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| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr V DSS IXFK 73 N 30 IXFN 73 N 30 ID25 RDS(on) 45 m 45 m 300 V 73 A 300 V 73 A trr 200 ns TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 300 0.9/6 10 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 W TC = 25C Maximum Ratings IXFK IXFN 300 300 20 30 73 292 40 30 5 500 300 300 20 30 73 292 40 30 5 520 150 -55 ... +150 2500 3000 V V V V A A A mJ V/ns W C C C C V~ V~ G = Gate S = Source S D G D (TAB) S miniBLOC, SOT-227 B (IXFN) E153432 S G -55 ... +150 D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Features l International standard packages l JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification l miniBLOC with Aluminium nitride isolation l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance l Fast intrinsic Rectifier Applications l DC-DC converters l Synchronous rectification l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l Temperature and lighting controls l Low voltage relays Advantages l Easy to mount l Space savings l High power density 92805J (11/01) Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 300 2 4 200 TJ = 25C TJ = 125C 400 2 45 V V nA uA mA m VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 1 mA V DS = VGS, ID = 8 mA V GS = 20 VDC, VDS = 0 V DS = 0.8 VDSS V GS = 0 V V GS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2001 IXYS All rights reserved IXFK 73N30 IXFN 73N30 TO-264 AA Outline Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 50 9000 V GS = 0 V, VDS = 25 V, f = 1 MHz 1500 580 30 V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1 (External), 80 100 50 360 V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 60 180 TO-264 AA TO-264 AA miniBLOC, SOT-227 B miniBLOC, SOT-227 B 0.05 0.15 0.24 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W K/W Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthJC RthCK V DS = 10 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions V GS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 73 292 1.5 A A V miniBLOC, SOT-227 B Repetitive; pulse width limited by TJM IF = 100 A, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V 2 40 200 ns C A M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFK 73N30 IXFN 73N30 Fig. 1 Output Characteristics 160 140 120 TJ = 25C VGS = 10V 8V 7V Fig. 2 Input Admittance 160 140 120 TJ = 25C ID - Amperes ID - Amperes 14 100 6V 100 80 60 40 20 0 80 60 40 20 0 5V 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts VGS - Volts Fig. 3 RDS(on) vs. Drain Current 2.0 TJ = 25C Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 2.25 1.8 RDS(on) - Normalized RDS(on) - Normalized 2.00 1.75 ID = 40A 1.6 VGS = 10V 1.4 VGS = 15V 1.50 1.25 1.00 0.75 1.2 1.0 0.8 0 40 80 120 160 200 240 0.50 -50 -25 0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 80 70 60 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 1.1 VGS(th) BVDSS BV/VG(th) - Normalized -25 0 25 50 75 100 125 150 ID - Amperes 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 50 40 30 20 10 0 -50 TC - Degrees C (c) 2001 IXYS All rights reserved TJ - Degrees C IXFK 73N30 IXFN 73N30 Fig.7 Gate Charge Characteristic Curve 10 VDS = 150V Fig.8 Capacitance Curves 10000 9000 8000 Ciss 8 ID = 42A Capacitance - pF IG = 10mA 7000 6000 5000 4000 3000 2000 1000 0 Coss f = 1MHz VDS = 25V VGE - Volts 6 4 2 0 0 50 100 150 200 250 300 350 400 Crss 0 5 10 15 20 25 Gate Charge - nCoulombs VDS - Volts 160 140 120 Fig.9 Source Current vs. Source to Drain Voltage ID - Amperes 100 80 60 40 TJ = 25C TJ = 125C 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD - Volts Fig.10 Transient Thermal Impedance Thermal Response - K/W 0.1 0.01 0.001 0.01 0.1 1 Time - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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