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PD -95487
AUTOMOTIVE MOSFET
Typical Applications
42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free
IRF1607PBF
HEXFET(R) Power MOSFET
D
VDSS = 75V
G S
Benefits
Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified
RDS(on) = 0.0075 ID = 142A
Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw
Max.
142 100 570 380 2.5 20 1250 See Fig.12a, 12b, 15, 16 5.2 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
0.40 --- 62
Units
C/W
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1
06/30/04
IRF1607PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff.
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. 75 --- --- 2.0 79 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.086 --- V/C Reference to 25C, ID = 1mA 0.00580.0075 VGS = 10V, ID = 85A --- 4.0 V VDS = 10V, ID = 250A --- --- S VDS = 25V, ID = 85A --- 20 VDS = 75V, VGS = 0V A --- 250 VDS = 60V, VGS = 0V, TJ = 150C --- 200 VGS = 20V nA --- -200 VGS = -20V 210 320 ID = 85A 45 68 nC VDS = 60V 73 110 VGS = 10V 22 --- VDD = 38V 130 --- ID = 85A ns 84 --- RG = 1.8 86 --- VGS = 10V D Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact S 7750 --- VGS = 0V 1230 --- pF VDS = 25V 310 --- = 1.0MHz, See Fig. 5 5770 --- VGS = 0V, VDS = 1.0V, = 1.0MHz 790 --- VGS = 0V, VDS = 60V, = 1.0MHz 1420 --- VGS = 0V, VDS = 0V to 60V
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 142 showing the A G integral reverse --- --- 570 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 85A, VGS = 0V --- 130 200 ns TJ = 25C, IF = 85A --- 690 1040 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
Coss eff. is a fixed capacitance that gives the same charging time max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS . Starting TJ = 25C, L = 0.21mH Calculated continuous current based on maximum allowable RG = 25, IAS = 85A, VGS=10V (See Figure 12). junction temperature. Package limitation current is 75A. ISD 85A, di/dt 310A/s, VDD V(BR)DSS, Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive TJ 175C avalanche performance. Pulse width 400s; duty cycle 2%.
2
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IRF1607PBF
1000
1000
100
I D , Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
4.5V
10
10
4.5V 20s PULSE WIDTH Tj = 25C
1 0.1 1 10 100
1 0.1
20s PULSE WIDTH TJ = 175 C
1 10 100
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 142A
I D , Drain-to-Source Current (A)
2.5
TJ = 175 C
100
2.0
1.5
10
TJ = 25 C
1.0
0.5
1 4.0
V DS = 25V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
VGS , Gate-to-Source Voltage (V)
0.0 -60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF1607PBF
12000
20
10000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd
ID = 85A V DS = 60V V DS = 37V V DS = 15V
16
Ciss
C, Capacitance(pF)
8000
Coss = C + C ds gd
12
6000
8
4000
Coss
4
2000
Crss
0 0 100 200
FOR TEST CIRCUIT SEE FIGURE 13
300 400
0 1 10 100
Q G, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000
TJ = 175 C
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
100
1000
10
100
100sec
1
TJ = 25 C
1msec 10 Tc = 25C Tj = 175C Single Pulse 1 10 10msec 100 1000
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8 2.2
1
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF1607PBF
160
LIMITED BY PACKAGE
VDS VGS
RD
ID , Drain Current (A)
120
RG 10V
D.U.T.
+
-VDD
80
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
40
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF1607PBF
15V
EAS , Single Pulse Avalanche Energy (mJ)
3000
TOP BOTTOM
2500
VDS
L
DRIVER
ID 35A 60A 85A
2000
RG
20V VGS
D.U.T
IAS tp
+ V - DD
A
1500
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
1000
500
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS VG QGD
VGS(th) Gate threshold Voltage (V)
5.0
4.0
Charge
ID = 250A
3.0
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
2.0
D.U.T. VGS
3mA
+ V - DS
1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200
T J , Temperature ( C )
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage Vs. Temperature
6
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IRF1607PBF
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.01
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses
0.05
10
0.10
1 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
1400 1200 1000 800 600 400 200 0 25 50 75 100 125 150
EAR , Avalanche Energy (mJ)
TOP Single Pulse BOTTOM 10% Duty Cycle ID = 85A
Starting T J , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f 175 ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*t av
Fig 16. Maximum Avalanche Energy Vs. Temperature
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IRF1607PBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 17. For N-channel HEXFET(R) power MOSFETs
8
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IRF1607PBF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 2.87 (.113) 2.62 (.103)
4 15.24 (.600) 14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 1- GATE- DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- EMITTER 3- SOURCE 4 - DRAIN
HEXFET
14.09 (.555) 13.47 (.530)
4- DRAIN
4.06 (.160) 3.55 (.140)
4- COLLECTOR
3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES:
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.92 (.115) 2.64 (.104)
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMP L E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T HE AS S E MB L Y L INE "C" INT E R NAT IONAL RE CT IF IE R L OGO AS S E MB L Y L OT CODE PART NU MB E R
Note: "P" in assembly line position indicates "Lead-Free"
DAT E CODE YE AR 7 = 1997 WEE K 19 L INE C
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/04
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