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| 1N4454 Discrete POWER & Signal Technologies 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current TA = 25C unless otherwise noted Parameter Value 50 200 400 600 1.0 4.0 -65 to +200 175 Units V mA mA mA A A C C Tstg TJ Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max 1N4454 500 3.33 300 Units mW mW/C C/W (c)1997 Fairchild Semiconductor Corporation 1N4454 High Conductance Ultra Fast Diode (continued) Electrical Characteristics Symbol BV IR VF TA = 25C unless otherwise noted Parameter Breakdown Voltage Reverse Current Forward Voltage Test Conditions I R = 5.0 A VR = 50 V VR = 50 V, TA = 150C I F = 250 A I F = 1.0 mA I F = 2.0 mA I F = 10 mA VR = 0, f = 1.0 MHz I F = 10 mA, VR = 1.0 V, I rr = 1.0 mA, RL = 100 Min 75 Max 100 100 575 650 710 1.0 4.0 4.0 Units V nA A mV mV mV V pF nS 505 550 610 CO TRR Diode Capacitance Reverse Recovery Time |
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