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 MIG300Q2CMB1X
MITSUBISHI SEMICONDUCTOR
MIG300Q2CMB1X (1200V/300A 2in1)
High Power Switching Applications Motor Control Applications
* * * * * * Integrates inverter power circuits and control circuits (IGBT drive unit, units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. The electrodes are isolated from the case. Low thermal resistance VCE (sat) = 2.4 V (typ.) UL recognized: File No.E87989 Weight: 380 g (typ.)
Equivalent Circuit
1 2 3 4 5 6 7 8
FO GND IN VD
FO GND IN VD
GND VS
OUT
GND VS
OUT
E2 C2/E1 1. 5. FO (L) FO (H) 2. 6. GND (L) GND (H) 3. 7. IN (L) IN (H)
C1
4. 8.
VD (L) VD (H)
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MIG300Q2CMB1X
Package Dimensions
Unit: mm
1. 5.
FO (L) FO (H)
2. 6.
GND (L) GND (H)
3. 7.
IN (L) IN (H)
4. 8.
VD (L) VD (H)
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MIG300Q2CMB1X
Signal Terminal Layout
Unit: mm
1. 5.
FO (L) FO (H)
2. 6.
GND (L) GND (H)
3. 7.
IN (L) IN (H)
4. 8.
VD (L) VD (H)
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Maximum Ratings (Tj = 25C)
Stage Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Control supply voltage Control Input voltage Fault output voltage Fault output current Operating temperature Storage temperature Module Isolation voltage Screw torque (terminal) Screw torque (mounting) AC 1 min M6 M5 Tc = 25C, DC Tc = 25C, DC Tc = 25C VD-GND terminal IN-GND terminal FO-GND terminal FO sink current Characteristics Condition P-N power terminal Symbol VCC VCES IC IF PC Tj VD VIN VFO IFO Rating 900 1200 300 300 2840 150 20 20 20 10 -20~+100 -40~+125 2500 3 3 Unit V V A A W C V V V mA C C V Nm Nm

Tc Tstg VISO
Electrical Characteristics
1. Inverter stage
Characteristics Collector cut-off current Symbol ICEX Test Condition VCE = 1200 V VD = 15 V IC = 300 A VIN = 15 V 0 V Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min VCC = 600 V, IC = 300 A VD = 15 V, VIN = 15 V 0 V Tj = 25C, Inductive load (Note 1) Typ. 2.4 2.8 2.2 2.0 0.5 0.3 1.6 0.3 Max 1 10 2.8 2.6 3.0 2.5 s V V Unit mA
Collector-emitter saturation voltage Forward voltage
VCE (sat) VF ton tc (on)
IF = 300 A, Tj = 25C
Switching time
trr toff tc (off)
Note 1: Switching time test circuit & timing chart
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2. Control stage (Tj = 25C)
Characteristics Control circuit current Input on signal voltage Input off signal voltage Protection Fault output current Normal Overcurrent protection trip level Short-circuit protection trip level Overcurrent cut-off time Overtemperature protection Control supply under voltage protection Fault output pulse width Trip level Reset level Trip level Reset level High side Low side Symbol ID (H) ID (L) VIN (on) VIN (off) IFO (on) IFO (off) OC SC toff (OC) OT OTr UV UVr tFO VD = 15 V VD = 15 V Test Condition Min 1.4 2.2 8 480 480 110 11.0 12.0 1 Typ. 13 13 1.6 2.5 10 5 118 98 12.0 12.5 2 Max 17 17 1.8 2.8 12 mA 0.1 125 12.5 13.0 3 ms A A s C V Unit mA
VD = 15 V
VD = 15 V VD = 15 V, Tj < 125C = VD = 15 V, Tj < 125C = VD = 15 V Case temperature
V
3. Thermal resistance (Tc = 25C)
Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) IGBT FRD Compound is applied Test Condition Min Typ. 0.013 Max 0.044 0.068 C/W Unit C/W
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Switching Time Test Circuit
Intelligent power module TLP559 (IGM) VD 0.1 F 15 k OUT IN 15 V 68 F GND VS C1
GND C2/E1 VCC
VD IF = 16 mA PG 15 V 68 F GND 0.1 F 15 k OUT IN VS E2
GND
Timing Chart
Input pulse 15 V VIN Waveform 0
2.5 V
1.6 V
90% Irr IC Waveform Irr 90% trr 20% Irr
VCE Waveform
10% toff
10% tc (off)
10% ton
10% tc (on)
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MIG300Q2CMB1X
4. Recommended conditions for application
Characteristics Supply voltage Control supply voltage Carrier frequency Dead time Symbol VCC VD fc tdead Test Condition P-N power terminal VD-GND signal terminal PWM control Switching time test circuit (Note 2) Min 13.5 5 Typ. 600 15 Max 800 16.5 20 Unit V V kHz s
Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above.
Dead Time Timing Chart
15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead
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IC - VCE
700 700
IC - VCE
600
600 VD = 13 V VD = 15 V
(A)
(A)
VD = 17 V 500 400
VD = 17 V 500 VD = 13 V 400 VD = 15 V 300 200 100
IC
Collector current
300
200 100
Collector current
IC
0 0
Common emitter Tj = 25C 1 2 3 4 5
0 0
Common emitter Tj = 125C 1 2 3 4 5
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
Switching time - IC
10 10
Switching time - IC
(s)
1 tc (on) tc (off) 0.1 Tj = 25C VCC = 600 V VD = 15 V L-LOAD 0 100 200 300 400
(s)
ton toff
ton toff 1 tc (on) tc (off)
Switching time
Switching time
0.1 Tj = 125C VCC = 600 V VD = 15 V L-LOAD 100 200 300 400
0.01
0.01 0
Collector current IC (A)
Collector current IC (A)
IF - VF
700 600 1000
trr, Irr - IF
Peak reverse recovery current Irr (A) Reverse recovery time trr (x 10 ns)
Irr
(A)
500
Forward current IF
100
400 300 200 Common cathode 100 0 0 : Tj = 25C : Tj = 125C 1 2 3 4
10
trr Common cathode : Tj = 25C : Tj = 125C
1 0
100
200
300
400
Forward voltage
VF (V)
Forward current
IF (A)
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MIG300Q2CMB1X
OC - Tc
1000
ID - fc
60
(A)
(mA) ID Control circuit current
OC
50
800
Over current protection trip level
40
600
30
400
20
200 VD = 15 V 0 25 50 75 100 125 150
10 VD = 15 V Tj = 25C 0 5 10 15 20 25
0
0
Case temperature
Tc
(C)
Carrier frequency
fc (kHz)
Reverse bias SOA
Rth (t) (C/W)
600 1 0.3
Rth (t) - tw
480
OC
(A)
Diode stage 0.1 0.03 0.01
IC
Transient thermal resistance
360
Collector current
Transistor stage
240
0.003 0.001 Tc = 25C 0.0003 0.001 0.01
120 Tj < 125C = VD = 15 V 0 0 400 800 1200 1600
0.1
1
10
Collector-emitter voltage
VCE
(V)
Pulse width
tw (s)
Turn on loss - IC
100 100
Turn off loss - IC
Eon (mJ)
10
(mJ) Turn off loss Eoff
VCC = 600 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C
10
Turn on loss
1
1 VCC = 600 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 0.1 0 100 200 300 400
0.1 0
100
200
300
400
Collector current IC (A)
Collector current IC (A)
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