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| AP9575H/J Advanced Power Electronics Corp. Lower On-resistance Simple Drive Requirement Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -60V 90m -15A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9575J) is available for low-profile applications. G D S GD S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -60 25 -15 -9.5 45 36 0.29 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.5 110 Units /W /W Data and specifications subject to change without notice 200211041 AP9575H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -60 -1 - Typ. -0.06 Max. Units 90 120 -3 -1 -25 100 27 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-12A VGS=-4.5V, ID=-9A 14 17 5 6 10 19 46 53 160 100 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-9A VDS=-60V, VGS=0V VDS=-48V, VGS=0V VGS= 25V ID=-9A VDS=-48V VGS=-4.5V VDS=-30V ID=-9A RG=3.3,VGS=-10V RD=3.3 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1660 2660 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-9A, VGS=0V IS=-9A, VGS=0V, dI/dt=-100A/s Min. - Typ. 60 159 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP9575H/J 55 40 50 T C =25 C 45 o -ID , Drain Current (A) 40 35 -ID , Drain Current (A) -10V -6.0V -5.0V -4.5V 35 TC=150 C o 30 -10V -6.0V -5.0V -4.5V 25 30 20 25 20 15 15 V G =-3.0V 10 5 10 V G =-3.0V 5 0 0 0 2 4 6 8 10 0 2 4 6 8 10 12 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 105 2.0 100 I D = -9 A T C =25 Normalized R DS(ON) 1.8 I D =- 12 A V G =-10V 1.6 RDS(ON) (m ) 1.4 95 1.2 90 1.0 0.8 85 0.6 80 0.4 3 5 7 9 11 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 15.0 12.5 2.0 10.0 7.5 -VGS(th) (V) -IS(A) 1.5 T j =150 o C 5.0 T j =25 o C 1.0 2.5 0.0 0.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9575H/J f=1.0MHz 12 10000 -VGS , Gate to Source Voltage (V) 10 I D = -9A V DS = -48V C iss 8 1000 6 C (pF) C oss 100 4 C rss 2 0 0 10 20 30 40 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 -ID (A) 10 100us Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 0.1 1ms 1 0.1 0.05 T C =25 o C Single Pulse 0.1 0.1 1 10 10ms 100ms DC PDM 0.02 t T Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 Single Pulse 0.01 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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