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| BFR460L3 NPN Silicon RF Transistor Preliminary data For low voltage / low current applications Ideal for VCO modules and low noise amplifiers Low noise figure: 1.1 dB at 1.8 GHz World's smallest SMD leadless package Excellent ESD performance (>1500V HBM) High fT of 22 GHz 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR460L3 Maximum Ratings Parameter Marking AB Pin Configuration 1=B 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value Package TSLP-3-1 Unit Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1)2) Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter TS 4.5 15 15 1.5 50 5 200 150 -65 ... 150 -65 ... 150 Value V mA mW C 108C 1P due to Maximum Ratings tot 2T is measured on the collector lead at the soldering point to the pcb S 3For calculation of R please refer to Application Note Thermal Resistance thJA 1 Junction - soldering point3) Unit 210 K/W May-14-2003 BFR460L3 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0,5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3 V hFE 50 130 200 IEBO 1 A ICBO 100 nA V(BR)CEO 4.5 5 V Symbol min. Values typ. max. Unit 2 May-14-2003 BFR460L3 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 30 mA, VCE = 3 V, f = 1 GHz Unit 16 - 22 0.3 0.14 0.55 0.45 - GHz pF Collector-base capacitance VCB = 3 V, f = 1 MHz, emitter grounded Ccb Cce Ceb F Collector emitter capacitance VCE = 3 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure IC = 5 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz IC = 5 mA, VCE = 3 V, ZS = ZSopt , f = 3 GHz dB 1.1 1.35 16.0 dB Power gain, maximum stable1) IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gms - Power gain, maximum available1) IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 3 GHz Gma - 11 - dB Transducer gain IC = 20 mA, VCE = 3 V, ZS = ZL = 50, f = 1,8 GHz IC = 20 mA, VCE = 3 V, ZS = ZL = 50 , f = 3 GHz |S21e|2 IP3 P-1dB dB 14 10 27 11.5 dBm Third order intercept point at output2) VCE = 3 V, IC = 20 mA, f = 1.8 GHz - 1dB Compression point at output IC = 20 mA, VCE = 3 V, f = 1.8 GHz 1G 1/2 ma = |S21 / S12| (k-(k-1) ), Gms = S21 / S12 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3 May-14-2003 BFR460L3 Collector-base capacitance Ccb = (VCB ) f = 1MHz 0.8 pF Transition frequency fT = (IC) f = 1 GHz VCE = parameter in V 26 GHz 2 to 4V 1V 0.6 Ccb 0.5 fT 0.4 0.3 10 0.2 8 6 0.1 4 0 0 2 4 6 8 10 V VCB VCE = 3 V, IC = 20 mA 50 dB VCE = 3V f = parameter in GHz 24 dB 40 35 G G 20 18 16 14 12 |S21| Gma 1.8 30 25 20 15 10 5 0 0 GHz f Gms 10 8 6 4 0 1 2 3 4 6 5 10 15 20 4 Power gain Gma, Gms , |S21 |2 = (f) 22 20 18 16 14 12 14 2 0 5 10 15 20 25 30 35 mA IC 45 Power gain Gma, Gms = (IC ) 0.9 2.4 3 4 5 6 25 30 mA IC 40 May-14-2003 BFR460L3 Power gain Gma, Gms = IC = 20 mA f = parameter in GHz 24 dB 0.9 (VCE ) 20 18 1.8 16 14 12 10 8 6 4 2 0 0.5 1 1.5 2 2.5 3 3.5 V VCE 2.4 3 4 5 6 G 4.5 5 May-14-2003 |
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