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2SB1260 PNP Plastic-Encapsulate Transistor SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 C ABSOLUTE MAXIMUM RATINGS (Ta=25% ) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC I CP Collector Power Dissipation Junction Temperature, Storage Temperature PC T j , Tstg Value -80 -80 -5.0 1.0 2.0 0.5 150, -55 to +150 Unit Vdc Vdc Vdc Adc(DC) Adc (Pulse) W % C Device Marking 2SB1260=ZL ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -50 Adc, IE=0) Emitter-Base Breakdown Voltage (IE= -50 Adc, IC=0) Collector Cutoff Current (VCB= -60 Vdc, IE=0) Emitter Cutoff Current (VEB=-4.0 Vdc, IC =0) 1.FR-5=1.0 x 0.75 x 0.062 in. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min -80 -80 -5.0 Max -1 -1 Unit Vdc Vdc Vdc uAdc uAdc WE ITR O N http://www.weitron.com.tw 2SB1260 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC=-0.1 Adc, VCE=-3.0 Vdc) Collector-Emitter Saturation Voltage (IC=-500 mAdc, IB=-50mAdc) Transition Frequency (IC=-50 mAdc, VCE=-5.0 Vdc,f=30 MHz) hFE VCE(sat) fT 82 390 -0.4 Vdc MHz 80 CLASSIFICATION OF hFE Item Range P 82-180 Q 120-270 R 180-390 WEITRON http://www.weitron.com.tw 2SB1260 -1000 C OLLE C T OR C UR R E NT : IC (mA) C OLLE C T OR C UR R E NT : IC (mA) T a=25u C V C E =-5V -1.0 T a=25u C -0.45mA -100 -0.8 -0.4mA -0.35mA -0.3mA -0.25mA -0.2mA -0.15mA -0.1mA -0.05mA IB=0mA -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -10 -0.6 -0.4 -0.2 0 0 -1 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 B AS E T O E MIT T E R V OLT AG E : V B E (V ) C OLLE C T OR T O E MIT T E R V OLT AG E : V C E (V ) FIG.1 Grounded Emitter Propagation Characteristics 1000 500 T a=25u C FIG.2 Grounded Emitter Output Characteristics T a=25u C C OLLE C TOR S ATUR ATION VOLTAG E : VCE(sat) (V) -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -1 -2 -5 -10 -20 -50 -100-200-500 -1000-2000 DC C UR R E NT G AIN : hFE 200 100 50 V C E =-3V -1V IC/IB=20 10 20 10 -1 -2 -5 -10 -20 -50-100 -200 -500-1000-2000 C OLLE C T OR C UR R E NT : IC (mA) C OLLE C T OR C UR R E NT : IC (mA) FIG.3 DC Current Gain vs. Collector Current T a=25u C V C E =-5V FIG.4 1000 500 200 100 50 20 10 5 2 Collector-Emitter Saturation Voltage vs. Collector Current T a=25u C f=1MHz IE =0A 500 200 100 50 20 10 5 2 1 1 2 5 10 20 C OLLE C TOR OUTP UT C AP AC ITANC E : C ob (pF ) 1000 T R ANS IT ION F R E QUE NC Y : fT (MHz) 50 100 200 500 1000 1 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 E MIT T E R C UR R E NT : IE (mA) C OLLE C T OR T O B AS E V OLT AG E : V C B (V ) FIG.5 Gain Bandwidth Product vs. Emitter Current FIG.6 Collector Output Capacitance vs. Collector-Base Voltage WEITRON http://www.weitron.com.tw 2SB1260 E MIT T E R INP UT C AP AC IT ANC E : C ib (pF ) 1000 500 C OLLE C T OR C UR R E NT : IC (A) T a=25u C f=1MHz IC=0A -2 IC Max. (P uls e) -1 IC Max. -0.5 DC T a=25u C S ingle nonrepetitive puls e * PW 200 100 50 0 =1 PW 0 =1 s 0m ms -0.2 -0.1 20 10 -0.1 -0.05 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 E MIT T E R T O B AS E V OLT AG E : V E B (V ) C OLLE C T OR T O E MIT T E R V OLT AG E : V C E (V ) FIG. 7 Emitter Input Capacitance vs. Emitter-Base Voltage FIG. 8 Safe Operating Area WEITRON http://www.weitron.com.tw 2SB1260 SOT-89 Outline Dimensions unit:mm SOT-89 E G A J C H K L B D Dim A B C D E G H J K L Min Max 1.600 1.400 0.520 0.320 0.560 0.360 0.440 0.350 4.600 4.400 1.800 1.400 2.600 2.300 4.250 3.940 1.500TYP 3.100 2.900 WEITRON http://www.weitron.com.tw |
Price & Availability of 2SB1260
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