 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Transistors with built-in Resistor UNR411x Series (UN411x Series) Silicon PNP epitaxial planar type Unit: mm For digital circuits Features * Costs can be reduced through downsizing of the equipment and reduction of the number of parts * New S type package, allowing supply with the radial taping 0.75 max. 4.00.2 (0.8) 3.00.2 2.00.2 Resistance by Part Number * * * * * * * * * * * * * * * * * UNR4110 (UN4110) UNR4111 (UN4111) UNR4112 (UN4112) UNR4113 (UN4113) UNR4114 (UN4114) UNR4115 (UN4115) UNR4116 (UN4116) UNR4117 (UN4117) UNR4118 (UN4118) UNR4119 (UN4119) UNR411D (UN411D) UNR411E (UN411E) UNR411F (UN411F) UNR411H (UN411H) UNR411L (UN411L) UNR411M UNR411N (R1) 47 k 10 k 22 k 47 k 10 k 10 k 4.7 k 22 k 0.51 k 1 k 47 k 47 k 4.7 k 2.2 k 4.7 k 2.2 k 4.7 k (R2) 10 k 22 k 47 k 47 k 5.1 k 10 k 10 k 22 k 10 k 10 k 4.7 k 47 k 47 k 0.45+0.20 -0.10 (2.5) (2.5) 0.45+0.20 -0.10 0.70.1 15.60.5 (0.8) 7.6 2 3 1 1: Emitter 2: Collector 3: Base NS-B1 Package Internal Connection R1 B R2 E C Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating -50 -50 -100 300 150 -55 to +150 Unit V V mA mW C C Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00018DED 1 UNR411x Series Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base UNR4110/4115/4116/4117 Symbol VCBO VCEO ICBO ICEO IEBO Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 Min -50 -50 - 0.1 - 0.5 - 0.01 - 0.1 - 0.2 - 0.5 -1.0 -1.5 -2.0 hFE VCE = -10 V, IC = -5 mA 20 30 35 60 80 80 160 VCE(sat) VOH VOL IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k VCC = -5 V, VB = -3.5 V, RL = 1 k VCC = -5 V, VB = -10 V, RL = 1 k VCC = -5 V, VB = -6 V, RL = 1 k fT R1 VCB = -10 V, IE = 1 mA, f = 200 MHz -30% 80 0.51 1.0 2.2 4.7 10 22 47 +30% MHz k -4.9 - 0.2 400 460 - 0.25 V V V Typ Max Unit V V A A mA cutoff current UNR4113 (Collector open) UNR4112/4114/411D/ 411E/411M/411N UNR4111 UNR411F/411H UNR4119 UNR4118/411L Forward current UNR4118/411L transfer ratio UNR4119/411D/411F/411H UNR4111 UNR4112/411E UNR4113/4114/411M UNR411N UNR4110 */4115 */4116 */ 4117 * Collector-emitter saturation voltage Output voltage high-level Output voltage low-level UNR4113 UNR411D UNR411E Transition frequency Input resistance UNR4118 UNR4119 UNR411H/411M UNR4116/411F/411L/411N UNR4111/4114/4115 UNR4112/4117 UNR4110/4113/411D/411E Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 No-rank 160 to 460 2 SJH00018DED UNR411x Series Electrical Characteristics (continued) Ta = 25C 3C Parameter Resistance ratio UNR411M UNR411N UNR4118/4119 UNR4114 UNR411H UNR411F UNR4111/4112/4113/411L UNR411E UNR411D 0.08 0.17 0.17 0.37 0.8 1.70 3.7 Symbol R1/R2 Conditions Min Typ 0.047 0.1 0.10 0.21 0.22 0.47 1.0 2.14 4.7 0.12 0.25 0.27 0.57 1.2 2.60 5.7 Max Unit Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta 400 Total power dissipation PT (mW) 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of UNR4110 IC VCE IB = -1.0 mA - 0.9 mA -100 - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA -60 - 0.2 mA - 0.1 mA -20 Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 hFE IC 400 VCE = -10 V -120 -10 Forward current transfer ratio hFE Collector current IC (mA) 300 Ta = 75C -1 Ta = 75C 25C - 0.1 -25C 200 25C -25C -40 100 0 0 -2 -4 -6 -8 -10 -12 - 0.01 -0.1 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00018DED 3 UNR411x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 3 -102 Input voltage VIN (V) -103 -10 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR4111 IC VCE Collector-emitter saturation voltage VCE(sat) (V) -160 IB = -1.0 mA Ta = 25C -100 VCE(sat) IC IC / IB = 10 hFE IC 160 VCE = -10 V Ta = 75C - 0.9 mA Forward current transfer ratio hFE Collector current IC (mA) -120 - 0.8 mA - 0.7 mA - 0.6 mA -10 25C 120 -25C 80 -80 - 0.5 mA - 0.4 mA - 0.3 mA -1 Ta = 75C 25C - 0.1 -25C -40 - 0.2 mA - 0.1 mA 40 0 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 - 0.01 - 0.1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 SJH00018DED UNR411x Series Characteristics charts of UNR4112 IC VCE Collector-emitter saturation voltage VCE(sat) (V) -160 Ta = 25C IB = -1.0 mA - 0.9mA - 0.8mA - 0.7mA - 0.6mA - 0.5mA -80 - 0.4mA - 0.3mA -40 - 0.2mA - 0.1mA 0 -100 VCE(sat) IC IC / IB = 10 hFE IC 400 VCE = -10 V