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| UTC MPSA 44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V(MPSA44) VCEO=350V(MPSA45) *Collector current up to 300mA *Complement to MPSA94/93 *Collector Dissipation: Pc(max)=625mW 1 APPLICATION *Telephone switching *High voltage switch SOT-89 1:EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER Collector-base voltage MPSA44 MPSA45 Collector-emitter voltage MPSA44 MPSA45 Emitter-base voltage Collector dissipation(Ta=25C) Collector dissipation(Tc=25C) Collector current Junction Temperature Storage Temperature SYMBOL VCBO RATING 500 400 UNIT V V VCEO VEBO Pc Pc Ic Tj TSTG 400 350 6 625 1.5 300 150 -55 ~ +150 V mW W mA C C ELECTRICAL CHARACTERISTICS (Tj=25C,unless otherwise specified) PARAMETER Collector-base breakdown voltage MPSA44 MPSA45 Collector-emitter breakdown voltage MPSA44 MPSA45 Emitter-base breakdown voltage Collector cut-off current MPSA44 MPSA45 Collector cut-off current MPSA44 MPSA45 SYMBOL BVCBO TEST CONDITIONS Ic=100A,IB=0 MIN 500 400 TYP MAX UNIT V BVCEO Ic=1mA,IB=0 400 350 6 0.1 0.1 A VCE=400V,IB=0 VCE=320V,IB=0 0.5 0.5 V V A BVEBO ICBO IE=100A,Ic=0 VCB=400V,IE=0 VCB=320V,IE=0 ICES UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R208-006,A UTC MPSA 44/ 45 NPN EPITAXIAL SILICON TRANSISTOR PARAMETER Emitter cut-off current DC current gain(note) SYMBOL IEBO hFE TEST CONDITIONS VEB=4V,Ic=0 VCE=10V,Ic=1mA VCE=10V,Ic=10mA VCE=10V,Ic=50mA VCE=10V,Ic=100mA Ic=1mA,IB=0.1mA Ic=10mA,IB=1mA Ic=50mA,IB=5mA Ic=10mA,IB=1mA VCE=20V,Ic=10mA, f=100MHz VCB=20V,IE=0 f=1MHz MIN 40 50 45 40 TYP MAX 0.1 240 UNIT A Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage Current gain bandwidth product Output capacitance VBE(sat) fT Cob 0.4 0.5 0.75 0.75 50 7 V V MHz pF Note:Pulse test:PW<300s,Duty Cycle<2% TYPICAL CHARACTERISTIC CURVES Fig.1 DC current gain HFE,DC current current gain 1 10 140 120 100 80 60 40 20 0 -20 -40 0 10 1 10 2 10 3 10 4 10 -1 10 0 10 1 10 Fig.2 Turn-on switching times 2 10 Fig.3 Turn-off switching times VCE=10V Time(s) Time(s) VCE=150V Ic/IB=10 Ta=25C VBE(OFF)=4V 0 10 VCE=150V Ic/IB=10 Ta=25C 1 10 Ts 0 10 Tf Tf Td 2 10 -1 10 0 10 1 10 2 10 Ic,Collector current(mA) Ic,Collector current(mA) Ic,Collector current(mA) Fig.4 Capacitance 3 10 1.0 Fig.5 ON Voltage 0.5 Fig.6 Collector saturation region Collector-Emitter voltage(V) 0.8 Ta=25 C VBE(sat),Ic/IB=10 0.4 Capacitance(pF) Ic=1mA Ic=10mA Ic=50mA voltage(V) 2 10 Cib 0.6 0.3 VBE(ON),VCE=10V 0.4 0.2 1 10 Cob 0.2 VCE(sat),Ic/IB=10 0.1 0 10 -1 10 0 10 1 10 2 10 3 10 0 -1 10 0 10 1 10 2 10 3 10 0 Ta=25 C 2 10 3 10 4 10 5 10 1 10 Collector voltage(V) Ic,Collector current(mA) Ib, base current(A) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R208-006,A UTC MPSA 44/ 45 NPN EPITAXIAL SILICON TRANSISTOR Fig.7 High Frequency current gain Small signal current gain,HFE 2 10 4 10 Fig.8 Safe operating area Valid Duty Cycle<10% 1ms 1s C 5 =2 Tc Ic,Collector current(mA) 1 10 VCE=10V f=10MHz Ta=25C 3 10 0.1ms 2 10 C 5 =2 Ta 0 10 1 10 -1 10 -1 10 0 10 1 10 2 10 3 10 0 10 MPSA44 0 10 1 10 2 10 3 10 4 10 Ic,Collector current(mA) Collector voltage(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R208-006,A |
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