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| 1150MP 150 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1150MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55FW-1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature ELECTRICAL CHARACTERISTICS @ 25C SYMBOL POUT PIN PG c VSWR CHARACTERISTICS Power Out Power Input Power Gain Efficiency Load Mismatch Tolerance TEST CONDITIONS F= 1025-1150 MHz Vcc = 50 Volts PW = 10 sec, DF = 1% F = 1090 MHz MIN 140 7.0 35 TYP 150 30 7.5 38 10:1 MAX UNITS W W dB % 250 Watts Peak 60 Volts 4.0 Volts 6.0 Amps Peak - 65 to +150 oC + 200 oC FUNCTIONAL CHARACTERISTICS @ 25C BVebo Emitter to Base Breakdown Ie = 1 mA BVces Collector to Emitter Breakdown Ic = 10mA Hfe DC Current Gain Vce = 5V, Ic = 500 mA Cob Output Capacitance Vcb = 50 V, f = 1 MHz Thermal Resistance Tc=25C jc2 Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Initial Issue June, 1994 3.5 65 15 V V 120 16 0.6 pF C/W o Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. 1150MP Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. |
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