Collector current IC (mA) -120 -10 Forward current transfer ratio hFE 300 -1 25C - 0.1 -25C Ta = 75C Ta = 75C 200 25C -25C 100 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR4113 IC VCE IB = -1.0 mA Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 400 hFE IC VCE = -10 V -160 - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA -40 - 0.2 mA - 0.1 mA 0 -2 -4 -6 -8 -10 -12 Forward current transfer ratio hFE Collector current IC (mA) -120 -10 300 Ta = 75C 25C 200 -25C -1 Ta = 75C 25C - 0.1 -25C 100 0 - 0.01 - 0.1 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00018DED 5 UNR411x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR4114 IC VCE Collector-emitter saturation voltage VCE(sat) (V) -160 Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA -40 - 0.2 mA - 0.1 mA 0 -100 VCE(sat) IC IC / IB = 10 hFE IC 400 VCE = -10 V Collector current IC (mA) -120 -10 Forward current transfer ratio hFE 300 Ta = 75C 200 25C -25C 100 -1 Ta = 75C - 0.1 25C -25C -1 -10 -100 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -1 000 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 3 -102 Input voltage VIN (V) - 0.6 - 0.8 -1.0 -1.2 -1.4 -103 -100 -10 2 -10 -1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.1 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 6 SJH00018DED UNR411x Series Characteristics charts of UNR4115 IC VCE Collector-emitter saturation voltage VCE(sat) (V) -160 IB = -1.0 mA Ta = 25C - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA - 0.2 mA -40 - 0.1 mA -100 VCE(sat) IC IC / IB = 10 hFE IC 400 VCE = -10 V Collector current IC (mA) -120 -10 Forward current transfer ratio hFE 300 Ta = 75C -1 Ta = 75C - 0.1 25C 200 25C -25C 100 -25C -1 -10 -100 0 0 -2 -4 -6 -8 -10 -12 - 0.01 -0.1 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR4116 IC VCE Collector-emitter saturation voltage VCE(sat) (V) -160 IB = -1.0 mA Ta = 25C - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA -40 - 0.2 mA - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12 -100 VCE(sat) IC IC / IB = 10 hFE IC 400 VCE = -10 V Collector current IC (mA) -120 -10 Forward current transfer ratio hFE 300 Ta = 75C -1 Ta = 75C - 0.1 25C 200 25C -25C 100 -25C -1 -10 -100 - 0.01 - 0.1 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00018DED 7 UNR411x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 3 -102 Input voltage VIN (V) -103 -10 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR4117 IC VCE Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 hFE IC 400 VCE = -10 V -120 Collector current IC (mA) -10 Forward current transfer ratio hFE -100 300 -80 -60 - 0.3 mA - 0.2 mA - 0.1 mA -1 25C - 0.1 -25C Ta = 75C 200 Ta = 75C -40 25C 100 -25C -20 0 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 3 -102 Input voltage VIN (V) - 0.6 - 0.8 -1.0 -1.2 -1.4 -103 -10 -1 2 -10 - 0.1 1 0 -0.1 -1 -10 -100 -1 - 0.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 8 SJH00018DED UNR411x Series Characteristics charts of UNR4118 IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 hFE IC 160 VCE = -10 V -240 Collector current IC (mA) -160 IB = - 1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA -10 Forward current transfer ratio hFE -200 120 -120 - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12 -1 Ta = 75C 80 25C -25C 40 Ta = 75C 25C -80 - 0.1 -25C -1 -10 -100 -40 - 0.01 - 0.1 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR4119 IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 hFE IC 160 VCE = -10 V -240 Collector current IC (mA) -160 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA -10 Forward current transfer ratio hFE -200 120 Ta = 75C 80 -120 -1 Ta = 75C 25C -25C -80 -40 0 - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA 0 -2 -4 -6 -8 -10 -12 25C - 0.1 -25C -1 -10 -100 40 - 0.01 - 0.1 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00018DED 9 UNR411x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = -0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR411D IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 160 hFE IC VCE = -10 V -60 Forward current transfer ratio hFE -50 IB = - 1.0 mA - 0.9 mA - 0.8 mA Collector current IC (mA) -10 120 Ta = 75C -40 - 0.3 mA - 0.2 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.1 mA 