18 -60
SUPPLY CURRENT vs TEMPERATURE
OVERSHOOT (%)
-40
-20
0
20
40
60
80
100
120
TEMPERATURE (oC)
SUPPLY CURRENT vs SUPPLY VOLTAGE
22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 5 6 7 8 9 TOTAL SUPPLY VOLTAGE (V+ - V-, V) 10 2.8 2.7 2.6 2.5 2.4 2.3 2.2 2.1 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3
VIO AND BIAS CURRENTS vs TEMPERATURE
45 42 39 36 33 30 27 24 21 18 15 12 9 6 3 0
INPUT OFFSET VOLTAGE (mV)
SUPPLY CURRENT (mA)
+I BIAS
VIO
-I BIAS
-60
-40
-20
0 20 40 60 80 TEMPERATURE (oC)
100 120
Spec Number 185
511104-883
BIAS CURRENTS (A)
HFA1100
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
Typical Performance Curves VSUPPLY = 5V, RF = 510, RL = 100, TA = +25C, Unless Otherwise Specified
OUTPUT VOLTAGE vs TEMPERATURE (AV = -1, RL = 50)
3.7 3.6 OUTPUT VOLTAGE (V) 3.5 3.4 3.3 3.2 3.1 3 2.9 2.8 2.7 2.6 2.5 -60 -40 -20 0 20 40 60 80 100 120 TEMPERATURE (o C) 0 100 1K 10K FREQUENCY (Hz) | - VOUT | NOISE VOLTAGE (nV/HZ) +VOUT 30 25 20 15 10 5 300 275 250 225 200 175 150 125 100 75 ENI eni INIiniINI+ ini+ 100K 50 25 0 NOISE CURRENT (pA/HZ)
INPUT NOISE vs FREQUENCY
Application Information
Optimum Feedback Resistor The enclosed plots of inverting and non-inverting frequency response illustrate the performance of the HFA1100 in various gains. Although the bandwidth dependency on closed loop gain isn't as severe as that of a voltage feedback amplifier, there can be an appreciable decrease in bandwidth at higher gains. This decrease may be minimized by taking advantage of the current feedback amplifier's unique relationship between bandwidth and R F . All current feedback amplifiers require a feedback resistor, even for unity gain applications, and RF , in conjunction with the internal compensation capacitor, sets the dominant pole of the frequency response. Thus, the amplifier's bandwidth is inversely proportional to RF . The HFA1100 design is optimized for a 510 RF at a gain of +1. Decreasing RF in a unity gain application decreases stability, resulting in excessive peaking and overshoot. At higher gains the amplifier is more stable, so RF can be decreased in a trade-off of stability for bandwidth. The table below lists recommended R F values for various gains, and the expected bandwidth.
GAIN (ACL ) -1 +1 +2 +5 +10 +19
RF () 430 510 360 150 180 270
BANDWIDTH (MHz) 580 850 670 520 240 125
PC Board Layout
The frequency response of this amplifier depends greatly on the amount of care taken in designing the PC board. The use of low inductance components such as chip resistors and chip capacitors is strongly recommended, while a solid ground plane is a must! Attention should be given to decoupling the power supplies. A large value (10F) tantalum in parallel with a small value (0.1F) chip capacitor works well in most cases.
Spec Number 186
511104-883
HFA1100
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
Terminated microstrip signal lines are recommended at the input and output of the device. Capacitance directly on the output must be minimized, or isolated as discussed in the next section. Care must also be taken to minimize the capacitance to ground seen by the amplifier's inverting input (-IN). The larger this capacitance, the worse the gain peaking, resulting in pulse overshoot and possible instability. To this end, it is recommended that the ground plane be removed under traces connected to -IN, and connections to -IN should be kept as short as possible. An example of a good high frequency layout is the Evaluation Board shown in Figure 2.
Evaluation Board
The performance of the HFA1100 may be evaluated using the HFA11XX Evaluation Board. The layout and schematic of the board are shown in Figure 2. To order evaluation boards, please contact your local sales office.
TOP LAYOUT
VH
Driving Capacitive Loads
Capacitive loads, such as an A/D input, or an improperly terminated transmission line will degrade the amplifier's phase margin resulting in frequency response peaking and possible oscillations. In most cases, the oscillation can be avoided by placing a resistor (RS) in series with the output prior to the capacitance. Figure 1 details starting points for the selection of this resistor. The points on the curve indicate the RS and C L combinations for the optimum bandwidth, stability, and settling time, but experimental fine tuning is recommended. Picking a point above or to the right of the curve yields an overdamped response, while points below or left of the curve indicate areas of underdamped performance. R S and C L form a low pass network at the output, thus limiting system bandwidth well below the amplifier bandwidth of 850MHz. By decreasing R S as CLincreases (as illustrated in the curves), the maximum bandwidth is obtained without sacrificing stability. Even so, bandwidth does decrease as you move to the right along the curve. For example, at AV = +1, R S = 50, C L = 30pF, the overall bandwidth is limited to 300MHz, and bandwidth drops to 100MHz at A V = +1, R S = 5, C L = 340pF.
