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| AP9563GK Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Lower Gate Charge Fast Switching Characteristic RoHS Compliant SOT-223 D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S D G -40V 40m -6.8A ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -40 25 -6.8 -5.4 -30 2.8 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 45 Unit /W Data and specifications subject to change without notice 200914051-1/4 AP9563GK Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -40 -1 - Typ. -0.03 10 20 4 10 12 6 70 36 240 185 5.8 Max. Units 40 60 -3 -1 -25 100 30 8.7 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-40V, VGS=0V VDS=-32V, VGS=0V VGS=25V ID=-6A VDS=-32V VGS=-4.5V VDS=-20V ID=-1A RG=3.3,VGS=-10V RD=20 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1600 2560 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=-2.2A, VGS=0V IS=-6A, VGS=0V, dI/dt=100A/s Min. - Typ. 28 30 Max. Units -1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 120 /W when mounted on Min. copper pad. 2/4 AP9563GK 50 50 40 T A = 25 C o -ID , Drain Current (A) 30 -ID , Drain Current (A) -10V -7.0V -5.0V -4.5V 40 TA=150 C o -10V -7.0V -5.0V -4.5V 30 20 20 V G = - 3 .0V 10 V G = - 3 .0V 10 0 0 3 6 9 12 15 0 0 3 6 9 12 15 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 65 2.0 55 ID=-4A T A =25 Normalized RDS(ON) ID=-6A V G =-10V 1.6 RDS(ON) (m ) 45 1.2 35 0.8 25 0.4 3 5 7 9 11 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 6 4 Normalized -VGS(th) (V) 1.4 1.1 -IS(A) T j =150 o C 2 T j =25 o C 0.8 0 0 0.2 0.4 0.6 0.8 1 1.2 0.5 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP9563GK f=1.0MHz 16 10000 -VGS , Gate to Source Voltage (V) 12 I D = -6A V DS = -32V C (pF) C iss 1000 8 4 C oss C rss 0 0 10 20 30 40 50 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 100us 10 0.2 1ms -ID (A) 1 0.1 0.1 0.05 10ms 100ms 0.02 0.01 PDM 0.01 t T Single Pulse 0.1 1s T A =25 o C Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=120 oC/W DC 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 V DS =-5V -ID , Drain Current (A) VG QG -4.5V QGS QGD 20 T j =25 o C T j =150 o C 10 Charge 0 0 2 4 6 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 |
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