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| HUM2001/HUM2020 SERIES Pin Diode High Power Stud DESCRIPTION KEY FEATURES High Power Stud Mount Package. High Zero Bias Impedance Very Low Inductance and Capacitance. No Internal Lead Straps. Small Mechanical Outline. APPLICATIONS/BENEFITS MRI Applications. High Power Antenna Switching. VOLTAGE RATING [25C] Reverse Voltage (VR) - Volts IR = 10A 100V Part type WWW . Microsemi .C OM With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical. Its advantages also include the low forward bias resistance and high zero bias impedance that are essential for low loss, high isolation and wide bandwidth performance. Hermetically sealed, SOGO passivated PIN chips with full-faced metallurgical bonds on both sides to achieve high reliability and high surge capability. IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com HUM2001 HUM2005 HUM2010 HUM2015 HUM2020 Style "D" Insulated Stud Style "C" Stud Style "B" Round Axial Leads Style "SM" Melf 500V 1000V 1500V 2000V Maximum Ratings @ 25C (UNLESS OTHERWISE SPECIFIED) Parameter Maximum Reverse Voltage Average Power Dissipation @ Stud =50C Non-Repetitive Sinusoidal Surge Current (8.3 ms) Storage Temperature Range Operating Temperature Range Thermal resistance Junction-to Case "C" Stud only Symbol TRWM IO I TSTG TSTG RJC HUM2001 100 13 100 -65 to +175 -55 to +150 7.5 HUM2005 500 13 100 -65 to +175 -55 to +150 7.5 HUM2010 1000 13 100 -65 to +175 -55 to +150 7.5 TYPE HUM2015 1500 13 100 -65 to +175 -55 to +150 7.5 HUM2020 2000 13 100 -65 to +175 -55 to +150 7.5 Unit V W A C HUM2010-2020 C C/W Copyright 2000 MSCXXXX.PDF 2002-08-08 Microsemi Page 1 HUM2001/HUM2020 SERIES Pin Diode High Power Stud PRODUCT PREVIEW/PRELIMINARY Parameter Diode Resistance Capacitance CT Reverse Current Carrier Lifetime Parallel Resistance Forward Voltage ELECTRICAL PARAMETERS @ 25C (unless otherwise specified) Symbol Conditions Min Typ. RS CT IR RP Vf F= 4 MHz, If = 0.5 A F= 1 MHz, 100 V VR @ Rated Voltage If = 10 mA/ 100 V F= 10 MHz, 100 V If = 0.5 A 0.10 3.4 10 200 30 0.85 WWW . Microsemi .C OM Max 0.20 4.0 10 Units pF A s k V 1.0 HUM2010, 15, 20 TYPICAL 101 16 HUM2010, 15, 20 TYPICAL 12 Rs @ 4 MHz (Ohms) Ct @ 1 MHz (pF) 100 8 10-1 4 10-2 100 101 102 103 0 -1 10 10 0 10 1 10 2 If (mA) Vr (V) HUM2010, 15, 20 TYPICAL 10 1 HUM2010, 15, 20 TYPICAL 10 6 1 MHz 10 0 105 4 If (A) 10 10 -1 Rp (KOhms) 10 3 10 -2 102 101 100 MHz ELECTRICALS ELECTRICALS 10 -3 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Vf (V) 10 0 0 10 20 30 40 50 60 70 80 90 100 Vr (V) Copyright 2000 MSCXXXX.PDF 2002-08-08 Microsemi Page 2 HUM2001/HUM2020 SERIES Pin Diode High Power Stud PRODUCT PREVIEW/PRELIMINARY STYLE "C" STUD WWW . Microsemi .C OM STYLE "D" INSULATED STUD PACKAGE DATA PACKAGE DATA Copyright 2000 MSCXXXX.PDF 2002-08-08 Microsemi Page 3 HUM2001/HUM2020 SERIES Pin Diode High Power Stud PRODUCT PREVIEW/PRELIMINARY STYLE "SM" MELF WWW . Microsemi .C OM STYLE "B" ROUND AXIAL LEADS PACKAGE DATA Note: Add Style Letter to Suffix of Part Number to Define Device Configuration, Example: (i.e. HUM2001 C) Copyright 2000 MSCXXXX.PDF 2002-08-08 Microsemi Page 4 HUM2001/HUM2020 SERIES Pin Diode High Power Stud PRODUCT PREVIEW/PRELIMINARY WWW . Microsemi .C OM NOTES NOTES Copyright 2000 MSCXXXX.PDF 2002-08-08 Microsemi Page 5 |
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