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APT32GU30B
300V
POWER MOS 7 IGBT
TO-247
(R)
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
(R)
G
C
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
* SSOA rated
E
C G E
All Ratings: TC = 25C unless otherwise specified.
APT32GU30B UNIT
300 20 30 55 32 120 120A @ 300V 250 -55 to 150 300
Watts C Amps Volts
Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current
1
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
300 3 4.5 1.5 1.5 250
A nA
10-2003 050-7463 Rev -
6 2.0
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C)
2 2
I CES I GES
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
2500 100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT32GU30B
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 150V I C = 15A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 300V Inductive Switching (25C) VCC = 200V VGE = 15V I C = 15A
4 5
MIN
TYP
MAX
UNIT
1660 170 13 7.0 57 11 17 120 28 13 127 63 TBD 36 66 28 13 155 119 TBD 76 111
MIN TYP MAX UNIT C/W gm ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area
td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RJC RJC WT
Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
4 5 6
R G = 20 TJ = +25C
J
Inductive Switching (125C) VCC = 200V VGE = 15V I C = 15A R G = 20 TJ = +125C
Turn-on Switching Energy (Diode) Turn-off Switching Energy
6
J
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight
0.50 N/A 5.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7463
Rev -
10-2003
TYPICAL PERFORMANCE CURVES
60
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
APT32GU30B
60 50
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
50 TC=25C 40 30 TC=125C 20 TC=-55C
TC=-55C 40 TC=25C 30 TC=125C 20
10 0 0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(VGE = 15V) 100 250s PULSE TEST TJ = -55C <0.5 % DUTY CYCLE
10 0
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (VGE = 10V) 16
VGE, GATE-TO-EMITTER VOLTAGE (V)
14 12
IC = 15A TJ = 25C
IC, COLLECTOR CURRENT (A)
80
VCE = 60V VCE = 150V 10 8 6 4 2 0 0 10 20 30 40 50 GATE CHARGE (nC) FIGURE 4, Gate Charge 60 70 VCE = 240V
60
40 TJ = 25C 20 TJ = 125C 0 0 1 2 3 4 5 6 7 8 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 6 7 8 9 10 11 12 13 14 15 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2 0 5 IC= 30A IC= 15A IC= 7.5A
2 IC = 30A 1.6 IC = 15A
1.2
IC = 7.5A
0.8
0.4
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 80
0 -50
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 -50
70 60 50 40
10-2003 050-7463 Rev -
30 20 10 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
APT32GU30B
30
td(ON), TURN-ON DELAY TIME (ns)
160 VGE= 15V
td (OFF), TURN-OFF DELAY TIME (ns)
25 20
140 120
VGE =15V,TJ=125C
VGE =15V,TJ=25C
100 80 60 40 20 0 VCE = 200V RG = 20 L = 100 H
15 10 VCE = 200V TJ = 25C, TJ =125C RG = 20 L = 100 H 5
5 0
10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 25
RG =20, L = 100H, VCE = 200V
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 140 120
20
tr, RISE TIME (ns) tf, FALL TIME (ns)
100 80 60 40 20
TJ = 125C, VGE = 10V or 15V
15
10
TJ = 25 or 125C,VGE = 15V
TJ = 25C, VGE = 10V or 15V
5
RG =20, L = 100H, VCE = 200V
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 200
EON2, TURN ON ENERGY LOSS (J)
VCE = 200V L = 100 H RG = 20
0
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 300
EOFF, TURN OFF ENERGY LOSS (J)
TJ = 125C, VGE = 10V or 15V
0
150
TJ =125C, VGE=15V
250 200 150 100 50
TJ = 25C, VGE = 10V or 15V
VCE = 200V L = 100 H RG = 20
100
50
TJ = 25C, VGE=15V
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 400
SWITCHING ENERGY LOSSES (J)
VCE = 200V VGE = +15V TJ = 125C
0
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 300
SWITCHING ENERGY LOSSES (J)
VCE = 200V VGE = +15V RG = 20
0
Eoff 30A
Eoff 30A
250 200
300
200
Eon2 30A
150 Eon2 30A 100 50 Eon2 15A 0 Eoff 7.5A Eon2 7.5A 0 Eoff 15A
10-2003
100
Eoff 15A Eoff 7.5A
Eon2 15A
Rev -
Eon2 7.5A 0 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 5
050-7463
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
3,000 Cies 120 1,000
C, CAPACITANCE ( F) IC, COLLECTOR CURRENT (A)
APT32GU30B
140
500 Coes 100 50
100 80 60 40 20 0
P
Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 10
0 50 100 150 200 250 300 350 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area
0.60
ZJC, THERMAL IMPEDANCE (C/W)
0.50 0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0.1 0.05 10-5 10-4 SINGLE PULSE Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
0
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
400
FMAX, OPERATING FREQUENCY (kHz)
RC MODEL Junction temp. ( C) 0.216 Power (watts) 0.284 Case temperature 0.161F 0.00600F
100
Fmax = min(f max1 , f max 2 )
50
f max1 =
TJ = 125C TC = 75C D = 50 % VCE = 200V RG = 5
0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
f max 2 = Pdiss =
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
10 20 30 40 50 60 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
TJ - TC R JC
0
050-7463
Rev -
10-2003
APT32GU30B
APT15DS30
10%
Gate Voltage
TJ = 125 C
td(on) tr
Collector Current
V CC
IC
V CE
90%
5% 10%
5%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST
90% Gate Voltage
TJ = 125 C
*DRIVER SAME TYPE AS D.U.T.
td(off)
Collector Current
tf
90%
A V CE IC 100uH
Collector Voltage Switching Energy
10% 0
A DRIVER*
V CLAMP
B
D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
T0-247 Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
10-2003
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Gate Collector Emitter
Rev -
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
050-7463
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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