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| DSEP 30-06A DSEP 30-06BR DSEP 30-06B HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 30 A VRRM = 600 V trr = 30/35 ns A C VRSM V 600 600 600 VRRM V 600 600 600 Type TO-247 AD Version A ISOPLUS 247TM Version BR DSEP 30-06A DSEP 30-06B DSEP 30-06BR C A C (TAB) C A Isolated back surface A = Anode, C = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md* FC VISOL ** Weight Conditions rect., d = 0.5; TC (Vers. A) = 135C TC (Vers. B) = 125C; TC (Vers. BR) = 115C TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 1.3 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 30 250 0.2 0.1 -55...+175 175 -55...+150 A A A mJ A C C C W W Nm N V~ g Features * * * * * * * * International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Version ..R isolated and UL registered E153432 Applications * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders Advantages * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch TC = 25C (Vers. BR) mounting torque mounting force with clip 50/60 Hz, RMS, t = 1 minute, leads-to-tab typical 165 135 0.8...1.2 20...120 2500 6 * Verson A only; ** Version BR only Symbol IR Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 30 A; TVJ = 150C TVJ = 25C Characteristic max. Values Vers. A Vers. B 250 1 1.25 1.60 0.9 250 2 1.56 2.51 0.9 1.1 0.25 30 4 A mA V V K/W K/W K/W ns VF RthJC RthJC RthCH trr IRM typ. typ. Version BR typ. IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 50 A; -diF/dt = 100 A/s TVJ = 100C 0.25 35 6 Dimensions see Outlines.pdf A Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, test conditions and dimensions. 417 (c) 2004 IXYS All rights reserved 1-3 DSEP 30-06A 70 A 60 IF 50 TVJ=150C 3000 T = 100C nC VVJ= 300V R 2500 50 A IRM 40 TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A Qr 2000 1500 1000 IF= 60A IF= 30A IF= 15A 40 TVJ=100C 30 30 20 TVJ=25C 20 10 0 0.0 500 0 100 10 0 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt 0.5 1.0 1.5 VF V2.0 Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 130 ns 120 TVJ= 100C VR = 300V Fig. 3 Peak reverse current IRM versus -diF/dt 20 V VFR tfr 15 VFR 2.0 1.2 s tfr 0.9 1.5 Kf 1.0 IRM trr 110 100 90 IF= 60A IF= 30A IF= 15A 10 0.6 0.5 Qr 5 80 70 0 40 80 120 C 160 TVJ 0 200 400 600 -diF/dt 800 A/s 1000 0 0 200 400 TVJ= 100C IF = 30A 0.3 0.0 0.0 600 A/s 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.465 0.179 0.256 ti (s) 0.0052 0.0003 0.0396 0.1 ZthJC 0.01 0.001 0.00001 DSEP30-06A DSEC60-06A NOTE: Fig. 2 to Fig. 6 shows typical values 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions. 417 (c) 2004 IXYS All rights reserved 2-3 DSEP 30-06BR DSEP 30-06B 100 A 80 IF 60 TVJ = 100C 40 100 20 TVJ = 25C 0 0 1 2 3V VF 4 50 0 100 4 2 0 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt 150 TVJ = 150C Qr 200 300 nC 250 12 A 10 IRM 8 6 TVJ = 100C VR = 300 V IF = 60 A IF = 30 A IF = 15 A TVJ = 100C VR = 300 V IF = 60 A IF = 30 A IF = 15 A Fig. 1 Forward current IF versus VF 2.0 Fig. 2 Reverse recovery charge Qr versus -diF/dt 140 ns 120 TVJ = 100C VR = 300 V Fig. 3 Peak reverse current IRM versus -diF/dt 60 V 50 VFR 40 30 20 TVJ = 100C IF = 30 A 0.30 s 0.25 tfr 0.20 0.15 0.10 0.05 0.00 600 A/s 1000 800 diF/dt 1.5 Kf 1.0 IRM trr 100 IF = 60 A IF = 30 A 80 IF = 15 A 0.5 Qr 60 10 40 0 0 40 80 120 C 160 TVJ 0 200 400 600 -diF/dt 800 A/s 1000 0 VFR tfr 0.0 200 400 Fig. 4 Dynamic parameters Qr, IRM versus TVJ 10 K/W Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation ..B: DSEP 30-06BR i 1 2 3 Rthi (K/W) 0.465 0.179 0.256 ti (s) 0.0052 0.0003 0.0397 1 DSEP 30-06B ZthJC 0.1 Constants for ZthJC calculation ..BR: i Rthi (K/W) 0.368 0.1417 0.0295 0.5604 ti (s) 0.0052 0.0003 0.0004 0.0092 0.01 0.001 0.00001 1 2 3 4 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions. NOTE: Fig. 2 to Fig. 6 shows typical values 417 (c) 2004 IXYS All rights reserved 3-3 |
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