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| FDA2712 N-Channel UltraFET Trench MOSFET April 2007 FDA2712 N-Channel UltraFET Trench MOSFET 250V, 64A, 34m Features * * * * * * RDS(on) = 29.2m @VGS = 10 V, ID = 40A Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability RoHS compliant UltraFET tm Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications * PDP application D G GDS TO-3PN S MOSFET Maximum Ratings Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed -Continuous (TC = 100oC) (Note 1) (Note 2) (Note 3) Ratings 250 30 64 44 240 245 4.5 357 2.85 -55 to +150 300 Units V V A A mJ V/ns W W/oC oC o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds C Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.35 40 Units o C/W (c)2007 Fairchild Semiconductor Corporation FDA2712 Rev. A 1 www.fairchildsemi.com FDA2712 N-Channel UltraFET Trench MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDA2712 Device FDA2712 Package TO-3PN Reel Size N/A Tape Width N/A Quantity 30 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS BVDSS / TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25oC VDS = 250V VGS = 0V TJ = 125oC 250 0.2 1 500 100 V V/oC A A nA VGS = 20V, VDS = 0V On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 40A VDS = 10V, ID = 40A (Note 4) 3.0 - 3.9 29.2 43 5.0 34 - V m S Dynamic Characteristics Ciss Coss Crss Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 125V, ID = 80A VGS = 10V (Note 4, 5) 7650 550 105 99 46 21 10175 735 155 129 - pF pF pF nC nC nC - Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 125V, ID = 80A VGS = 10V, RGEN = 25 (Note 4, 5) - 128 371 143 210 266 751 295 429 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 80A VGS = 0V, ISD = 80A dIF/dt = 100A/s (Note 4) - 175 1.17 80 240 1.2 - A A V ns C Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1mH, IAS = 22.2A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 80A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDA2712 Rev. A 2 www.fairchildsemi.com FDA2712 N-Channel UltraFET Trench MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 300 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Figure 2. Transfer Characteristics 1000 100 ID,Drain Current[A] ID,Drain Current[A] 100 150 C o -55 C o 10 10 25 C o * Notes : 1. 250s Pulse Test 1 0.1 2. TC = 25 C o * Notes : 1. VDS = 20V 2. 250s Pulse Test 1 VDS, Drain-Source Voltage[V] 10 1 4 6 8 VGS,Gate-Source Voltage[V] 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.08 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1000 VGS = 0V RDS(ON) [], Drain-Source On-Resistance IS, Reverse Drain Current [A] 0.06 100 150 C o 25 C o 0.04 VGS = 10V VGS = 20V 10 0.02 * Note : TJ = 25 C o 0 50 100 150 ID, Drain Current [A] 200 1 0.3 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] 1.5 Figure 5. Capacitance Characteristics 10000 Ciss Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 50V VDS = 125V VDS = 200V 8000 Capacitances [pF] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 8 6000 Coss 6 4000 * Note: 1. VGS = 0V 2. f = 1MHz 4 2000 Crss 2 * Note : ID = 80A 0 0.1 0 1 10 VDS, Drain-Source Voltage [V] 30 0 20 40 60 80 100 Qg, Total Gate Charge [nC] 120 FDA2712 Rev. A 3 www.fairchildsemi.com FDA2712 N-Channel UltraFET Trench MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -100 * Notes : 1. VGS = 10V 2. ID = 40A BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.1 1.0 0.9 * Notes : 1. VGS = 0V 2. ID = 250A 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area 1000 Figure 10. Maximum Drain Current vs. Case Temperature 80 ID, Drain Current [A] 100 100s 10 Operation in This Area is Limited by R DS(on) * Notes : 1ms 10ms 100ms ID, Drain Current [A] 400 60 40 1 0.1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 20 0.01 1 10 100 VDS, Drain-Source Voltage [V] 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve 10 Thermal Response [ZJC] 0 0.5 10 -1 0.2 0.1 0.05 PDM t1 t2 o 10 -2 0.02 0.01 Single pulse * Notes : 1. ZJC(t) = 0.35 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) 10 -3 10 -5 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 10 0 10 1 FDA2712 Rev. A 4 www.fairchildsemi.com FDA2712 N-Channel UltraFET Trench MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDA2712 Rev. A 5 www.fairchildsemi.com FDA2712 N-Channel UltraFET Trench MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS * d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDA2712 Rev. A 6 www.fairchildsemi.com FDA2712 N-Channel UltraFET Trench MOSFET Mechanical Dimensions TO-3PN FDA2712 Rev. A 7 www.fairchildsemi.com FDA2712 N-Channel UltraFET Trench MOSFET tm TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Across the board. Around the world.TM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM E2CMOSTM EcoSPARK(R) EnSignaTM FACT Quiet SeriesTM FACT(R) FAST(R) FASTrTM FPSTM FRFET(R) GlobalOptoisolatorTM GTOTM HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM Motion-SPMTM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANAR(R) PACMANTM PDP-SPMTM POPTM Power220(R) Power247(R) PowerEdgeTM PowerSaverTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM The Power Franchise(R) TM tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I25 No Identification Needed Full Production Obsolete Not In Production FDA2712 Rev. A 8 www.fairchildsemi.com |
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