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| AP02N60I Advanced Power Electronics Corp. Repetitive Avalanche Rated Fast Switching Simple Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 8 2A Description The TO-220CFM package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power supplies ,AC-DC converters and high current high speed switching circuits. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 600 30 2 1.26 3.6 22 0.176 2 Units V V A A A W W/ mJ A mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 80 2 2 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 5.7 62 Unit /W /W Data & specifications subject to change without notice 200117032 AP02N60I Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 600 2 - Typ. 0.6 0.2 14 2 8.5 9.5 12 21 9 155 27 14 Max. Units 8 4 10 100 100 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=1A VDS=VGS, ID=250uA VDS=20V, ID=1A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= 30V ID=2A VDS=480V VGS=10V VDS=300V ID=2A RG=10,VGS=10V RD=150 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.5V 1 Min. - Typ. - Max. Units 2 3.6 1.5 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 3 Tj=25, IS=2A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=40mH , RG=25 , IAS=2A. 3.Pulse width <300us , duty cycle <2%. AP02N60I 1.5 T C =25 o C 10V 6.0V 5.5V 0.8 T C =150 o C 10V 6.0V 5.5V ID , Drain Current (A) ID , Drain Current (A) 1 0.6 5.0V 0.4 5.0V 0.5 V GS =4.5V 0.2 V GS =4.5V 0 0 5 10 15 20 0 0 5 10 15 20 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.8 2.4 I D =1A V GS =10V 1.1 2 Normalized BVDSS (V) Normalized R DS(ON) 1.6 1 1.2 0.8 0.9 0.4 0.8 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( C ) o Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature AP02N60I 2.4 30 2 ID , Drain Current (A) 1.6 20 1.2 PD (W) 10 0 25 50 75 100 125 150 0.8 0.4 0 0 50 100 150 T c , Case Temperature ( C ) o Tc, Case Temperature ( C ) o Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 10 1 Duty Factor = 0.5 Normalized Thermal Response (R thjc) 100us 1 0.2 1ms ID (A) 10ms 0.1 0.1 0.1 0.05 100ms 0.02 PDM t 0.01 Single Pulse T Duty Factor = t/T Peak Tj = P DM x Rthjc + TC T C =25 o C Single Pulse 0.01 1 10 100 1000 10000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP02N60I f=1.0MHz 16 1000 I D =2A 14 V DS =320V V DS =400V V DS =480V VGS , Gate to Source Voltage (V) 12 10 Ciss C (pF) 100 8 6 4 Coss 2 Crss 0 0 2 4 6 8 10 12 14 16 18 20 10 1 5 9 13 17 21 25 29 V DS (V) Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 5 4 10 VGS(th) (V) 1.4 1.6 T j = 150 o C IS (A) T j = 25 o C 3 2 1 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 0 -50 0 50 100 150 V SD (V) T j , Junction Temperature ( o C ) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP02N60I VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.5x RATED VDS RG G 10% + 10 V S VGS VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 10V D G S + 0.8 x RATED VDS QGS QGD VGS 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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