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| Composite Transistors XP05531 Silicon NPN epitaxial planer transistor Unit: mm 0.425 1.250.1 0.425 0.20.05 For high frequency, oscillation and mixing 2.10.1 0.65 q q 0.2 q High transition frequency fT. Small collector output capacitance Cob and reverse transfer capacitance Crb. Two elements incorporated into one package. 2.00.1 s Features 0.65 1 2 3 6 5 4 0.90.1 0 to 0.1 s Basic Part Number of Element q 0.70.1 0.20.1 2SC3130 x 2 elements 1 : Emitter (Tr1) 2 : Base (Tr1) 3 : Base (Tr2) s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg (Ta=25C) Ratings 15 10 3 50 150 150 -55 to +150 Unit V V V mA mW C C 4 : Collector (Tr2) 5 : Emitter (Tr2) 6 : Collector (Tr1) EIAJ : SC-88 S-Mini Type Package (6-pin) Marking Symbol: 5M Internal Connection 1 2 3 Tr1 6 5 4 Tr2 s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio hFE2/hFE1 ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Common base reverse transfer capacitance Collector to base parameter (Ta=25C) Symbol VCEO VEBO ICBO ICEO hFE1 hFE2/hFE1 VCE(sat) fT Cob Crb rbb.CC Conditions IC = 2mA, IB = 0 IE = 10A, IC = 0 VCB = 10V, IE = 0 VCE = 10V, IB = 0 VCE = 4V, IC = 5mA VCE = 4V, IC = 100A VCE = 4V, IC = 5mA IC = 20mA, IB = 4mA VCB = 4V, IE = -5mA, f = 200MHz VCB = 4V, IE = 0, f = 1MHz VCB = 4V, IE = 0, f = 1MHz VCB = 4V, IE = -5mA, f = 31.9MHz 1.4 1.9 0.9 0.25 11.8 75 0.75 min 10 3 1 10 400 1.6 0.5 2.5 1.1 0.35 13.5 V GHz pF pF ps typ max Unit V V A A 0.12 -0.02 +0.05 1 Composite Transistors PT -- Ta 200 80 Ta=25C 50 25C Ta=75C 40 XP05531 IC -- VCE 60 VCE=4V IC -- VBE Total power dissipation PT (mW) 180 Collector current IC (mA) 60 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 IB=500A 40 400A 300A 20 200A 100A 0 0 2 4 6 8 10 12 Collector current IC (mA) 160 -25C 30 20 10 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC 100 hFE -- IC IC/IB=10 360 VCE=4V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.1 0 -0.1 -0.3 fT -- I E VCB=4V Ta=25C Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 300 Ta=75C 240 10 3 1 0.3 25C 0.1 -25C 0.03 0.01 0.1 Ta=75C 180 25C 120 -25C 60 0.3 1 3 10 30 100 Transition frequency fT (GHz) 30 0.3 1 3 10 30 100 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 1.6 Collector output capacitance Cob (pF) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10 f=1MHz IE=0 Ta=25C 30 100 Collector to base voltage VCB (V) 2 |
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