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| NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.11 (max) NUltra High-Speed Switching NSOT-89 Package GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP161A02A1PR is an N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-89 package makes high density mounting possible. Low on-state resistance : Rds(on)=0.11(Vgs=4.5V) : Rds(on)=0.17(Vgs=2.5V) Ultra high-speed switching Operational Voltage : 2.5V High density mounting : SOT-89 PIN NUMBER 1 2 3 PIN NAME G D S FUNCTION Gate Drain Source 11 PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 20 12 3 9 3 2 150 -55~150 Ta=25: UNITS V V A A A W : : Note: When implemented on a ceramic PCB 854 DC Characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage Note: Effective during pulse test. Ta=25: SYMBOL Idss Igss Vgs(off) Rds(on) Yfs Vf CONDITIONS Vds=20V, Vgs=0V Vgs=12V, Vds=0V Id=1mA, Vds=10V Id=1.5A, Vgs=4.5V Id=1.5A, Vgs=2.5V Id=1.5A, Vds=10V If=3A, Vgs=0V MIN TYP MAX 10 10 0.7 0.08 0.13 5 0.85 1.1 0.11 0.17 UNITS A A V S V Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=10V, Vgs=0V f=1MHz MIN TYP 300 170 60 MAX Ta=25: UNITS pF pF pF Switching Characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=5V, Id=1.5A Vdd=10V CONDITIONS MIN TYP 10 15 45 35 MAX Ta=25: UNITS ns ns ns ns Thermal Characteristics PARAMETER Thermal Resistance (channel-ambience) SYMBOL Rth (ch-a) CONDITIONS Implement on a ceramic PCB MIN TYP 62.5 MAX UNITS :/W 11 855 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Pulse Test, Ta=25: DRAIN CURRENT vs. GATE-SOURCE VOLTAGE Pulse Test, Vds=10V Drain-Source Voltage:Vds (V) Drain Current:Id (A) Drain Current:Id (A) Gate-Source Voltage:Vgs (V) DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE Pulse Test, Ta=25: DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulse Test, Ta=25: Drain-Source On-State Resistance :Rds (on) () Drain-Source On-State Resistance :Rds (on) () Gate-Source Voltage:Vgs (V) Drain Current:Id (A) 11 Drain-Source On-State Resistance :Rds (on) () DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE Pulse Test GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE Vds=10V, Id=1mA Ambient Temp.:Topr (:) Gate-Source Cut-Off Voltage Variance Vgs (off) Variance (V) Ambient Temp. Topr (:) 856 CAPACITANCE vs. DRAIN-SOURCE VOLTAGE Vgs=0V, f=1MHz SWITCHING TIME vs. DRAIN CURRENT Vgs=5V, Vdd 10V, PW=10sec. duty1% Capacitance:Ciss, Coss, Crss (pF) Switching Time:t (ns) Capacitance:C (pF) Drain Current Id (A) GATE-SOURCE VOLTAGE vs. GATE CHARGE Vds=10V, Id=3A REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE Pulse Test Gate-Source Voltage:Vgs (V) Gate Charge:Qg (nc) Reverse Drain Current:Id (A) Source-Drain Voltage:Vsd (V) STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH Rth (ch-a)=62.5C/W, (Implemented on a ceramic PCB) 11 Single Pulse Pulse Width:PW (sec) 857 |
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