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| AO4474 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4474 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AO4474 is Pb-free (meets ROHS & Sony 259 specifications). AO4474L is a Green Product ordering option. AO4474 and AO4474L are electrically identical. Features VDS (V) = 30V ID = 13.4A (VGS = 10V) RDS(ON) <11.5m (VGS = 10V) RDS(ON) < 13.5m (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A C Maximum Junction-to-Lead TA=25C TA=70C IDSM IDM PD TJ, TSTG Maximum 30 12 13.4 10.7 60 3.7 2.4 -55 to 150 Units V V A W C Symbol t 10s Steady-State Steady-State RJA RJL Typ 28 57 16 Max 34 71 23 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4474 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=13.4A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=10A Forward Transconductance VDS=5V, ID=13.4A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 60 9.5 16.2 11 40 0.74 1.0 5 1210 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 330 85 1.2 22 VGS=10V, VDS=15V, ID=13.4A 10 3.7 2.7 10 VGS=10V, VDS=15V, RL=1.1, RGEN=3 IF=13.4A, dI/dt=100A/s 6.3 21 2.8 36 47 45 1.6 28 1452 11.5 18 13.5 1.55 Min 30 1 5 0.1 2.5 Typ Max Units V uA A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=13.4A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 ms pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev1: Apr 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4474 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 80 60 40 20 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 15 Normalized On-Resistance 13 RDS(ON) (m) VGS=4.5V 11 9 7 5 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 20 ID=13.4A RDS(ON) (m) 15 IS (A) 125C 1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 30 60 90 120 150 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5 ID=13.4A VGS=10V VGS=2.5V 4.5V ID(A) 3V 6V 25 20 15 10 5 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 125 25C 30 VDS=5V ID (A) VGS=10V 10 25C Alpha & Omega Semiconductor, Ltd. AO4474 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 Capacitance (pF) VGS (Volts) 6 4 2 0 0 5 10 15 20 25 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=13.4A 1500 Ciss 2000 1000 Coss Crss 500 100.0 10s 10.0 ID (Amps) RDS(ON) limited 10ms DC TJ(Max)=150C TA=25C 100 1m 140 120 100 Power (W) 80 60 40 20 TJ(Max)=150C TA=25C 1.0 0.1 0.0 0.01 0.1 1 VDS (Volts) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note G) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=34C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 100 1000 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. |
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