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| BCP 29, BCP 49 NPN Darlington Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 1.65 4 0.2 0.3 6.5 0.1 3 0.2 1.5 W SOT-223 0.04 g Plastic case Kunststoffgehause 3.5 Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1 0.7 2.3 2 3 3.25 Dimensions / Mae in mm 1 = B1 2, 4 = C 3 = E2 Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (DC) Peak Collector current - Kollektor-Spitzenstrom Base current - Basisstrom (DC) Peak Base current - Basisstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IB IBM Tj TS 7 Grenzwerte (TA = 25/C) BCP 29 30 V 40 V 10 V 1.5 W 1) 500 mA 800 mA 100 mA 200 mA 150/C - 65...+ 150/C BCP 49 60 V 80 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 30 V IE = 0, VCB = 60 V IE = 0, VCB = 30 V, TA = 150/C IE = 0, VCB = 60 V, TA = 150/C IC = 0, VEB = 5 V BCP 29 BCP 49 BCP 29 BCP 49 ICB0 ICB0 ICB0 ICB0 IEB0 - - - - - Kennwerte (Tj = 25/C) Typ. - - - - - Max. 100 nA 100 nA 10 :A 10 :A 100 nA Emitter-Base cutoff current - Emitterreststrom 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 4 Darlington Transistors Characteristics (Tj = 25/C) Min. Collector saturation volt. - Kollektor-Sattigungsspg. 1) IC = 100 mA, IB = 0.1 mA IC = 100 mA, IB = 0.1 mA BCP 29 BCP 49 BCP 29 BCP 49 BCP 29 BCP 49 BCP 29 BCP 49 VCEsat VBEsat hFE hFE hFE hFE hFE hFE hFE hFE fT CCB0 - - 4000 2000 10000 4000 20000 10000 4000 2000 - - BCP 29, BCP 49 Kennwerte (Tj = 25/C) Typ. - - - - - - - - - - 200 MHz 6.5 pF RthA RthS BCP 28, BCP 48 Max. 1V 1.5 V - - - - - - - - - - 93 K/W 2) 17 K/W Base saturation voltage - Basis-Sattigungsspannung 1) DC current gain - Kollektor-Basis-Stromverhaltnis 1) VCE = 1 V, IC = 0.1 mA VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 100 mA VCE = 5 V, IC = 500 mA Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 50 mA, f = 100 MHz VCB = 10 V, IE = ie = 0, f = 1 MHz Thermal resistance - Warmewiderstand junction to ambient air - Sperrschicht zu umgebender Luft junction to soldering point - Sperrschicht zu Lotpad Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Pinning - Anschlubelegung 4=2 Collector-Base Capacitance - Kollektor-Basis-Kapazitat 1 2 3 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 5 |
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