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Pb
RoHS
COMPLIANCE
BC817-16 BC817-25 BC817-40
0.3 Watts NPN Plastic-Encapsulate Transistors SOT-23
Features
Ideally suited for automatic insertion Epitaxial planar die construction For switching, AF driver and amplifier applications Complementary PNP type available(BC807) Qualified to AEC-Q101 standards for high reliability
Mechanical Data
Case: SOT-23, Molded plastic Case material: molded plastic. UL flammability classification rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIIL-STD-202, Method 208 Lead free plating Marking: -16:6A, -25: 6B, -40: 6C Weight: 0.008 gram (approx.) Dimensions in inches and (millimeters)
Maximum Ratings Type Number
TA=25 C unless otherwise specified
o
Symbol
VCBO VCEO IC PC VEBO ICBO IEBO VCE(sat) VBE(sat) VBE(ON) Cob fT hFE hFE(1) hFE(2)
BC817 -16
Collector-base breakdown voltage IC=10uA, IE=0 Collector-emitter breakdown voltage IC=10mA, IB=0 Collector current - continuous Power dissipation Emitter-base breakdown voltage IE=1uA, IC=0 Collector cut-off current VCB=45V IE=0 Emitter cut-off current VEB=4V IC=0 Collector-emitter saturation voltage IC=500mA, IB=50mA Base-emitter saturation voltage IC=500mA, IB=50mA Base-emitter voltage VCE=1V IC=500mA Collecter capacitance VCB=10V f=1MHz Transition frequency VCE=5V IC=10mA f=100MHz DC current gain DC current gain VCE=1V IC=100mA VCE=1V IC=500mA Operating and Storage Temperature Range
100-250 100 >40
BC817 -25 50 45 0.5 0.3 5 0.1 0.1 0.7 1.2 1.2 10 100 160-400 >40 -55 to + 150
BC817 -40
Units
V V A W V uA uA V V V pF MHz
250-600 600 >40
o
TJ, TSTG
C
Version: B07
RATINGS AND CHARACTERISTIC CURVES (BC817-16, BC817-25, BC817-40)
FIG.1- TYPICAL PULSED CURRENT GAIN VS COLLECTOR CURRENT
VCE= 5V
IC, COLLECTOR CURRENT (mA)
400
500
3 2 1
FIG.2- COLLECTOR-EMITTER SATURATION VOLTAGE VS COLLECTOR CURRENT
-40 C
O O
hFE, TYPICAL PULSED CURRENT GAIN
300
125 C
O
O
25 C
125 C
O
200
25 C
O
0.1
100
-40 C
= 10
0 0.1 0.2 0.3 0.4 0.5 0.6
0 0.001
0.01
0.1
1
2
0.01
IC, COLLECTOR CURRENT (A)
VCE(SAT), COLLECTOR-EMITTER VOLTAGE (V)
1000
FIG.3- BASE-EMITTER SATURATION VOLTAGE VS COLLECTOR CURRENT
= 10
1000
FIG.4- BASE-EMITTER ON VOLTAGE VS COLLECTOR CURRENT
VCE= 5V
IC, COLLECTOR CURRENT (mA)
100
IC, COLLECTOR CURRENT (mA)
100
10
125 C
O
25 C
O
-40 C
O
125 C
10
O
25 C
O
-40 C
O
1 0.2
0.4
0.6
0.8
1.0
1.2
VBE(SAT), BASE-EMITTER VOLTAGE (V)
1 0.2
0.4
0.6
0.8
1.0
VBE(ON), BASE-EMITTER ON VOLTAGE (V)
100
FIG.5- COLLECTOR-CUT OFF CURRENT VS AMBLENT TEMPERATURE
40
FIG.6- COLLECTOR-BASE CAPACITANCE VS COLLECTOR-BASE VOLTAGE
VCB= 40V
35
ICBO, COLLECTOR CURRENT (nA)
10
Cob, COLLECTOR-BASE CAPACITANCE (pF)
25 50 75 100
O
30
25
1
20
15
0.1
10
5 0.01 125 150 TA, AMIBIENT TEMPERATURE ( C)
0
0
4
8
12
16
20
24
28
VCB, COLLECTOR-BASE VOLTAGE (V)
Version: B07
RATINGS AND CHARACTERISTIC CURVES (BC817-16, BC817-25, BC817-40)
FIG.7- POWER DISSIPATION VS AMBLENT TEMPERATURE
hFE, GAIN BANDWIDTH PRODUCT (MHz)
FIG.8- GAIN BANDWIDTH PRODUCT VS COLLECTOR CURRENT
500
350 300 250 200 150 100 50 0
VCE= 10V
400
PD, POWER DISSIPATION (mW)
SOT-23
300
200
100
0
25
50
75
100
125
150
TEMPERATURE ( C)
01
10
100
1000
IC, COLLECTOR CURRENT (mA)
Version: B07

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