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PD - 95510A
IRFR3518PbF IRFU3518PBF
Applications l High frequency DC-DC converters l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
HEXFET(R) Power MOSFET
VDSS
80V
RDS(on) max
29mW
ID
30A
D-Pak IRFR3518
I-Pak IRFU3518
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
80 20 38 27 150 110 0.71 5.2 -55 to + 175 300 (1.6mm from case )
Units
V
A W W/C V/ns C
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient
Typ.
--- --- ---
Max.
1.4 40 110
Units
C/W
Notes through are on page 10
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1
12/03/04
IRFR/U3518PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 80 --- --- 2.0 --- --- --- --- Typ. --- 0.09 24 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 29 m VGS = 10V, ID = 18A 4.0 V VDS = VGS, ID = 250A 20 VDS = 80V, VGS = 0V A 250 VDS = 64V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 34 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 37 11 12 12 25 37 13 1710 270 33 1780 170 330 Max. Units Conditions --- S VDS = 25V, ID = 18A 56 ID = 18A --- nC VDS = 40V --- VGS = 10V --- VDD = 40V --- ID = 18A ns --- RG = 9.1 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 64V, = 1.0MHz --- VGS = 0V, VDS = 0V to 64V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
160 18 11
Units
mJ A mJ
Diode Characteristics
IS
ISM
VSD trr Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 38 --- --- showing the A G integral reverse --- --- 150 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 18A, VGS = 0V --- 77 --- ns TJ = 25C, IF = 18A --- 210 --- nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFR/U3518PbF
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
1000
TOP
100
I D, Drain-to-Source Current (A)
BOTTOM
100
I D, Drain-to-Source Current (A)
BOTTOM
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
10
10
4.5V
1
4.5V
0.1
1
20s PULSE WIDTH T J= 25 C
0.01 0.1 1 10 100
20s PULSE WIDTH T J= 175 C
0.1 0.1 1 10 100
V DS Drain-to-Source Voltage (V) ,
V DS Drain-to-Source Voltage (V) ,
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
3.0
I D = 38A
ID, Drain-to-Source Current ()
2.5
100.00
RDS(on) , Drain-to-Source On Resistance
T J = 25C T J = 175C
2.0
(Normalized)
1.5
10.00
1.0
VDS = 25V 20s PULSE WIDTH
1.00 4.0 6.0 8.0 10.0 12.0 14.0 16.0
0.5
V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
Tj, Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFR/U3518PbF
100000 VGS = 0V, f = 1 MHZ Ciss = C + C , C SHORTED gs gd ds Crss = C gd Coss = C + C ds gd
12
VGS, Gate-to-Source Voltage (V)
ID= 18A VDS= 40V VDS= 64V VDS= 16V
10 8 6 4 2 0
10000
C, Capacitance(pF)
C iss
1000
C oss
100
C rss
10 1 10 100
0
10
20
30
40
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100
TJ = 175 C
10
ID, Drain-to-Source Current (A)
100
I SD , Reverse Drain Current (A)
10
100sec 1msec
T J= 25 C
1
1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10 10msec
V GS = 0 V
0.1 0.0 0.5 1.0 1.5 2.0
V SD ,Source-to-Drain Voltage (V)
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFR/U3518PbF
40
V DS
LIMITED BY PACKAGE
RD
VGS
30
RG VGS
D.U.T.
+
-VDD
I D , Drain Current (A)
20
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
10
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
(Z thJC )
1 D = 0.50
Thermal Response
0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 t1/ t
2
P DM
J = P DM x Z thJC
+T C 1
0.1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U3518PbF
15V
320
TOP
RG
20V
D.U.T
IAS tp
+ V - DD
A
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
240
BOTTOM
ID 7.3A 13A 18A
160
0.01
Fig 12a. Unclamped Inductive Test Circuit
80
V(BR)DSS tp
0 25 50 75 100 125 150 175
Starting Tj, Junction Temperature
( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
12V .2F
50K .3F
QGS VG
QGD
D.U.T. VGS
3mA
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFR/U3518PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRFR/U3518PbF
D-Pak (TO-252AA) Package Outline
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120 WIT H AS S EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE ASS EMBLY LINE "A" Note: "P" in ass embly line pos ition indicates "Lead-Free" PART NUMBER INT ERNATIONAL RECT IFIER LOGO
IRFU120 12 916A 34
AS SEMBLY LOT CODE
DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A
OR
PART NUMBER INT ERNATIONAL RECT IFIER LOGO
IRFU120 12 34
DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S IT E CODE
AS SEMBLY LOT CODE
8
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IRFR/U3518PbF
I-Pak (TO-251AA) Package Outline
(Dimensions are shown in millimeters (inches) )
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 AS SEMBLED ON WW 19, 1999 IN T HE ASS EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO
IRFU120 919A 56 78
AS SEMBLY LOT CODE
DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A
OR
INTERNATIONAL RECTIFIER LOGO PART NUMBER
IRFU120 56 78
AS S EMBLY LOT CODE
DATE CODE P = DES IGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 19 A = AS S EMBLY S ITE CODE
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IRFR/U3518PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. Starting TJ = 25C, L = 0.99mH R G = 25, IAS = 18A. ISD 18A, di/dt 360A/s, VDD V(BR)DSS, TJ 175C. Pulse width 300s; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994. charging time as Coss while VDS is rising from 0 to 80% VDSS.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04
10
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