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| Diotec Silicon-Power Rectifiers 1N 1183 ... 1N 1190, 1N 3766, 1N 3768 PBY 301 ... PBY 307 Silizium-Leistungs-Gleichrichter Nominal current - Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Metal case - Metallgehause Weight approx. - Gewicht ca. 35 A 50...1000 V O 4 0.5 DO-5 6g 26 10% lb.in. 3 10% Nm SW17 M6 Recommended mounting torque Empfohlenes Anzugsdrehmoment Dimensions / Mae in mm Standard: Cathode to stud / am Gewinde Index R: Anode to stud / am Gewinde (e.g. 1N 1183 R) Maximum ratings Type Typ 1N 1183 1N 1184 1N 1186 1N 1188 1N 1190 1N 3766 1N 3768 PBY 301 PBY 302 PBY 303 PBY 304 PBY 305 PBY 306 PBY 307 Repetitive peak reverse voltage Periodische Spitzensperrspg. VRRM [V] 50 100 200 400 600 800 1000 Grenzwerte Surge peak reverse voltage Stospitzensperrspannung VRSM [V] 60 120 240 480 720 1000 1200 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Peak fwd. half sine-wave surge current, TA = 25C superimposed on rated load Stostrom fur eine Sinus-Halbwelle, uberlagert bei Nennlast TC = 100C IFAV 35 A 1) f > 15 Hz IFRM i2t 80 A 1) TA = 25C 1000 A2s f = 60 Hz f = 50 Hz IFSM IFSM 500 A 450 A 1 ) Valid, if the temp. of the stud is kept to 100C - Gultig, wenn die Temp. am Gewinde auf 100C gehalten wird 01.01.99 54 1N 1183 ... 1N 1190, 1N 3766, 1N 3768 PBY 301 ... PBY 307 Diotec Tj TS - 65...+175C - 65...+175C Operating junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Characteristics Forward voltage Durchlaspannung Leakage current Sperrstrom Tj = 25C IF = 100 A VF Kennwerte < 1.5 V Tj = 25C VR = VRRM IR < 500 A Thermal resistance junction to stud Warmewiderstand Sperrschicht - Gehause RthC < 1 K/W 01.01.99 55 This datasheet has been download from: www..com Datasheets for electronics components. |
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