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| LESHAN RADIO COMPANY, LTD. Darlington Transistors PNP Silicon 3 COLLECTOR MMBTA63LT1 MMBTA64LT1 3 1 BASE 1 2 2 EMITTER CASE 318-08, STYLE 6 SOT-23 (TO-236AB) MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CES V CBO V EBO Value -30 -30 -10 -500 Unit Vdc Vdc Vdc mAdc IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C RJA PD RJA TJ , Tstg DEVICE MARKING MMBTA63LT1 = 2U MMBTA64LT1 = 2V ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = -100 Adc, ) Collector Cutoff Current ( V CB = -30Vdc) Emitter Cutoff Current ( V EB = -10Vdc ) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO I CBO I EBO -30 -- -- -- -100 -100 Vdc nAdc nAdc M30-1/3 LESHAN RADIO COMPANY, LTD. MMBTA63LT1 MMBTA64LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE MMBTA63 MMBTA64 MMBTA63 MMBTA64 VCE(sat) V BE(on) 5,000 10,000 10,000 20,000 -- -- -- -- -- -- -1.5 -2.0 Vdc Vdc Min Max Unit -- ON CHARACTERISTICS DC Current Gain(3) (I C = -10 mAdc, V CE = -5.0 Vdc) (I C = -10 mAdc, V CE = -5.0 Vdc) (I C = -100mAdc, V CE = -5.0Vdc) (I C = -100mAdc, V CE = -5.0Vdc) Collector-Emitter Saturation Voltage (I C = -100 mAdc, I B = -0.1 mAdc) Base-Emitter On Voltage (I C = -100mAdc, V CE = -5.0Vdc) SMALL-SIGNAL CHARACTERISTICS Current - Gain-Bandwidth Product(4) (V CE = -5.0 Vdc, I C = -10mAdc, f = 100 MHz) 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. fT 125 -- MHz M30-2/3 LESHAN RADIO COMPANY, LTD. MMBTA63LT1 MMBTA64LT1 h FE , DC CURRENT GAIN (X1.0 K) 200 T A = 125C 100 70 50 -10 V 30 20 25C V CE = -2.0 V -5.0 V 10 7.0 5.0 3.0 2.0 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -55C I C , COLLECTOR CURRENT (mA) Figure 1. DC Current Gain V CE , COLLECTOR- EMITTER VOLTAGE (VOLTS) -2.0 -2.0 T A = 25C -1.6 T A = 25C -1.8 -1.6 V BE(sat) @ I C /I B = 100 V, VOLTAGE (VOLTS) I C = -10 mA -50 mA -100 mA -175 mA -1.4 -1.2 -1.0 -0.8 -0.6 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -300 mA -1.2 V BE(on) @ V CE = -5.0 V -0.8 V CE(sat) @ I C /I B = 1000 I C /I B = 100 -0.4 -0 -0.3-0.5 -1.0 -2.0-3.0 -5.0 -10 -20-30 -50 -100 -200-300 -50-100 -300 -500 -1k -2k -5k -10k I C , COLLECTOR CURRENT (mA) I B , BASE CURRENT (mA) Figure 2. "On" Voltage |h FE |, HIGH FREQUENCY CURRENT GAIN 10 Figure 3. Collector Saturation Region V CE = -5.0 V 4.0 3.0 2.0 f = 100 MHz T A = 25C 1.0 0.4 0.2 0.1 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1k I C , COLLECTOR CURRENT (mA) Figure 4. High Frequency Current Gain M30-3/3 |
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