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| STP4N150 STW4N150 N-channel 1500V - 5 - 4A - TO-220/TO-247 Very high PowerMESHTM Power MOSFET General features Type STP4N150 STW4N150 VDSS (@Tjmax) 1500 V 1500 V RDS(on) <7 <7 ID 4A 4A 3 1 2 Avalanche ruggedness Gate charge minimized Very low intrinsic capacitances High speed switching TO-220 TO-247 Description Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Internal schematic diagram Applications Switching application Order codes Part number STP4N150 STW4N150 Marking P4N150 W4N150 Package TO-220 TO-247 Packaging Tube Tube August 2006 Rev 4 1/14 www.st.com 14 Contents STP4N150 - STW4N150 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STP4N150 - STW4N150 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID ID IDM (1) PTOT Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 k) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 1500 1500 30 4 2.5 12 160 1 -55 to 150 Unit V V V A A A W W/C C Tj Tstg Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area Table 2. Symbol Thermal data Parameter TO-220 Value TO-247 0.78 62.5 50 C/W C/W Unit Rthj-case Rthj-amb Thermal resistance junction-case max Thermal resistance junction-ambient max Table 3. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Value 4 350 Unit A mJ 3/14 Electrical characteristics STP4N150 - STW4N150 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on On/off states Parameter Drain-source Breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125C VGS = 30 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 2 A 3 4 5 Min. 1500 10 500 100 5 7 Typ. Max. Unit V A A A V Table 5. Symbol gfs (1) Ciss Coss Crss Td(on) Tr td(off) tf Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 30 V , ID = 2 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 3.5 1300 120 12 35 30 45 45 30 10 9 50 Max. Unit S pF pF pF ns ns ns ns nC nC nC VDD = 750 V, ID = 2 A, RG = 4.7 , VGS = 10 V (see Figure 18) VDD = 600 V, ID = 4 A, VGS = 10 V (see Figure 19) 1. Pulsed: pulse duration=300s, duty cycle 1.5% 4/14 STP4N150 - STW4N150 Electrical characteristics Table 6. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4 A, VGS = 0 ISD = 4 A, di/dt = 100 A/s VDD = 45V (see Figure 18) ISD = 4 A, di/dt = 100 A/s VDD = 45V, Tj = 150C (see Figure 18) 510 3 12 Test conditions Min. Typ. Max. 4 12 2 Unit A A V ns C A Reverse recovery time Reverse recovery charge Reverse recovery current 615 4 12.6 ns C A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% 5/14 Electrical characteristics STP4N150 - STW4N150 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-247 Figure 4. Thermal impedance for TO-247 Figure 5. Output characterisics Figure 6. Transfer characteristics 6/14 STP4N150 - STW4N150 Figure 7. Transconductance Figure 8. Electrical characteristics Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature 7/14 Electrical characteristics Figure 13. Source-drain diode forward characteristics STP4N150 - STW4N150 Figure 14. Normalized BVDSS vs temperature Figure 15. Maximum avalanche energy vs temperature 8/14 STP4N150 - STW4N150 Test circuit Package mechanical data 3 Test circuit Package mechanical data Figure 17. Unclamped inductive waveform Figure 16. Unclamped inductive load test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load switching and diode recovery times 9/14 Package mechanical data STP4N150 - STW4N150 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/14 STP4N150 - STW4N150 Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 11/14 Package mechanical data STP4N150 - STW4N150 TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 12/14 STP4N150 - STW4N150 Revision history 5 Revision history Table 7. Date 29-Mar-2005 07-Jul-2005 07-Oct-2005 10-Aug-2006 Revision history Revision 1 2 3 4 First release Removed TO-220FP Complete version New template, no content change Changes 13/14 STP4N150 - STW4N150 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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