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MITSUBISHI IGBT MODULES
CM400DU-34KA
HIGH POWER SWITCHING USE
CM400DU-34KA
G IC ................................................................... 400A G VCES.......................................................... 1700V G Insulated
Type G 2-elements in a pack
APPLICATION General purpose inverters & Servo controlers, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
140 130 110 0.25 36 43.8 10 13.8 11.5
10
(15)
9
G2
20.4
E2
(26)
(26)
(26)
Tc measured point
110 0.25
C2E1
14.5
E1
3-M8 NUTS
65
4-M4 NUTS
G1
14.5
130
20
40
E2
C1
(15)
Tc measured point
4-6.5MOUNTING
HOLES
24.5 -0.5
35 -0.5
+1
+1
C2E1
E2
C1
CIRCUIT DIAGRAM
G1 E1
8
E2 G2
Sep. 2001
MITSUBISHI IGBT MODULES
CM400DU-34KA
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25C)
Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Conditions Ratings 1700 20 400 800 400 800 1950 -40 ~ +150 -40 ~ +125 3500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 Unit V V A A A A W C C V N*m g
(Note 2) (Note 2)
Main terminal to base plate, AC 1 min. Main Terminal M8 Mounting holes M6 G(E) Terminal M4 Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25C)
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Test conditions VCE = VCES, VGE = 0V IC = 40mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 400A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 1000V, IC = 400A, VGE = 15V VCC = 1000V, IC = 400A VGE1 = VGE2 = 15V RG = 1.0, Inductive load switching operation IE = 400A IE = 400A, VGE = 0V, Tj = 25C IE = 400A, VGE = 0V, Tj = 125C IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied*2 (1/2 module) Tc measured point is just under the chips Min. -- 4 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ. -- 5.5 -- 3.2 3.8 -- -- -- 1800 -- -- -- -- -- 18.9 -- 2.2 -- -- 0.010 -- Max. 1 7 0.5 4.1 -- 57 9.6 3 -- 1000 300 1000 800 600 -- 4.6 -- 0.064 0.11 -- 0.025 Unit mA V A V nF nF nF nC ns ns ns ns ns C V V C/W C/W C/W C/W
VEC(Note 1) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q Thermal resistance*1 Contact thermal resistance Thermal resistance*3
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : If you use this value, Rth(f-a) should be measured just under the chips.
Sep. 2001
MITSUBISHI IGBT MODULES
CM400DU-34KA
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 800 Tj = 25C
COLLECTOR CURRENT IC (A)
TRANSFER CHARACTERISTICS (TYPICAL) 11
COLLECTOR CURRENT (A)
12
800 VCE = 10V Tj = 25C Tj = 125C
VGE = 20V 600 15 14 400 9 200 8 0 10
600
400
200
0
2
4
6
8
10
0
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 Tj = 25C
6 VGE = 15V Tj = 25C 5 Tj = 125C 4 3 2 1 0
8
6 IC = 800A 4 IC = 400A IC = 160A
2
0
100 200 300 400 500 600 700 800 COLLECTOR CURRENT IC (A)
0
6
8
10
12
14
16
18
20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103
EMITTER CURRENT IE (A)
7 5 3 2
CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102
CAPACITANCE Cies, Coes, Cres (nF)
7 5 3 2
Tj = 25C
Cies
101
7 5 3 2
102
7 5 3 2
Coes Cres
100
7 5 3 2
101
1
2
3
4
5
VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V)
Sep. 2001
EMITTER-COLLECTOR VOLTAGE VEC (V)
MITSUBISHI IGBT MODULES
CM400DU-34KA
HIGH POWER SWITCHING USE
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104
7 5 3 2
REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A)
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103
7 5 3 2
SWITCHING TIMES (ns)
103
7 5 3 2
tf td(off) td(on)
trr 102
7 5 3 2
Irr Conditions: VCC = 1000V VGE = 15V RG = 1.0 Tj = 25C Inductive load
2 3 5 7 102 2 3 5 7 103
102
7 5 3 2
tr
101 1 10
Conditions: VCC = 1000V VGE = 15V RG = 1.0 Tj = 125C Inductive load
5 7 102 2 3 5 7 103
2
3
101 1 10
COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part)
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (C/W)
EMITTER CURRENT (A)
GATE-EMITTER VOLTAGE VGE (V)
10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j-c) = 0.064C/W 3 FWDi part: 2 Per unit base = Rth(j-c) = 0.11C/W 100
7 5 3 2 7 5 3 2 7 5 3 2 3 2
GATE CHARGE CHARACTERISTICS (TYPICAL) 20 IC = 400A 16
VCC = 800V VCC = 1000V
12
10-1
10-1
7 5 3 2 7 5 3 2
8
10-2
10-2 Single Pulse TC = 25C
4
10-3
10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TMIE (s)
0
0
500
1000
1500
2000
2500
GATE CHARGE QG (nC)
Sep. 2001

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