50 45 40 35 RS () 30 25 20 15 10 5 A = +2 V 0 0 40 80 120 160 200 240 280 320 360 400 IN 0.1F -5V 50 AV = +1 500 R1 1 2 3 4 10F LOAD CAPACITANCE (pF) +IN
1
OUT VL V-
V+
GND
BOTTOM LAYOUT
500 VH 8 7 50 6 5 GND GND OUT VL 0.1F 10F +5V
FIGURE 1. RECOMMENDED SERIES OUTPUT RESISTOR vs LOAD CAPACITANCE
FIGURE 2. EVALUATION BOARD SCHEMATIC AND LAYOUT
Spec Number 187
511104-883
HFA1100
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied. TYPICAL PERFORMANCE CHARACTERISTICS Device Characterized at: V SUPPLY = 5V, R F = 360, AV = +2V/V, RL = 100, Unless Otherwise Specified PARAMETERS Input Offset Voltage * Average Offset Voltage Drift VIO CMRR VIO PSRR +Input Current * Average +Input Current Drift - Input Current * Average -Input Current Drift +Input Resistance - Input Resistance Input Capacitance Input Noise Voltage * +Input Noise Current * -Input Noise Current * Input Common Mode Range Open Loop Transimpedance Output Voltage AV = -1 AV = -1, RL = 100 AV = -1, RL = 100 Output Current * AV = -1, RL = 50 AV = -1, RL = 50 DC Closed Loop Output Resistance Quiescent Supply Current * -3dB Bandwidth * RL = Open AV = -1, RF = 430, VOUT = 200mVP-P AV = +1, RF = 510, VOUT = 200mVPP o
CONDITIONS VCM = 0V Versus Temperature VCM = 2V VS = 1.25V VCM = 0V Versus Temperature VCM = 0V Versus Temperature VCM = 2V
TEMPERATURE +25 C Full +25oC +25 C +25oC Full +25oC Full +25oC +25 C +25oC
o o o
TYPICAL 2 10 46 50 25 40 12 40 50 16 2.2 4 18 21 3.0 500 3.3 3.0
UNITS mV V/oC dB dB A nA/oC A nA/oC k pF nV/Hz pA/Hz pA/Hz V k V V mA mA mA MHz MHz MHz V/s V/s MHz dB dB dB Degrees
f = 100kHz f = 100kHz f = 100kHz
+25oC +25 C +25oC Full +25 C +25oC Full +25 C to +125 C -55oC to 0oC
o o o
65 50 0.1 24 580 850 670 1500 2300 220 0.014 0.05 0.14 0.6
+25oC Full +25oC +25 C +25oC +25oC +25oC +25 C +25oC +25oC +25 C +25oC
o o o
AV = +2, RF = 360, VOUT = 200mVPP
Slew Rate
AV = +1, RF = 510, VOUT = 5V P-P AV = +2, VOUT = 5V P-P
Full Power Bandwidth Gain Flatness *
VOUT = 5VP-P To 30MHz, RF = 510 To 50MHz, RF = 510 To 100MHz, R F = 510
Linear Phase Deviation *
To 100MHz, R F = 510
Spec Number 188
511104-883
HFA1100
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied. TYPICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = 5V, RF = 360, AV = +2V/V, RL = 100, Unless Otherwise Specified PARAMETERS 2nd Harmonic Distortion * CONDITIONS 30MHz, VOUT = 2VP-P 50MHz, VOUT = 2VP-P 100MHz, VOUT = 2V P-P 3rd Harmonic Distortion * 30MHz, VOUT = 2VP-P 50MHz, VOUT = 2VP-P 100MHz, VOUT = 2V P-P 3rd Order Intercept * 1dB Compression Reverse Isolation (S12) 100MHz, RF = 510 100MHz, RF = 510 40MHz, RF = 510 100MHz, RF = 510 600MHz, RF = 510 Rise & Fall Time VOUT = 0.5VP-P VOUT = 2VP-P Overshoot * Settling Time * VOUT = 0.5VP-P, Input tR/tF = 550ps To 0.1%, VOUT = 2V to 0V, R F = 510 To 0.05%, VOUT = 2V to 0V, RF = 510 To 0.02%, VOUT = 2V to 0V, RF = 510 Differential Gain Differential Phase Overdrive Recovery Time AV = +2, R L = 75, NTSC AV = +2, R L = 75, NTSC RF = 510, VIN = 5V P-P TEMPERATURE +25 C +25 C +25oC +25 C +25 C +25oC +25oC +25 C +25oC +25oC +25 C +25oC +25oC +25 C +25oC +25
oC o o o o o o o
TYPICAL -55 -49 -44 -84 -70 -57 30 20 -70 -60 -32 500 800 11 11 19 34 0.03 0.05 7.5
UNITS dBc dBc dBc dBc dBc dBc dBm dBm dB dB dB ps ps % ns ns ns % Degrees ns
+25oC +25oC +25 C +25oC
o
* See Typical Performance Curves for more information.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Spec Number 189
511104-883

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