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AO4429 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4429 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4429 is Pb-free (meets ROHS & Sony 259 specifications). AO4429L is a Green Product ordering option. AO4429 and AO4429L are electrically identical.
Features
VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON) < 7.7m (VGS = -10V) Max RDS(ON) < 12m (VGS = -4.5V) ESD Rating: 4KV HBM
SOIC-8 Top View S S S G D D D D
D
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -30 20 -15 -12.8 -80 3.1 2 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 26 50 14
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4429
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, I D=-15A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, I D=-10A Forward Transconductance VDS=-5V, ID=-15A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C -1.4 -80 6.4 8.1 9 50 -0.71 -1 -5 5355 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 970 620 2.8 91 VGS=-10V, VDS=-15V, I D=-15A 46 16 21 15 VGS=-10V, VDS=-15V, RL=1, RGEN=3 IF=-15A, dI/dt=100A/s IF=-15A, dI/dt=100A/s 15 82.5 34 38 38 50 4 120 60 6400 12 7.7 -1.8 Min -30 -1 -10 1 -2.7 Typ Max Units V A A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qg(4.5V) Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4429
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 -10V 50 40 -ID (A) 30 20 10 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 10 Normalized On-Resistance 1.6 ID=-15A 1.4 VGS=-10V VGS=-3V -4.5V -4V -ID(A) -3.5V 60 50 40 30 20 125C 10 25C 0 1 1.5 2 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics VDS=-5V
8 RDS(ON) (m)
VGS=-4.5V
6 VGS=-10V 4
1.2 VGS=-4.5V 1
2 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
20 16 RDS(ON) (m) 12 8 4 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C ID=-15A
1.0E+01 1.0E+00 1.0E-01 -IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 125C VGS=0V
125C
25C
Alpha & Omega Semiconductor, Ltd.
AO4429
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8000 VDS=-15V ID=-15A Capacitance (pF) 7000 6000 5000 4000 3000 2000 1000 0 0 20 40 60 80 100 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 0 0 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss Ciss
8 -VGS (Volts)
6
4
Coss
2
RDS(ON) limited
100s 1ms
10s
100 80 Power (W) 60 40 20 0 0.001
TJ(Max)=150C TA=25C
-ID (Amps)
10.0
10ms 0.1s 1s TJ(Max)=150C TA=25C 10s DC
1.0
0.1 0.1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1 10 100
0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
0.01
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD Ton Single Pulse 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 100 1000
T
0.01 0.00001
Alpha & Omega Semiconductor, Ltd.

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