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APTM50DHM38G
Asymmetrical - bridge MOSFET Power Module
VBUS Q1 CR3 G1 OUT2 S1 OUT1 CR2 Q4
VDSS = 500V RDSon = 38m typ @ Tj = 25C ID = 90A @ Tc = 25C
Application * * * Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
G4
0/VBUS
S4
* * *
OUT1 G1 S1 VBUS 0/VBUS
Benefits * * * * * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant
S4 G4 OUT2
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM50DHM38G - Rev 3
July, 2006
Tc = 25C
Max ratings 500 90 67 360 30 45 694 46 50 2500
Unit V A V m W A
APTM50DHM38G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V
Typ
Tj = 25C
T j = 125C
VGS = 10V, ID = 45A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V
38 3
Max 200 1000 45 5 150
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 90A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 90A R G = 2 Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 90A, R G = 2 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 90A, R G = 2
Min
Typ 11.2 2.4 0.18 246 66 130 18 35 87 77 1510 1452 2482 1692
Max
Unit nF
nC
ns
J
J
Diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Test Conditions VR=600V IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V di/dt = 200A/s Tj = 25C Tj = 125C Tc = 80C
Min 600
Typ
Max 250 500
Unit V A A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
100 1.6 1.9 1.4 180 220 390 1450
1.8 V
Qrr
Reverse Recovery Charge
nC
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APTM50DHM38G - Rev 3
July, 2006
trr
Reverse Recovery Time
ns
APTM50DHM38G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.18 0.6 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3-6
APTM50DHM38G - Rev 3
July, 2006
APTM50DHM38G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 Thermal Impedance (C/W) 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.9 0.7 0.5 0.3
0.1 0.02 0.05 0 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
Low Voltage Output Characteristics 350 I D, Drain Current (A) I D, Drain Current (A) 300 250 200 150 100 50 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current I D, DC Drain Current (A)
Normalized to VGS=10V @ 45A VGS=10V VGS=10&15V 8V 7.5V 7V 6.5V 6V 5.5V
Transfert Characteristics 250 200 150 100
TJ=25C VDS > ID(on)xR DS(on)MAX 250s pulse test @ < 0.5 duty cycle
50
T J=125C
0 25 0
TJ=-55C
1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V)
8
RDS(on) Drain to Source ON Resistance
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0
DC Drain Current vs Case Temperature 100 80 60 40 20 0
V GS=20V
50
100
150
200
25
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4-6
APTM50DHM38G - Rev 3
July, 2006
ID, Drain Current (A)
50 75 100 125 TC, Case Temperature (C)
150
APTM50DHM38G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS (TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000
Ciss
2.5 2.0 1.5 1.0 0.5 0.0
ON resistance vs Temperature
VGS =10V ID=45A
-50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
1000
100s
limited by R DSon
100
limited by RDSon
10
Single pulse TJ =150C TC=25C 1
1ms 10ms
1 10 100 1000 VDS, Drain to Source Voltage (V)
VGS , Gate to Source Voltage (V)
C, Capacitance (pF)
10000
Coss
Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=90A 12 T =25C J V =250V
DS
10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC)
July, 2006
VDS=400V
1000
Crss
100
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
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5-6
APTM50DHM38G - Rev 3
APTM50DHM38G
Delay Times vs Current 100
td(off)
Rise and Fall times vs Current
120 100
VDS=333V RG=2 T J=125C L=100H
t d(on) and td(off) (ns)
80 60 40 20 0 20 40 60 80 100 120 ID, Drain Current (A) 140
V DS =333V RG =2 T J=125C L=100H td(on)
tf
tr and t f (ns)
80 60 40 20 0 20
tr
40
60
80
100
120
140
I D, Drain Current (A) Switching Energy vs Gate Resistance
Switching Energy vs Current
5
Switching Energy (mJ)
8
Switching Energy (mJ)
4 3 2 1 0 20
VDS=333V RG=2 T J=125C L=100H
Eon
7 6 5 4 3 2 1 0 0
VDS=333V ID=90A TJ=125C L=100H
Eoff
Eoff
Eon Eoff 5 10 15 20 25
40
60
80
100
120
140
I D, Drain Current (A) Operating Frequency vs Drain Current
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
350
Frequency (kHz)
ZVS
300 250 200 150 100 50 0 20 30 40 50 60
Hard switching
V DS=333V D=50% R G=2 T J=125C T C=75C
IDR, Reverse Drain Current (A)
400
1000
T J=150C
100
ZCS
10
TJ=25C
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
July, 2006
70
80
ID, Drain Current (A)
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM50DHM38G - Rev 3
Microsemi reserves the right to change, without notice, the specifications and information contained herein

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