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PD - 94905 IRG4BC10UDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous Generation IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-220AB package Lead-Free UltraFast CoPack IGBT C Features VCES = 600V VCE(on) typ. = 2.15V G E @VGE = 15V, IC = 5.0A n-channel tf (typ.) = 140ns Benefits Generation 4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing Parameter V CES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. TO-220AB Absolute Maximum Ratings Max. 600 8.5 5.0 34 34 4.0 16 20 38 15 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. Typ. 0.50 2 (0.07) Max. 3.3 7.0 80 Units C/W g (oz) www.irf.com 1 12/23/03 IRG4BC10UDPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.54 VCE(on) Collector-to-Emitter Saturation Voltage 2.15 2.61 2.30 VGE(th) Gate Threshold Voltage 3.0 VGE(th) /TJ Temperature Coeff. of Threshold Voltage -8.7 gfe Forward Transconductance 2.8 4.2 ICES Zero Gate Voltage Collector Current V FM Diode Forward Voltage Drop 1.5 1.4 IGES Gate-to-Emitter Leakage Current V(BR)CES Max. Units Conditions V VGE = 0V, IC = 250A V/C VGE = 0V, IC = 1.0mA 2.6 IC = 5.0A VGE = 15V V IC = 8.5A See Fig. 2, 5 IC = 5.0A, TJ = 150C 6.0 VCE = VGE, IC = 250A mV/C VCE = VGE, IC = 250A S VCE = 100V, IC = 5.0A 250 A VGE = 0V, VCE = 600V 1000 VGE = 0V, VCE = 600V, T J = 150C 1.8 V IC = 4.0A See Fig. 13 1.7 IC = 4.0A, TJ = 125C 100 n A VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr Irr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. Typ. 15 2.6 5.8 40 16 87 140 0.14 0.12 0.26 38 18 95 250 0.45 7.5 270 21 3.5 28 38 2.9 3.7 40 70 280 235 Max. Units Conditions 22 IC = 5.0A 4.0 nC VCC = 400V See Fig. 8 8.7 VGE = 15V TJ = 25C ns IC = 5.0A, VCC = 480V 130 VGE = 15V, RG = 100 210 Energy losses include "tail" and diode reverse recovery. mJ See Fig. 9, 10, 18 0.33 TJ = 150C, See Fig. 11, 18 ns IC = 5.0A, VCC = 480V VGE = 15V, RG = 100 Energy losses include "tail" and mJ diode reverse recovery. nH Measured 5mm from package VGE = 0V pF VCC = 30V See Fig. 7 = 1.0MHz 42 ns TJ = 25C See Fig. 57 TJ = 125C 14 IF = 4.0A 5.2 A TJ = 25C See Fig. 6.7 TJ = 125C 15 VR = 200V 60 nC TJ = 25C See Fig. 105 TJ = 125C 16 di/dt = 200A/s A/s TJ = 25C See Fig. TJ = 125C 17 Details of note through are on the last page 2 www.irf.com IRG4BC10UDPBF 7 For both: 6 LOAD CURRENT (A) 5 4 3 2 1 0 Ideal diodes Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 9.2 W Square wave: 60% of rated voltage I 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C, Collector-to-Emitter Current (A) TJ = 25 oC 10 TJ = 150 oC I C, Collector-to-Emitter Current (A) 10 TJ = 150 o C 1 TJ = 25 oC V CC = 50V 5s PULSE WIDTH 5 6 7 8 9 10 11 12 13 14 0.1 V GE = 15V 20s PULSE WIDTH 1 10 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4BC10UDPBF 10 5.0 8 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 10 A Maximum DC Collector Current(A) 4.0 6 3.0 4 IC = 5.0 A 5 IC = 2.5 A 2 2.0 0 25 50 75 100 125 150 TC , Case Temperature ( C) 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC10UDPBF 500 400 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 5.0A 16 C, Capacitance (pF) 300 Cies 12 200 8 100 Coes Cres 4 0 1 10 0 0 4 8 12 16 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.30 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C I C = 5.0A 10 100 RG = Ohm VGE = 15V VCC = 480V 1 IC = 10 A IC = 5.0A 5A IC = 2.5 A 0.25 0.1 0.20 50 60 70 80 90 100 0.01 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG RG , Gate Resistance () , Gate Resistance (Ohm) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC10UDPBF 1.4 1.0 0.8 0.6 0.4 0.2 0.0 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ 1.2 VCC VGE = 100 Ohm = 150 C = 480V = 15V 100 VGE = 20V T J = 125 oC 10 0 2 4 6 8 10 1 SAFE OPERATING AREA 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current ( A ) 10 TJ = 150C T = 125C J J T = 25C 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Forward Voltage Drop -- V FM ( V ) (V) Forward Voltage Drop V FM 6 Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current www.irf.com IRG4BC10UDPBF 50 14 VR = 200V TJ = 125C TJ = 25C 45 I F = 8.0A I F = 4.0A 12 10 40 I F = 8.0A I F = 4.0A trr- (nC) Irr- ( A) 8 35 6 30 4 25 VR = 200V TJ = 125C TJ = 25C 20 100 2 di f /dt - (A/s) 1000 0 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 200 VR = 200V TJ = 125C TJ = 25C 160 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 200V TJ = 125C TJ = 25C I F = 8.0A I F = 8.0A di (rec) M/dt- (A /s) Qrr- (nC) 120 I F = 4.0A I F = 4.0A 80 40 0 100 di f /dt - (A/s) 1000 100 100 A di f /dt - (A/s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com Fig. 17 - Typical di(rec)M/dt vs. dif/dt, 7 IRG4BC10UDPBF Same type device as D.U.T. 90% Vge +Vge Vce 80% of Vce 430F D.U.T. Ic 10% Vce 90% Ic Ic 5% Ic td(off) tf Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Eoff = t1+5S Vce Ic Vce ic dtdt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg Ic trr Qrr = trr id dt Ic dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk 10% Irr Vcc Vpk Irr Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Vce dt Eon = Vce ieIc dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4 Erec = Vd idIc dt Vd dt t3 t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC10UDPBF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000F 100V Vc* D.U.T. RL= 0 - 480V 480V 4 X I C @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4BC10UDPBF Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG = 100 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. TO-220AB Package Outline 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IG B Ts, C oP A C K 1 - GATE 2 1- G A T E- DRAIN 1- GATE 32- D R A IN SOURCE 2 - C O LL E C T O R 3- S O U R C E 3 - E M ITT E R 4 - DRAIN L E A D A S S IG N M E N T S H EXFET 14.09 (.555) 13.47 (.530) 4- D R A IN 4.06 (.160) 3.55 (.140) 4 - C O LL E C T O R 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M B A M 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E X AM P L E : T H IS IS AN IR F 1 0 10 L OT COD E 17 8 9 AS S E MB L E D O N W W 1 9, 1 9 9 7 I N T H E AS S E M B L Y L I N E "C " I N T E R N AT IO N AL R E CT IF IE R L OGO AS S E M B L Y L O T CO D E P AR T N U M B E R N o te : "P " in as se m b ly lin e p o sitio n ind ic a te s "L e a d -F re e" D AT E COD E Y E AR 7 = 1 9 9 7 WE E K 19 L IN E C IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/03 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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