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| Philips Semiconductors Product specification Rectifier diodes ultrafast GENERAL DESCRIPTION Glass passivated, high efficiency, dual, rectifier diodes in a full pack, plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. BYV72F series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) trr PARAMETER BYV72FRepetitive peak reverse voltage Forward voltage Output current (both diodes conducting) Reverse recovery time MAX. 100 100 0.90 20 28 MAX. 150 150 0.90 20 28 MAX. 200 200 0.90 20 28 UNIT V V A ns PINNING - SOT199 PIN 1 2 3 DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) PIN CONFIGURATION case SYMBOL a1 1 k2 1 2 3 a2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage1 Output current (both diodes conducting)2 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode I2t for fusing Storage temperature Operating junction temperature square wave; = 0.5; Ths 78 C sinusoidal; a = 1.57; Ths 78 C t = 25 s; = 0.5; Ths 78 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) t = 10 ms CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 20 20 20 30 150 160 112 150 150 -200 200 200 200 UNIT V V V A A A A A A A2s C C IO(RMS) IFRM IFSM I2t Tstg Tj 1 Ths 125C for thermal stability. 2 Neglecting switching and reverse current losses. October 1994 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65 % ; clean and dustfree MIN. - BYV72F series TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF THERMAL RESISTANCES SYMBOL Rth j-hs PARAMETER Thermal resistance junction to heatsink CONDITIONS both diodes conducting with heatsink compound without heatsink compound per diode with heatsink compound without heatsink compound in free air MIN. TYP. 35 MAX. 4.0 8.0 5.0 9.0 UNIT K/W K/W K/W K/W K/W Rth j-a Thermal resistance junction to ambient STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage (per diode) Reverse current (per diode) CONDITIONS IF = 15 A; Tj = 150C IF = 15 A IF = 30 A VR = VRWM; Tj = 100 C VR = VRWM MIN. TYP. 0.83 0.95 1.00 0.5 10 MAX. 0.90 1.05 1.20 1 100 UNIT V V V mA A DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL Qs trr Irrm Vfr PARAMETER Reverse recovery charge (per diode) Reverse recovery time (per diode) Peak reverse recovery current (per diode) Forward recovery voltage (per diode) CONDITIONS IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 10 A; VR 30 V; -dIF/dt = 50 A/s; Tj = 100 C IF = 1 A; dIF/dt = 10 A/s MIN. TYP. 6 20 2 1 MAX. 15 28 2.4 UNIT nC ns A V October 1994 2 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV72F series I dI F dt F 20 PF / W Vo = 0.705 V Rs = 0.013 Ohms BYV72 Ths(max) / C 50 a = 1.57 t 15 1.9 2.2 2.8 75 rr time 10 4 100 Q I R I s 10% 100% 5 125 rrm 0 0 5 IF(AV) / A 10 150 15 Fig.1. Definition of trr, Qs and Irrm Fig.4. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). trr / ns 1000 I F IF=20A 100 time IF=1A VF V VF time fr 10 1 1 10 dIF/dt (A/us) 100 Fig.2. Definition of Vfr Fig.5. Maximum trr at Tj = 25 C; per diode 25 PF / W Vo = 0.7050 V Rs = 0.0130 Ohms BYV72 Ths(max) / C D = 1.0 25 trr / ns 1000 20 0.5 15 0.1 10 I tp D= tp T 50 IF=20A 100 0.2 75 IF=1A 100 10 5 T t 125 Tj = 100 C 0 0 5 10 15 IF(AV) / A 20 150 25 1 1 10 -dIF/dt (A/us) 100 Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D. Fig.6. Maximum trr at Tj = 100 C; per diode October 1994 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV72F series 10 Irrm / A 100 Qs / nC IF=20A 1 IF=1A IF=20A 10A 5A 2A 1A 10 0.1 0.01 1 10 -dIF/dt (A/us) 100 1.0 1.0 10 -dIF/dt (A/us) 100 Fig.7. Maximum Irrm at Tj = 25 C; per diode Fig.10. Maximum Qs at Tj = 25 C; per diode 10 IF / A 10 Zth (K/W) IF=20A 1 IF=1A 1 0.1 0.1 P D tp Tj = 100 C 0.01 1 10 -dIF/dt (A/us) 100 0.01 10 us 1 ms 0.1 t tp / s 10 s Fig.8. Maximum Irrm at Tj = 100 C; per diode Fig.11. Transient thermal impedance; per diode; Zth j-hs = f(tp). 50 IF / A Tj = 150 C 40 Tj = 25 C 30 20 typ 10 max 0 0 0.5 VF / V 1.0 1.5 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj October 1994 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast MECHANICAL DATA Dimensions in mm Net Mass: 5.5 g BYV72F series 15.3 max 0.7 7.3 3.1 3.3 6.2 5.8 21.5 max 3.2 5.2 max o 45 seating plane 3.5 3.5 max not tinned 15.7 min 1 2.1 max 2 3 1.2 1.0 5.45 0.7 max 0.4 M 2.0 5.45 Fig.12. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1994 5 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYV72F series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1994 6 Rev 1.100 |
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