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PD410PI
PD410PI
s Features
1. Peak sensitivity wavelength matching with infrared LED( p= 1 000nm ) 2. Built-in visible light cut-off filter
High Speed Photodiode
s Outline Dimensions
Detector center Rest of gate 0.4MAX. 4.0
0.2
( Unit : mm )
2.0 0.2 R1.75 1.5 8 0.5
2.4
2.5
5.0 0.2
0.45
17.15 + 1.5 - 1.0
1. Infrared remote controllers for TVs, VCRs, audio equipment and air conditioners, etc.
0.4
2.54 8 1 8
0.5MIN.
2 1 Anode 2 Cathode 2
s Absolute Maximum Ratings
Parameter Reverse voltage Power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol VR P Topr Tstg Tsol Rating 32 150 - 25 to + 85 - 40 to + 100 260
( Ta = 25C )
Unit V mW C C C
*1 For 5 seconds at the position of 2.15mm from the bottom face of resin package
s Electro-optical Characteristics
Parameter Shortcircuit current Short-circuit current temperature coefficient Dark current Dark current temperature coefficient Terminal capacitance Peak sensitivity wavelength Peak spectral sensitivity Half intensity angle Response time Symbol ISC T Id T Ct p K tr , t f Conditions E V = 100 lx E V = 100 lx VR= 10V, E V= 0 VR= 10V, E V= 0 VR= 3V, f= 1MHz = 1000nm RL= 1k , VR= 10V MIN. 2.5 TYP. 3.0 0.2 0.5 3.5 20 1000 1 45 200
( Ta = 25C )
MAX. 4.5 10 5.0 35 Unit A % /C nA times/10C pF nm A/W ns
" In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. "
3.75
0.2
1
Black epoxy resin ( Visible light cut-off type )
s Applications
0.8
2.15
8
PD410PI
Fig. 1 Power Dissipation vs. Ambient Temperature
200
Fig. 2 Spectral Sensitivity
100 Ta = 25C 90 80
Power dissipation P ( mW )
150 Relative sensitivity(%) 70 60 50 40 30 20 10 0 - 25 0 0 25 50 75 85 100 600 700 Ambient temperature Ta ( C ) 800 900 1000 Wavelength ( nm ) 1100 1200
100
50
Fig. 3 Dark Current vs. Ambient Temperature
10 - 6 VR = 10V 10 - 7 Dark current I d ( A ) 10 - 8 Dark current I d (A) 10 - 9
Fig. 4 Dark Current vs. Reverse Voltage
10 -7
5 2
T a = 25C
10 -8
5 2
10 -9
5 2
10 - 10 10 - 11 10 - 12
10 -10
5 2
10 -11 - 25 0 25 50 75 Ambient temperature Ta ( C ) 100 5 10- 2 2 5 10- 1 2 512 5 10 2 Reverse voltage V ( V ) R 5
Fig. 5 Terminal Capacitance vs. Reverse Voltage
60 f = 1MHz T a = 25C Terminal capacitance C t ( pF ) 50
Fig. 6 Relative Output vs. Ambient Temperature ( Emitter : GL537 / GL538) Detector:PD410PI)
160 140 Relative output ( % ) 120 100 80 60 40 ( Test circuit ) GL537 PD410Pl GL538 A
40
30
20 10
20 0 0.05 0.1 0.2 0 - 25
0.5
1
2
5
10
20
50
Distance between infrared light emitting diode and photodiode shall be fixed when I SC = 100 A at I = 20mA and T a = 25C. 0 25 50 75 Ambient temperature Ta ( C )
F
100
Reverse voltage VR ( V )
PD410PI
Fig. 7 Sensitivity Diagram
- 20 - 10 0 100 (%) - 30 80 + 30 GL538
( Ta = 25 C )
+10 +20
Fig. 8 Relative Output vs. Distance (Emitter : GL537/ GL538, Detector :PD410PI)
100
Relative radiant intensity
Relative output ( % )
- 40
60
10
GL537
+ 40
- 50 - 60 - 70 - 80 - 90
40
+ 50 + 60
1
20 + 70 + 80 + 90 IF = 20mA Ta = 25C 10 -3 10 -2 10 -1 Distance between emitter and detector d (m )
0 Angular displacement
0.1 10 - 4
Fig. 9 Responce Time vs. Load Resistance
10 2
5 2
VR = 10V T a = 25C
Test Circuit for Responce Time
Responce time t r , t f ( s )
10 1
5 2
Laser diode
IOUT = 0.1mA PD410PI + Output RL 10V
Input
10 0
5 2
Output
90% 10%
10
-1
5 2
Pulse generator 2 5 10 2 2 5 10 3 2 5 10 4 2 5 10 5
tr
tr
10
-2
10
Load resistance R L ( )
q Please refer to the chapter "Precautions for Use. "

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