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| SEMICONDUCTOR TECHNICAL DATA TV Tuning. FEATURES Low Series Resistance : rs=1.1 (Max.) Small Package : ESC. KDV310E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK High Capacitance Ratio : C2V/C25V=17.0(Min.) C 1 E 2 D F MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 34 150 -55 150 UNIT V 1. ANODE 2. CATHODE B A DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC Marking Type Name VD ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Current SYMBOL IR1 IR2 C2V C25V C2V/C25V rS VR=32V VR=32V, Ta=60 VR=2V, f=1MHz VR=25V, f=1MHz VR=5V, f=470MHz TEST CONDITION MIN. 47.0 2.65 17.0 TYP. MAX. 10 100 53.0 3.0 1.1 UNIT nA Capacitance Capacitance Ratio Series Resistance pF Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) C(Min.) (VR=2~25V) 0.02 2004. 4. 20 Revision No : 0 1/2 KDV310E I R - VR 10 REVERSE CURRENT I R (A) -10 C T - VR 80 TOTAL CAPACITANCE CT (pF) f=1MHz 10 -11 60 40 10 -12 20 10 -13 0 10 20 30 40 0 1 10 REVERSE VOLTAGE VR (V) 50 REVERSE VOLTAGE VR (V) r s - VR 1.0 SERIES RESISTANCE rs () f=470MHz (LOG CT ) / (LOG VR ) - VR 0 (LOG CT) / (LOG VR) 0.8 -1.0 0.6 -2.0 0.4 0.2 1 3 5 10 30 REVERSE VOLTAGE VR (V) -3.0 1 10 REVERSE VOLTAGE VR (V) 50 2004. 4. 20 Revision No : 0 2/2 |
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