 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDD8750 N-Channel PowerTrench(R) MOSFET December 2006 FDD8750 N-Channel PowerTrench(R) MOSFET 25V, 2.7A, 40m Features General Description This N-Channel MOSFET has been designed specifically to improve the overall effciency of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on) and fast switching speed. Max rDS(on) = 40m at VGS = 10V, ID = 2.7A Max rDS(on) = 60m at VGS = 4.5V, ID = 2.7A Low gate charge: Qg(10) = 6nC(Typ) Low gate resistance Avalanche rated and 100% tested RoHS Compliant tm Application Low current DC-DC switching Linear regulation D D S G G D O -2 52 T -PA K (TO -252) S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous(Package Limited) -Continuous(Silicon Limited) -Continuous -Pulsed Drain-Source Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC= 25C (Note 1a) (Note 3) TC= 25C TC= 25C TA= 25C (Note 1) (Note 1a) Ratings 25 20 2.7 16 6.5 14 19 18 3.7 -55 to +175 mJ W C A Units V V Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 8 40 C/W Package Marking and Ordering Information Device Marking FDD8750 Device FDD8750 Package D-PAK(TO-252) Reel Size 13'' Tape Width 12mm Quantity 2500 units (c)2006 Fairchild Semiconductor Corporation FDD8750 Rev.C 1 www.fairchildsemi.com FDD8750 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS =20V, VGS = 0V TJ=150C VGS = 20V, VGS = 0V 25 18 1 250 100 V mV/C A nA On Characteristics (Note 2) VGS(th) VGS(th) TJ rDS(on) Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 2.7A VGS = 4.5V, ID = 2.7A VGS = 10V, ID = 2.7A, TJ=150C 1.2 2.0 -5 28 39 44 40 60 63 m 2.5 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 13V, VGS = 0V, f = 1MHz f = 1MHz 320 80 50 1.8 425 110 75 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg(5) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VGS = 0V to 5V VDD =13V ID = 2.7A VDD = 13V, ID = 2.7A VGS = 10V, RGEN = 6 3 12 8 5 6 3.4 1.1 1.2 10 22 16 10 9 5 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 2.7A (Note 2) 0.8 16 7 1.6 24 11 V ns nC IF = 2.7A, di/dt = 100A/s Notes: 1: RJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a. 40C/W when mounted on a 1 in2 pad of 2 oz copper; b. 96C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3: Starting TJ = 25C, L = 3mH, IAS = 3.6A, VDD = 25V, VGS = 10V. FDD8750 Rev.C 2 www.fairchildsemi.com FDD8750 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 60 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 40 30 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 10V VGS = 5V VGS = 4.5V 3.0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 2.5 VGS = 4V VGS = 4.5V 2.0 1.5 1.0 0.5 20 10 0 0.0 VGS = 5V VGS = 10V VGS = 4V 0.5 1.0 1.5 2.0 2.5 3.0 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 30 40 ID, DRAIN CURRENT(A) 50 60 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 100 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) ID = 2.7A VGS = 10V ID = 7.4A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 80 TJ = 150oC 60 TJ = 25oC 40 20 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature 40 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 20 10 VGS = 0V ID, DRAIN CURRENT (A) 30 TJ = -55oC TJ = 25oC TJ = 175oC 1 20 0.1 TJ = 175oC TJ = 25oC 10 0.01 TJ = -55oC 0 0 2 4 6 VGS, GATE TO SOURCE VOLTAGE (V) 8 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDD8750 Rev.C 3 www.fairchildsemi.com FDD8750 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 8 6 VDD = 18V 600 ID = 2.7A VDD = 8V VDD = 13V CAPACITANCE (pF) Ciss Coss 4 2 0 100 f = 1MHz VGS = 0V Crss 0 2 4 6 Qg, GATE CHARGE(nC) 8 20 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 20 ID, DRAIN CURRENT (A) 3 IAS, AVALANCHE CURRENT(A) 16 12 8 Limited by Package VGS =4.5V VGS = 10V 2 TJ = 125oC TJ = 25oC TJ = 150oC 4 0 RJC = 8 C/W o 1 1E-3 0.01 0.1 1 tAV, TIME IN AVALANCHE(ms) 10 25 50 75 100 125 o 150 175 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 50 ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Case Temperature 3000 P(PK), PEAK TRANSIENT POWER (W) 10 1000 VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - T c ---------------------150 Tc = 25oC 100us 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1ms SINGLE PULSE TJ = MAX RATED TC = 25OC 100 10ms DC SINGLE PULSE 0.1 0.1 1 10 60 10 -5 10 10 -4 VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 t, PULSE WIDTH (s) -3 -2 -1 10 0 10 1 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDD8750 Rev.C 4 www.fairchildsemi.com FDD8750 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER 1 NORMALIZED THERMAL IMPEDANCE, ZJC 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC SINGLE PULSE 0.01 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDD8750 Rev.C 5 www.fairchildsemi.com FDD8750 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 Preliminary No Identification Needed Full Production Obsolete Not In Production FDD8750 Rev. C 6 www.fairchildsemi.com |
Price & Availability of FDD8750
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |