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Bulletin I27128 Rev.C 07/03
19MT050XF
"FULL-BRIDGE" FREDFET MTP
Features
Low On-Resistance High Performance Optimised Built-in Fast Recovery Diodes Fully Characterized Capacitance and Avalanche Voltage and Current Aluminum Nitride DBC Very Low Stray Inductance Design for High Speed Operation
HEXFET(R) Power MOSFET
31 A
VDSS = 500V
Benefits
Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Low Trr and Soft Diode Reverse Recovery Optimized for Welding, UPS and SMPS Applications Outstanding ZVS and High Frequency Operation Direct Mounting to Heatsink PCB Solderable Terminals Very Low Junction-to-Case Thermal Resistance UL Approved E78996
MMTP
Absolute Maximum Ratings Parameters
ID IDM PD VGS VISOL dv/dt Continuos Drain Current @ VGS = 10V Pulsed Drain Current Maximum Power Dissipation Gate-to-Source Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Peak Diode Recovery dv/dt (3) (1) @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 100C
Max
31 19 124 1140 456 30 2500 15
Units
A
W V V/ ns
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1
19MT050XF
Bulletin I27128 Rev.C 07/03
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameters
V(BR)DSS V(BR)DSS/ T J R DS(ON) V GS(th) I DSS I GSS Drain-to-Source Breakdown Voltage Temperature Coeff. of Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current (6) Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min Typ Max Units Test Conditions
500 0.48 0.19 0.21 3.0 0.22 0.25 6.0 50 2 150 - 150 V V GS = 0V, I D = 250A V/C I D = 4mA, reference to T J = 25C V A mA nA V GS = 10V, I D = 19A V GS = 10V, I D = 31A V DS = V GS , I D = 250A V DS = V DS = V GS = V GS = 500V, V GS = 0V 400V, V GS = 0V, T J = 125C 30V - 30V (4)
Dynamic Characteristics @ TJ = 25C (unless otherwise specified)
Parameters
gfs Qg Qgs Qgd td(on) td(off) tr tf Ciss Coss Crss Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-on Delay Time Turn-off Delay Time Rise Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min Typ Max Units Test Conditions
26 105 36 46 49 80 165 76 4808 1165 40 160 55 70 74 120 250 115 7210 1750 60 S nC V DS = 50V, ID = 19A I D = 31A VDS = 400V VGS = 10V I D = 31A VDS = 250V VGS = 10V RG = 4.3 VGS = 0V VDS = 25V f = 1.0 MHz
(4)
ns
pF
Diode Characteristics @ TJ = 25C (unless otherwise specified)
Parameters
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (1) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1.01 252 1619
Min Typ Max Units Test Conditions
31 124 1.1 378 2428 V ns nC A MOSFET symbol showing the integral reverse
D
G S
p-n junction diode TJ = 25C, IS = 31A, VGS = 0V TJ = 125C, IF = 31A di/dt = 100A/s
(4) (4)
2
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19MT050XF
Bulletin I27128 Rev.C 07/03
Avalanche Characteristics
Parameters
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy (2) (1) (1)
Min
Typ
Max
493 31 114
Units
mJ A mJ
Thermal- Mechanical Specifications
Parameters
TJ TSTG R thJC R thCS Operating Junction Temperature Range Storage Temperature Range Junction-to-Case (per MOSFET) Case-to-Sink
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Min
- 40 - 40
Typ
Max
150 125 0.44
Units
C C/ W
0.06 (external shortest distance in air (shortest distance along external 5.5 8 66
(3) ISD 31A, di/dt 340 A/s, VDD V(BR)DSS, TJ 150C (4) Pulse width 400s; duty cycle 2% (5) Standard version only i.e. without optional thermistor (6) ICES includes also opposite leg overall leakage
Clearance Creepage Weight
(5)
mm
between two terminals)
(5)
surface of the insulating material between 2 terminals)
g
Notes: (1) Repetitive rating; pulse width limited by max. junction temperature (2) Starting TJ = 25C, L = 1.0mH, RG = 25 IAS = 31A
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3
19MT050XF
Bulletin I27128 Rev.C 07/03
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
100
10
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
10
1
1
5.0V
5.0V
0.1
20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100
0.1 0.1 1
20s PULSE WIDTH Tj = 150C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
R DS(on) , Drain-to-Source On Resistance
ID = 31A VGS = 10V
2.0
ID, Drain-to-Source Current ( A)
100
10
T J = 150C
(Normalized)
1.5
1
T J = 25C VDS = 50V 20s PULSE WIDTH
4.0 5.0 6.0 7.0 8.0 9.0
1.0
0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
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19MT050XF
Bulletin I27128 Rev.C 07/03
100000
10000
Coss = Cds + Cgd
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd
16
ID= 31A VDS= 400V VDS= 250V VDS= 100V
12
C, Capacitance (pF)
Ciss
1000
8
Coss
100
4
FOR TEST CIRCUIT SEE FIGURE 13
Crss
10 1 10 100 1000
0 0 40 80 120 160
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000.0
1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100
100.0 T J = 150C 10.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
100sec
1msec 1 Tc = 25C Tj = 150C Single Pulse 1 10 100 10msec
1.0 T J = 25C 0.1 0.2 0.4 0.6 0.8 1.0 VGS = 0V
0.1
1.2 1.4 VSD, Source-toDrain Voltage (V)
1000
10000
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
19MT050XF
Bulletin I27128 Rev.C 07/03
32
VDS
RD
28
VGS
24
ID, Drain Current (A)
RG
D.U.T.
+
- VDD
20
10V
16 12
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
8
VDS
4 0 25 50 75 100 125 150
90%
TC, Case Temperature Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC (C/W) Thermal Response Z thJC )
D = 0.50
0.1
0.20 0.10 0.05
0.01
0.02 0.01
J
R1 R1 J 1 2
R2 R2
R3 R3 3 C 3
Ri (C/W) 0.1272 0.2697 0.0429
i (sec) 0.00109 0.03739 3.749
1
2
0.001
Ci= i/Ri Ci= i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
0.0001 1E-006 1E-005 0.0001 0.001 0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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19MT050XF
Bulletin I27128 Rev.C 07/03
1000
EAS, Single Pulse Avalanche Energy (mJ)
800
ID 14A 19A BOTTOM 31A
TOP
L
15V
600
VDS
DRIVER
400
RG
20V
D.U.T
IAS
+ V - DD
A
200
tp
0.01
0 25 50 75 100 125 150
Fig 12b. Unclamped Inductive Test Circuit and vs Junction Temperature
Starting T J , Junction Temperature (C)
tp V(BR)DSS
Fig 12a. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12c. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
+ V - DS
VGS
D.U.T. VGS
3mA
QGS VG
QGD
IG
ID
Current Sampling Resistors
Charge
Fig 13a. Gate Charge Test Circuit
Fig 13b. Basic Gate Charge Waveform
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19MT050XF
Bulletin I27128 Rev.C 07/03
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
D.U.T
+
-
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V *
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET(R) Power MOSFETs
8
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19MT050XF
Bulletin I27128 Rev.C 07/03
Outline Table
Dimensions in millimeters
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9
19MT050XF
Bulletin I27128 Rev.C 07/03
Ordering Information Table
Device Code
19
1
MT 050
2 3
X
4
F
5
1 2 3 4 5
-
Current rating Essential Part Number Voltage code Speed/ Type
(19 = 19A) (050 = 500V) (X = HexFet)
Circuit Configuration (F = Full Bridge)
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 09/02
10
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