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MITSUBISHI Nch POWER MOSFET
FS20KM-6
HIGH-SPEED SWITCHING USE
FS20KM-6
OUTLINE DRAWING
10 0.3 6.5 0.3 3 0.3
Dimensions in mm
2.8 0.2
15 0.3
3.2 0.2
14 0.5
3.6 0.3
1.1 0.2 1.1 0.2 0.75 0.15
0.75 0.15
2.54 0.25
2.54 0.25 4.5 0.2 q GATE w DRAIN e SOURCE
123 2.6 0.2
w
VDSS ................................................................................ 300V rDS (ON) (MAX) .............................................................. 0.26 ID .......................................................................................... 20A Viso ................................................................................ 2000V
q
e
TO-220FN
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg Viso --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V
Conditions
Ratings 300 30 20 60 40 -55 ~ +150 -55 ~ +150
Unit V V A A W C C Vrms g
Feb.1999
AC for 1minute, Terminal to case Typical value
2000 2.0
MITSUBISHI Nch POWER MOSFET
FS20KM-6
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 300V, VGS = 0V ID = 1mA, VDS = 10V ID = 10A, VGS = 10V ID = 10A, VGS = 10V ID = 10A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 300 30 -- -- 2 -- -- 8.5 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 0.20 2.0 13.0 1400 280 55 25 50 150 65 1.5 -- Max. -- -- 10 1 4 0.26 2.6 -- -- -- -- -- -- -- -- 2.0 3.13
Unit V V A mA V V S pF pF pF ns ns ns ns V C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 150V, ID = 10A, VGS = 10V, RGEN = RGS = 50
IS = 10A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1
tw=10s 100s 1ms 10ms TC = 25C Single Pulse DC 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V)
40
30
20
10
0
0
50
100
150
200
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) PD = 40W VGS = 20V 10V
DRAIN CURRENT ID (A)
50
TC = 25C Pulse Test
OUTPUT CHARACTERISTICS (TYPICAL) PD= 40W VGS=20V 20 10V 6V 5.5V
DRAIN CURRENT ID (A)
40
7V
16 TC = 25C Pulse Test 12 5V
30 6V 20 5V 10 4V 0 0 10 20 30 40 50
8 4.5V 4
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS20KM-6
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20 0.5 TC = 25C Pulse Test 16 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25C Pulse Test 0.4
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
12 ID = 40A 8 20A 10A 0 0 4 8 12 16 20
0.3
VGS = 10V 20V
0.2
4
0.1 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 40 TC = 25C VDS = 50V Pulse Test 102 7 5
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
32
24
3 2 101 7 5 3 2 100 0 10 23 5 7 101 TC = 25C
16
75C 125C 23 5 7 102
8
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 5 3 2 Ciss 103 7 5
SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25C VDD = 150V VGS = 10V RGEN = RGS = 50 td(off)
103 7 5 3 2 102 7 5 Coss
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
3 2 102 7 5 3 2 101 100 23
tf tr td(on) 5 7 101 23 5 7 102
Crss 3 Tch = 25C 2 f = 1MHz VGS = 0V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS20KM-6
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 40 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) VGS = 0V Pulse Test 25C 24 75C
GATE-SOURCE VOLTAGE VGS (V)
16
SOURCE CURRENT IS (A)
Tch = 25C ID = 20A VDS = 50V 100V 200V 8
TC = 125C 32
12
16
4
8
0
0
20
40
60
80
100
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10-1 -50 0 50 100 150 5.0 VGS = 10V ID = 1/2ID Pulse Test
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
3.0
2.0
1.0
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D=1 3 2 0.5 100 7 5 3 2 10-1 7 5 3 2 0.2 0.1 PDM 0.05 0.02 0.01 Single Pulse
tw T D= tw T
1.0
0.8
0.6
0.4
-50
0
50
100
150
10-2
10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (C)

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