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AO7413 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7413 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected to 2KV HBM. Standard Product AO7413 is Pb-free (meets ROHS & Sony 259 specifications). AO7413L is a Green Product ordering option. AO7413 and AO7413L are electrically identical.
Features
VDS (V) = -20V ID = -1.4A (VGS = -10V) RDS(ON) < 113m (VGS = -10V) RDS(ON) < 135m (VGS = -4.5V) RDS(ON) < 180m (VGS = -2.5V)
SC-70 (SOT-323) Top View G D S G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -20 12 -1.4 -1.2 -3 0.35 0.22 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 300 350 280
Max 360 425 320
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO7413
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, V DS=-5V VGS=-10V, I D=-1.4A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-4.5V, I D=-1.3A VGS=-2.5V, I D=-1.1A gFS VSD IS Forward Transconductance VDS=-5V, ID=-1.4A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.7 -15 94 130 111 150 5 -0.84 -0.95 0.6 512 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 77 62 9.2 4.9 VGS=-4.5V, VDS=-10V, ID=-1.4A 3.5 3.7 11 VGS=-4.5V, VDS=-10V, RL=7.1, RGEN=3 IF=-1.4A, dI/dt=100A/s IF=-1.4A, dI/dt=100A/s 8 34 12 12.9 3.9 13 10 41 15 16 5 13 6 620 113 160 135 180 -0.9 Min -20 -0.5 -2.5 1 10 -1.4 Typ Max Units V A A A V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO7413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25 20 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 180 Normalized On-Resistance 160 RDS(ON) (m) 140 VGS=-4.5V 120 100 80 0 1 2 3 4 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 360 320 280 RDS(ON) (m) -IS (A) 240 200 160 25C 120 80 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C ID=-1.4A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.4 0.8 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C VGS=-10V VGS=-2.5V 1.6 -9V -8V -7V -6V -10V 10 -5V -4V -3.5V 6 -3V -2.5V -2V VGS=-1.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 -VGS(Volts) Figure 2: Transfer Characteristics -ID(A) 4 125C 2 25C 8 VDS=-5V
-ID (A)
VGS=-2.5V ID=-1.1A
1.4 VGS=-4.5V ID=-1.3A 1.2 VGS=-10V ID=-1.4A 1
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
Alpha & Omega Semiconductor, Ltd.
AO7413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 -Qg (nC) Figure 7: Gate-Charge Characteristics
100.00 VDS=-10V ID=-1.4A Capacitance (pF) 600 800 Ciss
400 Coss 200 Crss
0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics
TJ(Max)=150C TA=25C RDS(ON) limited 100s 1ms 0.1s 10ms
14 12 10s 10 Power (W) 8 6 4 10s DC 2 0 0.001
10.00 -ID (Amps)
TJ(Max)=150C TA=25C
1.00
0.10
1s
0.01 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=360C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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