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| BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C 80 W at 25C Case Temperature 12 A Continuous Collector Current Minimum hFE of 750 at 3V, 5 A B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BDW93 Collector-base voltage (IE = 0) BDW93A BDW93B BDW93C BDW93 Collector-emitter voltage (IB = 0) BDW93A BDW93B BDW93C Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 1) Continuous device dissipation at (or below) 25C free air temperature (see Note 2) Operating junction temperature range Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.64 W/C. 2. Derate linearly to 150C free air temperature at the rate of 16 mW/C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 12 0.3 80 2 -65 to +150 -65 to +150 -65 to +150 V A A W W C C C V V UNIT SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BDW93 V(BR)CEO IC = 100 mA IB = 0 (see Note 3) BDW93A BDW93B BDW93C VCB = 40 V ICEO Collector-emitter cut-off current VCB = 60 V VCB = 80 V VCB = 80 V VCB = 45 V VCB = 60 V VCB = 80 V ICBO Collector cut-off current VCB = 100 V VCB = 45 V VCB = 60 V VCB = 80 V VCB = 100 V IEBO Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Parallel diode forward voltage VEB = VCE = VCE = VCE = IB = IB = IE = IE = 5V 3V 3V 3V 20 mA 20 mA 5A 10 A IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = IC = IC = IC = IB = 0 IB = 0 3A (see Notes 3 and 4) 5A 5A 5A (see Notes 3 and 4) (see Notes 3 and 4) 1000 100 750 20000 2 3 2.5 4 2 4 V V V TC = 150C TC = 150C TC = 150C TC = 150C BDW93 BDW93A BDW93B BDW93C BDW93 BDW93A BDW93B BDW93C BDW93 BDW93A BDW93B BDW93C MIN 45 60 80 100 1 1 1 1 0.1 0.1 0.1 0.1 5 5 5 5 2 mA mA mA V TYP MAX UNIT hFE IC = 10 A VCE(sat) VBE(sat) VEC IB = 100 mA IB = 100 mA IC = 10 A IC = 10 A NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.56 62.5 UNIT C/W C/W 2 SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 50000 TCS130AE COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 3*0 tp = 300 s, duty cycle < 2% IB = I C / 100 2*5 TCS130AG hFE - Typical DC Current Gain TC = -40C TC = 25C TC = 100C 10000 2*0 1*5 1000 1*0 0*5 VCE = 3 V tp = 300 s, duty cycle < 2% 100 0*5 1*0 IC - Collector Current - A 10 20 TC = -40C TC = 25C TC = 100C 1*0 IC - Collector Current - A 10 20 0 0*5 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C TC = 100C TCS130AI 2*5 2*0 1*5 1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% 0*5 0*5 1*0 IC - Collector Current - A 10 20 Figure 3. SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 100 Ptot - Maximum Power Dissipation - W TIS130AA 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 4. 4 SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5 |
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