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APTM100H45SCTG
Full bridge
Series & SiC parallel diodes
VDSS = 1000V RDSon = 450m typ @ Tj = 25C ID = 18A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies
Q3
MOSFET Power Module
VBUS
CR1A
CR3A
Q1
CR1B
CR3B
G1 S1 CR2A OUT1 OUT2 CR4A
G3 S3
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated * Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
Q2
CR2B
CR4B
Q4
G2 S2 NTC1 0/VBUS NTC2
G4 S4
* * * *
OUT2
G3 S3
G4 S4
VBUS
0/VBUS
OUT1
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant Max ratings 1000 18 14 72 30 540 357 18 50 2500 Unit V A V m W A mJ
July, 2006 1-7 APTM100H45SCTG - Rev 2
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy
T c = 25C T c = 80C
T c = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM100H45SCTG
All ratings @ Tj = 25C unless otherwise specified
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS
Electrical Characteristics
Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
Test Conditions
VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V
Tj = 25C Tj = 125C
Min
Typ
VGS = 10V, ID = 9A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
450 3
Max 100 500 540 5 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 18A Inductive switching @ 125C VGS = 15V VBus = 667V ID = 18A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 667V ID = 18A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 667V ID = 18A, R G = 5
Min
Typ 4350 715 120 154 26 97 10 12 121 35 383 380 627 451
Max
Unit pF
nC
ns
J
J
Series diode ratings and characteristics
Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/s VR=200V Tj = 25C Tj = 125C Tc = 85C
Min 200
Typ
Max 250 500
Unit V A A
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
Tj = 25C Tj = 125C Tj = 25C Tj = 125C
24 48 33 150
ns nC
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2-7
APTM100H45SCTG - Rev 2
July, 2006
Tj = 125C
30 1.1 1.4 0.9
1.15 V
APTM100H45SCTG
Parallel SiC diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRRM IF VF QC Q Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 10A Test Conditions VR=1200V Tj = 25C Tj = 150C Tc = 125C Tj = 25C Tj = 175C Min 1200 Typ 100 200 10 1.6 2.6 28 90 66 Max 400 2000 1.8 3.0 Unit V A A V nC pF
IF = 10A, VR = 600V di/dt =800A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Transistor Series diode
Min
Typ
Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Max 0.35 1.2 1.5 150 125 100 4.7 160
Unit
C/W
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
2500 -40 -40 -40 2.5
V C N.m g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
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3-7
APTM100H45SCTG - Rev 2
July, 2006
APTM100H45SCTG
SP4 Package outline (dimensions in mm)
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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4-7
APTM100H45SCTG - Rev 2
July, 2006
APTM100H45SCTG
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 60 I D, Drain Current (A) ID, Drain Current (A) 50 40 30 20 10 0 0 5 10 15 20 25 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS=10V @ 9A V GS=10V 5.5V 5V VGS =15&8V 7V 6.5V 6V
Transfert Characteristics 80 70 60 50 40 30 20 10 0 30 0 1 2 3 4 5 6
T J=25C T J=125C T J=-55C
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
7
8
9 10
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 20 18 16 14 12 10 8 6 4 2 0 25 50 75 100 125 150
July, 2006 5-7 APTM100H45SCTG - Rev 2
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=20V
10
20
30
40
50
ID, Drain Current (A)
TC, Case Temperature (C)
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APTM100H45SCTG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 40 80 120 160 200 Gate Charge (nC)
July, 2006
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=9A
100
100s limited by RDSon
10
1ms
10ms
1
Single pulse TJ =150C TC=25C 1 10 100 1000 VDS, Drain to Source Voltage (V)
0
Gate Charge vs Gate to Source Voltage ID=18A TJ=25C
VDS=200V V DS =500V VDS=800V
10000
Ciss Coss Crss
1000
100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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6-7
APTM100H45SCTG - Rev 2
APTM100H45SCTG
Delay Times vs Current 160 140 td(on) and td(off) (ns) 120 100 80 60 40 20 0 5 10 15 20 25 30 35 40 I D, Drain Current (A) Switching Energy vs Current td(on) 10 0 5 10 15 20 25 30 ID, Drain Current (A) 35 40
VDS=667V RG=5 TJ=125C L=100H
Rise and Fall times vs Current 60
V DS =667V RG =5 T J=125C L=100H
t d(off) tr and tf (ns)
50 40 30 20
tf
tr
Switching Energy vs Gate Resistance 2.5
V DS =667V ID=18A T J=125C L=100H
1.5
Switching Energy (mJ)
Eon
1
Switching Energy (mJ)
V DS =667V RG =5 T J=125C L=100H
Eoff
2 1.5 1 0.5 0
0.5
Eoff
Eon Eoff 0 5 10 15 20 25 30
0 5 10 15 20 25 30 35 40
I D, Drain Current (A) Operating Frequency vs Drain Current
VDS=667V D=50% RG=5 T J=125C T C=75C
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage I DR, Reverse Drain Current (A) 1000
300 250 Frequency (kHz) 200 150 100 50 0 6 8 10 12 14 16 ID, Drain Current (A) 18
Hard switching ZCS ZVS
100
TJ=150C
10
T J=25C
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
July, 2006
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7-7
APTM100H45SCTG - Rev 2
APTM100H45SCTG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.6 Thermal Impedance (C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7
0 0.00001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Characteristics
TJ=25C
Reverse Characteristics
20
I F Forward Current (A)
400
IR Reverse Current (A)
15 10
TJ=75C
300 200 100 0 400
T J=125C
T J=75C T J=125C T J=175C T J=25C
5 0 0 0.5 1 1.5 2
TJ=175C
2.5
3
3.5
600
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
800 1000 1200 1400 1600 VR Reverse Voltage (V)
800 700 C, Capacitance (pF) 600 500 400 300 200 100 0 1
July, 2006
10 100 VR Reverse Voltage
1000
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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8-7
APTM100H45SCTG - Rev 2

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