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| PD - 90711B POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number IRFMG50 IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY (R) RDS(on) 2.0 ID 5.6A HEXFET(R) MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. TO-254AA Features: n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 5.6 3.5 22 150 1.2 20 860 5.6 15 1.0 -55 to 150 300(0.063in./1.6mm from case for 10 sec) 9.3 (Typical) Units A W W/C V mJ A mJ V/ns o C g www.irf.com 1 4/17/01 IRFMG50 Electrical Characteristics Parameter @ Tj = 25C (Unless Otherwise Specified) Min Typ Max Units -- 1.4 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 2.0 4.0 -- 25 250 100 -100 200 20 -- 30 44 210 60 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 10V, ID = 3.5A BVDSS Drain-to-Source Breakdown Voltage 1000 BV DSS/T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage 2.0 gfs Forward Transconductance 5.2 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- -- nA nC VDS = VGS, ID = 250A VDS > 15V, IDS = 3.5A VDS= 800V ,VGS=0V VDS = 800V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =10V, ID =5.6A VDS = 400V VDD = 400V, ID = 5.6A, RG = 2.35 ns nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) Ciss C oss C rss CDC Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain-to-Case Capacitance -- -- -- -- 2400 240 80 12 -- -- -- -- pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- 5.6 22 1.8 1200 8.4 Test Conditions A V nS C Tj = 25C, IS = 5.6A, VGS = 0V Tj = 25C, IF = 5.6A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-sink Junction-to-Ambient Min Typ Max Units -- -- -- -- 0.83 0.21 -- -- 48 C/W Test Conditions Typical socket mount For footnotes refer to the last page 2 www.irf.com IRFMG50 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFMG50 3 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFMG50 V DS VGS RG RD D.U.T. + -V DD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFMG50 15V VDS L D R IV E R RG 20V 1 D .U .T . IA S tp + - VD D A 0 .01 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V 0 .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFMG50 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 50V, starting TJ = 25C, L= 54mH Peak IL = 5.6A, VGS = 10V ISD 5.6A, di/dt 120A/s, VDD 1000V, TJ 150C Pulse width 300 s; Duty Cycle 2% Case Outline and Dimensions -- TO-254AA .1 2 ( .0 0 5 ) 3 .7 8 ( .14 9 ) 3 .5 3 ( .13 9 ) -A 1 3.8 4 ( .5 4 5 ) 1 3.5 9 ( .5 3 5 ) 6 .6 0 ( .2 60 ) 6 .3 2 ( .2 49 ) -B 1 .2 7 ( .0 50 ) 1 .0 2 ( .0 40 ) 17 .4 0 ( .68 5 ) 16 .8 9 ( .66 5 ) 3 1 .4 0 ( 1 .2 3 5 ) 3 0 .3 9 ( 1 .1 9 9 ) 20 .3 2 ( .8 00 ) 20 .0 7 ( .7 90 ) 1 3.84 ( .5 4 5 ) 1 3.59 ( .5 3 5 ) LE G E N D 1 - COLL 2 - E M IT 3 - G A TE 1 2 3 -C - 3X 3.81 ( .1 5 0 ) 2X NO TE S : 1.1 4 ( .0 45 ) 0.8 9 ( .0 35 ) .50 ( .0 2 0 ) .25 ( .0 1 0 ) M C AM B MC 3.81 ( .1 5 0 ) LEGEND 1- DRAIN 2- SOURCE 3- GATE IRHM57163SED IRHM57163SEU CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/01 www.irf.com 7 |
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