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| MDS1100 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55TU-1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation 8750 Device Dissipation @ 25C1 Maximum Voltage and Current Collector to Base Voltage (BVces) 65 Emitter to Base Voltage (BVebo) 4.5 Collector Current (Ic) 100 Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 W V V A C C ELECTRICAL CHARACTERISTICS @ 25C SYMBOL Pout Pg c RL Tr Pd VSWR CHARACTERISTICS Power Out Power Gain Collector Efficiency Return Loss Rise Time Pulse Droop Load Mismatch Tolerance 1 TEST CONDITIONS F = 1030 MHz, Vcc = 50 Volts Note 2 MIN 1000 8.9 45 11 TYP MAX UNITS W dB % dB F = 1030 MHz, Vcc = 50 Volts Note 2 4.0:1 100 0.7 nS dB FUNCTIONAL CHARACTERISTICS @ 25C BVebo BVces hFE jc1 NOTES: Emitter to Base Breakdown Collector to Emitter Breakdown DC - Current Gain Thermal Resistance Ie = 50 mA Ic = 100 mA Vce = 5V, Ic = 5A 3.5 65 20 0.02 V V C/W 1. At rated output power and pulse conditions 2. 128 s burst, 0.5 s on/0.5 s off, 6.4 ms period, Pin = 130 Watts Rev B, September 2005 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Gain vs. Output Power 9.6 9.4 Efficiency vs. Output Power 48 46 44 42 40 38 36 34 32 30 200 Gain (dBm) 9.2 9 8.8 8.6 8.4 8.2 0 200 400 600 800 1000 1200 Efficiency (%) 400 600 800 1000 1200 Pout (W) Pout (W) Zin Zcl R (ohms) jX (ohms) Zin 1.75 +j2.37 Zcl 0.60 -j1.62 Frequency = 1030 MHz, Vcc = 50V, Pin = 130W Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MDS1100 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MDS1100 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. |
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