25C 80 -25C -30 -1 Ta = 75C - 0.1 25C -20 40 -10 -25C -1 -10 -100 0 -1 -10 -100 -1 000 0 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 10 SJH00018DED UNR411x Series Characteristics charts of UNR411E IC VCE Collector-emitter saturation voltage VCE(sat) (V) -60 IB = -1.0 mA Ta = 25C - 0.9 mA - 0.8 mA - 0.7 mA VCE(sat) IC -100 IC / IB = 10 400 hFE IC VCE = -10 V Collector current IC (mA) -10 Forward current transfer ratio hFE -50 300 -40 - 0.3 mA -30 - 0.6 mA - 0.5 mA - 0.4 mA - 0.2 mA -1 25C - 0.1 -25C Ta = 75C 200 Ta = 75C 100 25C -25C -20 - 0.1 mA -10 0 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 3 -102 Input voltage VIN (V) -2.0 -2.5 -3.0 -3.5 -4.0 -103 -10 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 -1.5 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR411F IC VCE Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 hFE IC 160 VCE = -10 V -240 Collector current IC (mA) -10 Forward current transfer ratio hFE -200 120 Ta = 75C 25C 80 -25C -160 -120 - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA -10 -12 -1 Ta = 75C 25C - 0.1 -25C -1 -10 -100 -80 40 -40 0 0 -2 -4 -6 -8 - 0.01 - 0.1 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00018DED 11 UNR411x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 3 -102 Input voltage VIN (V) - 0.6 - 0.8 -1.0 -1.2 -1.4 -103 -10 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR411H IC VCE Collector-emitter saturation voltage VCE(sat) (V) -120 Ta = 25C VCE(sat) IC -100 IC / IB = 10 240 hFE IC VCE = -10 V Collector current IC (mA) -10 -80 IB = - 0.5 mA - 0.4 mA - 0.3 mA Forward current transfer ratio hFE -100 200 160 Ta = 75C 120 25C 80 -60 -1 Ta = 75C 25C -0.1 -25C -40 - 0.2 mA -20 - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12 -25C 40 -0.01 -1 -10 -100 -1 000 0 -0.1 -1 -10 -100 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C VIN IO -100 VO = - 0.2 V Ta = 25C 5 4 Input voltage VIN (V) -10 3 -1 2 - 0.1 1 0 -1 -10 -100 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Output current IO (mA) 12 SJH00018DED UNR411x Series Characteristics charts of UNR411L IC VCE Collector-emitter saturation voltage VCE(sat) (V) -240 Ta = 25C -100 VCE(sat) IC IC / IB = 10 240 hFE IC VCE = -10 V Collector current IC (mA) -10 -160 IB = -1.0 mA - 0.8 mA - 0.6 mA - 0.4 mA - 0.2 mA 0 0 -2 -4 -6 -8 -10 -12 Forward current transfer ratio hFE -200 200 160 -120 -1 120 Ta = 75C 25C -25C Ta = 75C 25C -25C -80 80 - 0.1 -40 40 - 0.01 -1 -10 -100 -1 000 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 4 Input voltage VIN (V) -10 3 -1 2 - 0.1 1 0 -1 -10 -100 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Output current IO (mA) Characteristics charts of UNR411M IC VCE Collector-emitter saturation voltage VCE(sat) (V) -140 IB = -1.0 mA - 0.9 mA -120 - 0.8 mA - 0.7 mA -100 -80 -60 -40 -20 0 Ta = 25C -100 VCE(sat) IC IC / IB = 33.3 hFE IC 200 Ta = 75C VCE = -10 V Forward current transfer ratio hFE Collector current IC (mA) -10 160 25C -25C - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA -1 Ta = 75C 25C -25C 120 80 - 0.1 40 0 -2 -4 -6 -8 -10 -12 - 0.01 -1 -10 -100 -1 000 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00018DED 13 UNR411x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 IO VIN -1 000 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C f = 1 MHz Ta = 25C Output current IO (mA) -10 Input voltage VIN (V) - 0.5 -1.0 -1.5 -2.0 -2.5 -100 -10 -1 -1 - 0.1 1 0 -10 -20 -30 -40 - 0.1 0 - 0.01 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR411N IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA hFE IC 300 Ta = 75C VCE = -10 V -140 -120 -1 Forward current transfer ratio hFE 250 25C -25C Collector current IC (mA) -100 -80 -60 -40 -20 0 200 - 0.1 Ta = 75C 25C -25C 150 100 50 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 IC / IB = 10 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 IO VIN -100 VO = -5 V Ta = 25C -100 VIN IO f = 1 MHz Ta = 25C Output current IO (mA) Input voltage VIN (V) - 0.5 -1.0 -1.5 -2.0 -2.5 -10 -10 -1 1 0 -10 -20 -30 -40 -1 0 - 0.1 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 14 SJH00018DED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
Price & Availability of UNR4110
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |