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APT47N60BC3 APT47N60SC3
600V 47A 0.070
D3PAK
Super Junction MOSFET
TO-247
C OLMOS O
Power Semiconductors
* Ultra low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated * TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL
dv/ dt
D G S
All Ratings: TC = 25C unless otherwise specified.
APT47N60BC3_SC3 UNIT Volts Amps
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
600 47 141 20 30 417 3.33 -55 to 150 260 50 20 1
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125C) Repetitive Avalanche Current Repetitive Avalanche Energy
7 7
Volts Watts W/C C V/ns Amps mJ
IAR EAR EAS
Single Pulse Avalanche Energy
1800
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
600 0.06 0.5 0.07 25 250 100 2.10 3 3.9
(VGS = 10V, ID = 30A)
Ohms A nA Volts
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TJ = 150C) Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.7mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG"
TM
050-7144 Rev E
4-2004
DYNAMIC CHARACTERISTICS
Symbol C iss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT47N60BC3_SC3
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 47A @ 25C RESISTIVE SWITCHING VGS = 13V VDD = 380V ID = 47A @ 125C RG = 1.8 6 INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 47A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 400V VGS = 15V ID = 47A, RG = 5
MIN
TYP
MAX
UNIT
7015 2565 210 260 29 110 18 27 110 8 670 980 1100 1200
MIN TYP MAX UNIT Amps Volts ns C nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr
rr dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
47 141 1.2 580 23 6
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = -47A)
Reverse Recovery Time (IS = -47A, dl S/dt = 100A/s, VR = 350V) Reverse Recovery Charge (IS = -47A, dl S /dt = 100A/s, VR = 350V) Peak Diode Recovery
dv/ dt 5
Q
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W
0.30 62
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 36.0mH, RG = 25, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID47A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f
0.30 0.25
0.9
0.7 0.20 0.15 0.10 0.05 0 0.5 0.3 SINGLE PULSE 0.1 0.05 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 1.0 Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
4-2004
050-7144 Rev E
Z
JC
Typical Performance Curves
RC MODEL Junction temp. (C) 0.0136 0.00308
180 160
ID, DRAIN CURRENT (AMPERES)
APT47N60BC3_SC3
VGS =15 & 10V 6.5V
140 120 100 80 60 40 20 0 4.5V 4V 5.5V 5V 6V
0.0289 Power (watts) 0.0988
0.00145
0.00948
0.158 Case temperature (C)
0.231
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
120
ID, DRAIN CURRENT (AMPERES)
1.40
V
GS
NORMALIZED TO = 10V @ 23.5A
100 80 60 40 20 0
1.30 1.20 1.10 1.00 VGS=20V 0.90 0.80
TJ = -55C TJ = +25C TJ = +125C
VGS=10V
0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
50
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
20 30 40 50 60 70 80 90 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
10
ID, DRAIN CURRENT (AMPERES)
40
1.10
30
1.05
20
1.00
10
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
0 25
0.90
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
3 2.5 2.0 1.5 1.0 0.5 0 -50
I V
D
= 47A = 10V
GS
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7144 Rev E
4-2004
Typical Performance Curves
188 100 50
OPERATION HERE LIMITED BY RDS (ON)
30,000 10,000
C, CAPACITANCE (pF)
APT47N60BC3_SC3
Ciss
ID, DRAIN CURRENT (AMPERES)
1,000
Coss
10 5 TC =+25C TJ =+150C SINGLE PULSE
100S
100 Crss
1mS 10mS 10
1
1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
= 47A
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 TJ =+150C TJ =+25C 10
12 VDS= 120V 8 VDS= 300V VDS= 480V 4
100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 350 300 250 200 150 100 50 0 td(off)
V = 400V
0 0
50
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 120 100 80
V
DD G
1
= 400V
R
= 5
T = 125C
J
L = 100H
DD G
tf
td(on) and td(off) (ns)
R
= 5
T = 125C
J
tr and tf (ns)
L = 100H
60 40 20 tr
td(on) 0 40 50 60 70 80 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10
20
30
40 50 60 70 80 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 4500
V I
DD
0
0
10
20
30
2500
= 400V R = 5
= 400V
Eoff
SWITCHING ENERGY (J)
4000 3500 3000 2500 2000 1500 1000 500
D J
= 47A
Eoff
2000
SWITCHING ENERGY (J)
T = 125C
J
T = 125C L = 100H E ON includes diode reverse recovery.
L = 100H E ON includes diode reverse recovery.
1500
1000
4-2004
Eon
500
Eon
050-7144 Rev E
40 50 60 70 80 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
10
20
30
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
Typical Performance Curves
APT47N60BC3_SC3
10% td(on)
Gate Voltage
TJ = 125 C
90%
Gate Voltage
TJ = 125 C
td(off)
tf
90%
tr 90% 5%
Switching Energy
Collector Current
Collector Current
10%
5%
Collector Voltage
Collector Voltage Switching Energy
0 10%
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7144 Rev E
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
4-2004
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)

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