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| NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P2103HVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS 30 RDS(ON) 21m ID 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) 1 SYMBOL VDS VGS LIMITS 30 20 7 6 40 2 1.3 -55 to 150 275 UNITS V V TC = 25 C TC = 70 C TC = 25 C TC = 70 C ID IDM PD Tj, Tstg TL A W C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RJA TYPICAL MAXIMUM 62.5 UNITS C / W Pulse width limited by maximum junction temperature. Duty cycle 1% ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 55 C 30 1 1.5 3 V LIMITS UNIT MIN TYP MAX 100 nA 1 10 A 1 Jun-29-2004 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P2103HVG SOP-8 Lead-Free On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 ID(ON) RDS(ON) gfs VDS = 5V, VGS = 10V VGS = 4.5V, ID = 6A VGS = 10V, ID = 7A VDS = 15V, ID = 5A DYNAMIC 25 21 15 24 35 21 A m S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 Ciss Coss Crss Qg Qgs Qgd 2 1650 VGS = 0V, VDS = 15V, f = 1MHz 365 170 18 VDS = 0.5V(BR)DSS, VGS = 5V, ID = 7A 5.5 6.7 11 VDS = 15V ID 1A, VGS = 10V, RGEN = 6 9 25 11 20 18 40 20 nS 25 nC pF Gate-Source Charge2 Gate-Drain Charge Rise Time2 Turn-Off Delay Time Fall Time2 2 2 Turn-On Delay Time td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current Pulsed Current 3 IS ISM VSD trr Qrr IF = 1A, VGS = 0V IF = 5A, dlF/dt = 100A / S 15.5 7.9 1.3 2.5 1.2 A V nS Forward Voltage1 Reverse Recovery Time Reverse Recovery Charge 1 2 Pulse test : Pulse Width 300 sec, Duty Cycle 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH "P2103HVG", DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 2 Jun-29-2004 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P2103HVG SOP-8 Lead-Free TYPICAL PERFORMANCE CHARACTERISTICS 3 Jun-29-2004 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P2103HVG SOP-8 Lead-Free 4 Jun-29-2004 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P2103HVG SOP-8 Lead-Free SOIC-8(D) MECHANICAL DATA mm Min. 4.8 3.8 5.8 0.38 Typ. 4.9 3.9 6.0 0.445 1.27 1.35 0.1 1.55 0.175 Dimension A B C D E F G Max. 5.0 4.0 6.2 0.51 Dimension H I J K L mm Min. 0.5 0.18 Typ. 0.715 0.254 0.22 0 4 8 Max. 0.83 0.25 1.75 0.25 M N J F D E G I H K B C A 5 Jun-29-2004 |
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