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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS678 High-speed diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 10 Philips Semiconductors Product specification High-speed diode FEATURES * Small plastic SMD package * High switching speed: max. 6 ns * Continuous reverse voltage: max. 80 V * Repetitive peak reverse voltage: max. 100 V * Repetitive peak forward current: max. 600 mA. APPLICATIONS * High-speed switching in hybrid thick and thin-film circuits. 3 Marking code: L52. BAS678 DESCRIPTION The BAS678 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT23 package. PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode handbook, halfpage 2 1 2 n.c. 3 MAM185 1 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 100 s t = 10 ms Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 - - - - -65 - 9 3 1.7 250 +150 150 A A A mW C C see Fig.2; note 1 CONDITIONS MIN. - - - - MAX. 100 80 250 600 V V mA mA UNIT 1996 Sep 10 2 Philips Semiconductors Product specification High-speed diode ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.5 VR = 10 V VR = 75 V VR = 75 V; Tj = 150 C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 400 mA to IR = 400 mA; RL = 100 ; measured at IR = 40 mA; see Fig.7 when switched from IF = 10 mA; tr = 20 ns; see Fig.8 - - - - - 15 100 50 2 6 CONDITIONS see 3; IF = 200 mA; d.c.; note 1 MIN. - BAS678 MAX. 1.0 V UNIT nA nA A pF ns Vfr Note forward recovery voltage - 2 V 1. Tamb = 25 C; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 330 500 UNIT K/W K/W 1996 Sep 10 3 Philips Semiconductors Product specification High-speed diode GRAPHICAL DATA BAS678 handbook, halfpage 300 MBG441 handbook, halfpage 300 MBH279 IF (mA) 200 IF (mA) 200 100 100 0 0 100 Tamb (oC) 200 0 0 1 VF (V) 2 Device mounted on an FR4 printed-circuit board. Tj = 25 C. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage; typical values. 102 handbook, full pagewidth IFSM (A) MBG703 10 1 10-1 1 10 102 103 tp (s) 104 Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 10 4 Philips Semiconductors Product specification High-speed diode BAS678 102 handbook, halfpage IR (A) 10 MBH281 handbook, halfpage 2.0 MBH284 Cd (pF) 1.5 1 (1) (2) 1.0 10-1 0.5 10-2 0 100 Tj (oC) 200 0 0 10 20 VR (V) 30 (1) VR = 75 V; maximum values. (2) VR = 75 V; typical values. f = 1 MHz; Tj = 25 C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 10 5 Philips Semiconductors Product specification High-speed diode BAS678 handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90% tp t RS = 50 V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) IR = 40 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 k 450 I 90% V R = 50 S D.U.T. OSCILLOSCOPE R i = 50 10% MGA882 V fr t tr tp t input signal output signal Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 10 6 Philips Semiconductors Product specification High-speed diode PACKAGE OUTLINE BAS678 handbook, full pagewidth 3.0 2.8 0.150 0.090 1.9 0.95 2 0.1 max 10 o max 3 1.1 max 30 o max 0.48 0.38 TOP VIEW 0.1 M A B 1 B A 0.2 M A 0.55 0.45 10 o max 1.4 1.2 2.5 max MBC846 Dimensions in mm. Fig.9 SOT23. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Sep 10 7 |
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