|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Features http://onsemi.com * Reverse Biased SOA with Inductive Loads @ TC = 100_C * Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C * 700 V Blocking Capability * SOA and Switching Applications Information * Pb-Free Package is Available* MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Base Current Symbol VCEO(sus) VCEV IC VEBO ICM IB IBM IE IEM PD PD Value 400 700 9 Unit Vdc Vdc Vdc Adc Adc Adc tc @ 1 A, 100_C is 290 ns (Typ) 1.5 AMPERES NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS III I II III I I IIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII II II II I IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII II I II III I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII II I II II II IIIIIIIIIIIIIIIIIII II I I I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIII III I II II IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II III I I III I I IIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIII - Continuous - Peak (Note 1) - Continuous - Peak (Note 1) 1.5 3 0.75 1.5 2.25 4.5 1.4 11.2 40 320 Emitter Current - Continuous - Peak (Note 1) Total Power Dissipation @ TA = 25_C Derate above 25_C W mW/_C W mW/_C _C Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range TJ, Tstg -65 to +150 TO-225 CASE 77 STYLE 3 3 21 MARKING DIAGRAM 1 BASE 2 COLLECTOR 3 EMITTER YWW JE 13003G THERMAL CHARACTERISTICS Characteristic Symbol RqJC RqJA TL Max Unit Thermal Resistance, Junction-to-Case 3.12 89 _C/W _C/W _C Thermal Resistance, Junction-to-Ambient Maximum Load Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds 275 Y WW JE13003 G = Year = Work Week = Device Code = Pb-Free Package Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. ORDERING INFORMATION Device MJE13003 MJE13003G Package TO-225 TO-225 (Pb-Free) Shipping 500 Units/Box 500 Units/Box *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 1 January, 2006 - Rev. 2 Publication Order Number: MJE13003/D IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I II III II I I I I III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIII IIIIIIIIIIIIII I III II IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I IIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II III I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III IIIIIIII IIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII II IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I III I I II I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I III III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I III III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2. Pulse Test: PW = 300 ms, Duty Cycle v 2%. SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 2) SECOND BREAKDOWN OFF CHARACTERISTICS (Note 2) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Fall Time Crossover Time Storage Time Inductive Load, Clamped (Table 1, Figure 13) Fall Time Storage Time Rise Time Delay Time Resistive Load (Table 1) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Current-Gain - Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, f = 1 MHz) Base-Emitter Saturation Voltage (IC = 0.5 Adc, IB = 0.1 Adc) (IC = 1 Adc, IB = 0.25 Adc) (IC = 1 Adc, IB = 0.25 Adc, TC = 100_C) Collector-Emitter Saturation Voltage (IC = 0.5 Adc, IB = 0.1 Adc) (IC = 1 Adc, IB = 0.25 Adc) (IC = 1.5 Adc, IB = 0.5 Adc) (IC = 1 Adc, IB = 0.25 Adc, TC = 100_C) DC Current Gain (IC = 0.5 Adc, VCE = 2 Vdc) (IC = 1 Adc, VCE = 2 Vdc) Clamped Inductive SOA with base reverse biased Second Breakdown Collector Current with bass forward biased Emitter Cutoff Current (VEB = 9 Vdc, IC = 0) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) Collector-Emitter Sustaining Voltage (IC = 10 mA, IB = 0) (IC = 1 A, Vclamp = 300 Vdc, IB1 = 0.2 A, VBE(off) = 5 Vdc, TC = 100_C) (VCC = 125 Vdc, IC = 1 A, IB1 = IB2 = 0.2 A, tp = 25 ms, Duty Cycle v 1%) Characteristic http://onsemi.com MJE13003 2 VCEO(sus) Symbol RBSOA VCE(sat) VBE(sat) IEBO ICEV Cob hFE IS/b tsv fT td tfi tr tf tc ts Min 400 - - - - - - - - 4 - - - - - - - 8 5 - - - See Figure 12 See Figure 11 0.15 0.29 0.05 Typ 0.4 0.5 21 10 2 - - - - - - - - - - - - - 1.7IIII ms 4 0.75 Max 1 1.2 1.1 0.7 0.1 0.5 1 3 1 40 25 4 1 - - 1 1 5 - - mAdc mAdc MHz Unit Vdc Vdc Vdc pF ms ms ms ms ms ms - - - MJE13003 80 60 hFE , DC CURRENT GAIN 40 30 20 -55 C 10 8 6 4 0.02 0.03 VCE = 2 V VCE = 5 V 0.05 0.07 0.1 0.2 0.3 0.5 0.7 IC, COLLECTOR CURRENT (AMP) 1 2 25C TJ = 150C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2 TJ = 25C 1.6 1.2 IC = 0.1 A 0.3 A 0.5 A 1A 1.5 A 0.8 0.4 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 IB, BASE CURRENT (AMP) 0.5 1 2 Figure 1. DC Current Gain Figure 2. Collector Saturation Region 1.4 1.2 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 3 VBE(on) @ VCE = 2 V V, VOLTAGE (VOLTS) 0.35 0.3 0.25 0.2 0.15 0.1 150C 0.05 0.5 0.7 1 2 0 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 25C IC/IB = 3 TJ = -55C 1 TJ = -55C 25C 25C 0.8 0.6 0.4 0.02 0.03 150C 0.05 0.07 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 3. Base-Emitter Voltage Figure 4. Collector-Emitter Saturation Region 104 VCE = 250 V IC, COLLECTOR CURRENT ( A) C, CAPACITANCE (pF) 103 TJ = 150C 102 101 100 25C 10-1 -0.4 REVERSE FORWARD -0.2 0 +0.2 +0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) +0.6 125C 100C 75C 50C 500 300 200 100 70 50 30 20 10 7 5 0.1 0.2 Cob 0.5 1 2 5 10 20 50 100 200 500 1000 VR, REVERSE VOLTAGE (VOLTS) Cib TJ = 25C Figure 5. Collector Cutoff Region Figure 6. Capacitance http://onsemi.com 3 MJE13003 Table 1. Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING +5 V 1N4933 0.001 mF 5V PW DUTY CYCLE 10% tr, tf 10 ns 68 1 +5 Vk 1N4933 0.02 mF NOTE PW and VCC Adjusted for Desired IC RB Adjusted for Desired IB1 CIRCUIT VALUES 270 1 k 2N2905 47 100 1/2 W 1k 33 MJE210 VCC +125 V L MR826* Vclamp *SELECTED FOR 1 kV 5.1 k VCE 51 TUT RB D1 SCOPE RC TEST CIRCUITS 33 1N4933 2N222 2 RB IB T.U.T. MJE200 - VBE(off) VCC = 20 V Vclamp = 300 Vdc IC -4.0 V Coil Data: Ferroxcube Core #6656 Full Bobbin (~200 Turns) #20 GAP for 30 mH/2 A Lcoil = 50 mH OUTPUT WAVEFORMS VCC = 125 V RC = 125 W D1 = 1N5820 or Equiv. RB = 47 W +10.3 V 25 ms TEST WAVEFORMS IC IC(pk) tf CLAMPED t1 Adjusted to Obtain IC t t1 tf t1 t2 Lcoil (IC pk) VCE VCC Lcoil (IC pk) Test Equipment Scope-Tektronics 475 or Equivalent 0 - 8.5 V tr, tf < 10 ns Duty Cycle = 1.0% RB and RC adjusted for desired IB and IC VCE or Vclamp TIME t2 t Vclamp http://onsemi.com 4 MJE13003 ICPK 90% Vclamp IC tsv trv tc VCE IB 90% IB1 10% Vclamp 10% ICPK 2% IC Table 2. Typical Inductive Switching Performance 90% IC tfi tti TIME Figure 7. Inductive Switching Measurements NOTE: All Data Recorded in the Inductive Switching Circuit in Table 1 SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10-90% Vclamp tfi = Current Fall Time, 90-10% IC tti = Current Tail, 10-2% IC tc = Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222: PSWT = 1/2 VCCIC(tc)f In general, t rv + t fi ] t c. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25_C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C. http://onsemi.com 5 IIIII II III IIII III IIIIIIIIIIIIIIII IIIIIIIIIIIIIII III I I I I I IIII II II IIIIIIIIIIIIIIII IIIIIIIIIIIIIII I IIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIII II I IIIIIIIIIIII I II I II IIIIIIIIIIIIIIII IIIIIIIIIIIIIIII III I I I I IIII II IIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIII IIII II IC AMP 0.5 1 TC _C tsv ms trv ms tfi ms tti ms tc ms 25 100 25 100 25 100 1.3 1.6 1.5 1.7 1.8 3 0.23 0.26 0.10 0.13 0.07 0.08 0.30 0.30 0.14 0.26 0.10 0.22 0.35 0.40 0.05 0.06 0.05 0.08 0.30 0.36 0.16 0.29 0.16 0.28 1.5 Vclamp MJE13003 RESISTIVE SWITCHING PERFORMANCE 2 1 0.7 0.5 t, TIME ( s) 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.03 td @ VBE(off) = 5 V tr VCC = 125 V IC/IB = 5 TJ = 25C t, TIME ( s) 10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 0.02 0.03 tf ts VCC = 125 V IC/IB = 5 TJ = 25C 0.05 0.07 0.1 0.2 0.3 0.5 0.7 10 20 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 8. Turn-On Time Figure 9. Turn-Off Time r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.02 0.03 0.05 0.1 0.2 0.3 0.5 ZqJC(t) = r(t) RqJC RqJC = 3.12C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1000 1 23 5 10 20 t, TIME OR PULSE WIDTH (ms) 50 Figure 10. Thermal Response http://onsemi.com 6 MJE13003 The Safe Operating Area figures shown in Figures 11 and 12 are specified ratings for these devices under the test conditions shown. 10 IC, COLLECTOR CURRENT (AMP) 5 2 1 dc TC = 25C THERMAL LIMIT (SINGLE PULSE) BONDING WIRE LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO MJE13003 10 20 50 100 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 5.0 ms 1.0 ms 100 ms 10 ms SAFE OPERATING AREA INFORMATION FORWARD BIAS 0.5 0.2 0.1 0.0 5 0.02 0.01 5 500 Figure 11. Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 11 may be found at any case temperature by using the appropriate curve on Figure 13. T J(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS 1.6 IC, COLLECTOR CURRENT (AMP) 1.2 VBE(off) = 9 V MJE13003 0.8 TJ 100C IB1 = 1 A 0.4 5V 3V 0 0 100 200 300 1.5 V 400 500 600 700 800 For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 12 gives RBSOA characteristics. VCEV, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS) Figure 12. Reverse Bias Safe Operating Area 1 0.8 SECOND BREAKDOWN DERATING POWER DERATING FACTOR 0.6 THERMAL DERATING 0.4 0.2 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (C) Figure 13. Forward Bias Power Derating http://onsemi.com 7 MJE13003 PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z -B- U Q F M C -A- 123 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M M A M B M B M DIM A B C D F G H J K M Q R S U V STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 MJE13003/D |
Price & Availability of MJE13003 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |