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| PD - 95397 HEXFET(R) Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching l Lead-Free Description l l S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 6 5 IRF7509PBF D1 D1 D2 D2 N-Ch P-Ch VDSS 30V -30V P-CHANNEL MOSFET Top View RDS(on) 0.11 0.20 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Micro8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C I DM PD @TA = 25C PD @TA = 70C VGS VGSM dv/dt TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS Continuous Drain Current, VGS Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10S Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldering Temperature, for 10 seconds N-Channel 30 2.7 2.1 21 Max. P-Channel -30 -2.0 -1.6 -16 Units V A W W mW/C V V V/ns C 1.25 0.8 10 20 30 5.0 -55 to + 150 240 (1.6mm from case) Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 100 Units C/W www.irf.com 1 6/15/04 IRF7509PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 30 -30 1.0 -1.0 1.9 0.92 Typ. Max. 0.059 -0.039 0.09 0.110 0.14 0.175 0.17 0.20 0.30 0.40 1.0 -1.0 25 -25 100 7.8 12 7.5 11 1.2 1.8 1.3 1.9 2.5 3.8 2.5 3.7 4.7 9.7 10 12 12 19 5.3 9.3 210 180 80 87 32 42 Units V V/C V S A Conditions V GS = 0V, I D = 250A V GS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA V GS = 10V, I D = 1.7A V GS = 4.5V, ID = 0.85A V GS = -10V, I D =-1.2A V GS = -4.5V, I D =-0.6A V DS = VGS, I D = 250A V DS = VGS, I D = -250A V DS = 10V, I D = 0.85A V DS = -10V, I D = -0.6A V DS = 24 V, V GS = 0V V DS = -24V, V GS = 0V V DS = 24 V, VGS = 0V, TJ = 125C V DS = -24V, V GS = 0V, TJ = 125C V GS = 20V N-Channel I D = 1.7A, VDS = 24V, VGS = 10V P-Channel I D = -1.2A, VDS = -24V, VGS = -10V N-Channel VDD = 15V, I D = 1.7A, RG = 6.1, RD = 8.7 P-Channel VDD = -15V, ID = -1.2A, RG = 6.2, RD = 12 N-Channel VGS = 0V, VDS = 25V, = 1.0MHz P-Channel VGS = 0V, VDS = -25V, = 1.0MHz V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(ON) VGS(th) g fs I DSS I GSS Qg Q gs Qgd td(on) tr t d(off) tf C iss C oss C rss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance nC ns pF Source-Drain Ratings and Characteristics Parameter IS I SM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions 1.25 -1.25 A 21 -16 1.2 TJ = 25C, IS = 1.7A, V GS = 0V V -1.2 TJ = 25C, IS = -1.8A, VGS = 0V 40 60 N-Channel ns 30 45 TJ = 25C, IF = 1.7A, di/dt = 100A/s 48 72 P-Channel nC TJ = 25C, I F = -1.2A, di/dt = -100A/s 37 55 Repetitive rating; pulse width limited by Notes: max. junction temperature. ( See fig. 21 ) Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. N-Channel ISD 1.7A, di/dt 120A/s, VDD V(BR)DSS, TJ 150C P-Channel ISD -1.2A, di/dt 160A/s, VDD V(BR)DSS, TJ 150C 2 www.irf.com N - Channel 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP IRF7509PBF 100 I D , Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 10 10 1 1 3.0V 3.0V 0.1 0.1 1 20s PULSE WIDTH TJ = 25C A 10 0.1 0.1 1 20s PULSE WIDTH TJ = 150C A 10 V DS , Drain-to-Source Voltage (V) V DS Drain-to-Source Voltage (V) , Fig 1. Typical Output Characteristics 100 Fig 2. Typical Output Characteristics 100 I D , Drain-to-Source Current (A) 10 TJ = 25C TJ = 150C ISD , Reverse Drain Current (A) 10 TJ = 150C TJ = 25C 1 1 0.1 3.0 3.5 4.0 4.5 V DS = 10V 20s PULSE WIDTH 5.0 5.5 6.0 A 0.1 0.4 0.8 1.2 1.6 VGS = 0V A 2.0 VGS , Gate-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage 0.220 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 1.7A 1.5 R DS (on), Drain-to-Source On Resistance 0.180 VGS = 4.5V 0.140 1.0 0.5 0.100 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 80 VGS = 10V 100 120 140 160 A 0.060 0 2 4 6 8 10 TJ , Junction Temperature (C) I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature www.irf.com Fig 6. Typical On-Resistance Vs. Drain Current 3 IRF7509PBF 0.140 N - Channel 100 R DS (on) , Drain-to-Source On Resistance OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 0.120 10 10us ID = 2.7A 0.100 100us 1 1ms 0.080 0.060 0 4 8 12 16 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 10ms VGS , Gate-to-Source Voltage (V) 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 400 Fig 8. Maximum Safe Operating Area C, Capacitance (pF) 300 Ciss Coss 200 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 I D = 1.7A V DS = 24V V DS = 15V 16 12 8 100 Crss 4 0 1 10 100 A 0 0 2 4 6 FOR TEST CIRCUIT SEE FIGURE 9 8 10 12 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 4 www.irf.com P - Channel 10 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP IRF7509PBF 10 -ID , Drain-to-Source Current (A) 1 -ID , Drain-to-Source Current (A) VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP 1 -3.0V -3.0V 0.1 0.1 1 20s PULSE WIDTH TJ = 25C A 10 0.1 0.1 1 20s PULSE WIDTH TJ = 150C A 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 11. Typical Output Characteristics 10 Fig 12. Typical Output Characteristics 10 -ID , Drain-to-Source Current (A) TJ = 25C TJ = 150C -ISD , Reverse Drain Current (A) TJ = 150C TJ = 25C 1 1 0.1 3.0 4.0 5.0 VDS = -10V 20s PULSE WIDTH 6.0 7.0 A 0.1 0.4 0.6 0.8 1.0 VGS = 0V 1.2 A 1.4 -VGS , Gate-to-Source Voltage (V) -VSD , Source-to-Drain Voltage (V) Fig 13. Typical Transfer Characteristics 2.0 Fig 14. Typical Source-Drain Diode Forward Voltage RDS(on) , Drain-to-Source On Resistance ( ) 1.5 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = -1.2A 1.5 1.0 VGS = -4.5V 1.0 0.5 0.5 0.0 -60 -40 -20 0 20 40 60 80 VGS = -10V VGS = -10V 0.0 0 1 -I 100 120 140 160 A 2 3 4 A TJ , Junction Temperature (C) , , Drain Current (A) Fig 15. Normalized On-Resistance Vs. Temperature www.irf.com Fig 16. Typical On-Resistance Vs. Drain Current 5 IRF7509PBF RDS(on) , Drain-to-Source On Resistance ( ) 0.60 P - Channel 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 0.50 -ID , Drain Current (A) I 10 10us 0.40 I = -2.0A 100us 0.30 1 1ms 0.20 0.10 3 -V 6 9 12 15 A 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 /5 , Gate-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 17. Typical On-Resistance Vs. Gate Voltage 400 Fig 18. Maximum Safe Operating Area 20 -V GS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd I D = -1.2A VDS = -24V VDS = -15V 16 C, Capacitance (pF) 300 Ciss Coss 200 12 8 100 Crss 4 0 1 10 100 A 0 0 2 4 6 FOR TEST CIRCUIT SEE FIGURE 9 8 10 12 A -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 19. Typical Capacitance Vs. Drain-to-Source Voltage N-P - Channel 1000 Fig 20. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.com IRF7509PBF Micro8 Package Outline Dimensions are shown in milimeters (inches) LEAD ASSIGNMENTS D -B3 DDDD 8765 H 0.25 (.010) 1234 SSSG e 6X e1 A -CB 8X 0.08 (.003) M A1 C AS BS 0.10 (.004) L 8X C 8X 3.20 ( .126 ) 4.24 5.28 ( .167 ) ( .208 ) RECOMMENDED FOOTPRINT 1.04 ( .041 ) 8X 0.38 8X ( .015 ) S1 G1 S2 G2 M A M SINGLE 1234 D1 D1 D2 D2 8765 DUAL 1234 DIM INCHES MIN MAX MILLIMETERS MIN MAX A A1 B C D e e1 E H L .036 .004 .010 .005 .116 .044 .008 .014 .007 .120 0.91 0.10 0.25 0.13 2.95 1.11 0.20 0.36 0.18 3.05 3 8765 E -A- .0256 BASIC .0128 BASIC .116 .188 .016 0 .120 .198 .026 6 0.65 BASIC 0.33 BASIC 2.95 4.78 0.41 0 3.05 5.03 0.66 6 NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH. 0.65 6X ( .0256 ) Micro8 Part Marking Information EXAMPLE: THIS IS AN IRF7501 LOT CODE (XX) DATE CODE (YW) - See table below Y = YEAR W = WEEK P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL) PART NUMBER WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D WW = (27-52) IF PRECEDED BY A LETT ER YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 24 25 26 X Y Z 50 51 52 X Y Z www.irf.com 7 IRF7509PBF Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/04 8 www.irf.com |
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